AGILENT MSA-0686-TR1

Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0686
Features
Description
• Cascadable 50 Ω Gain Block
The MSA-0686 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost,
surface mount plastic package.
This MMIC is designed for use as a
general purpose 50 Ω gain block.
Applications include narrow and
broad band IF and RF amplifiers
in commercial and industrial
applications.
• Low Operating Voltage:
3.5 V Typical Vd
• 3 dB Bandwidth:
DC to 0.8 GHz
• High Gain:
18.5␣ dB Typical at 0.5 GHz
• Low Noise Figure:
3.0 dB Typical at 0.5 GHz
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Available[1]
Note:
1. Refer to PACKAGING section “Tapeand-Reel Packaging for Surface
Mount Semiconductors”.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Biasing Configuration
R bias
VCC > 5 V
RFC (Optional)
4
C block
C block
3
IN
1
2
5965-9588E
OUT
MSA
Vd = 3.5 V
6-382
86 Plastic Package
MSA-0686 Absolute Maximum Ratings
Absolute Maximum[1]
50 mA
200 mW
+13 dBm
150°C
–65 to 150°C
Parameter
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Thermal Resistance[2,4]:
θjc = 120°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 8.3 mW/°C for TC > 126°C.
4. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Symbol
GP
Parameters and Test Conditions: Id = 16 mA, ZO = 50 Ω
Power Gain (|S21| 2)
f = 0.1 GHz
Units
dB
f = 0.5 GHz
∆GP
Gain Flatness
f3 dB
3 dB Bandwidth
VSWR
f = 0.1 to 0.5 GHz
Min.
Typ.
20.0
16.5
18.5
dB
± 0.7
GHz
0.8
Input VSWR
f = 0.1 to 1.5 GHz
1.7:1
Output VSWR
f = 0.1 to 1.5 GHz
1.7:1
NF
50 Ω Noise Figure
f = 0.5 GHz
dB
3.0
P1 dB
Output Power at 1 dB Gain Compression
f = 0.5 GHz
dBm
2.0
IP3
Third Order Intercept Point
f = 0.5 GHz
dBm
14.5
tD
Group Delay
f = 0.5 GHz
psec
225
Vd
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
V
mV/°C
Max.
2.8
3.5
4.2
–8.0
Notes:
1. The recommended operating current range for this device is 12 to 20 mA. Typical performance as a function of current
is on the following page.
Part Number Ordering Information
Part Number
MSA-0686-TR1
MSA-0686-BLK
No. of Devices
1000
100
Container
7" Reel
Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-383
MSA-0686 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 16 mA)
S11
S21
S12
S22
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
0.1
0.2
0.3
0.4
0.5
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
.06
.06
.07
.08
.08
.09
.12
.15
.25
.34
.43
.49
.56
.61
.70
–175
–169
–164
–158
–154
–152
–152
–154
–171
171
155
140
128
118
99
20.1
19.8
19.4
19.1
18.7
18.0
17.2
16.3
14.0
11.9
9.8
8.0
6.4
5.0
2.4
10.08
9.77
9.35
8.98
8.58
7.94
7.25
6.51
5.01
3.94
3.09
2.51
2.09
1.78
1.32
170
161
152
144
135
128
114
102
76
56
42
28
15
3
–18
–23.3
–23.2
–22.5
–22.2
–21.6
–21.1
–20.3
–19.5
–17.6
–16.1
–15.9
–15.3
–15.1
–14.9
–14.7
.069
.069
.075
.078
.083
.088
.097
.106
.133
.157
.161
.171
.175
.180
.185
4
8
13
16
18
21
25
25
22
19
16
11
6
3
–2
.04
.07
.10
.13
.15
.18
.21
.24
.27
.27
.27
.26
.25
.24
.24
–84
–103
–113
–123
–131
–140
–155
–168
165
147
134
124
118
115
118
1.05
1.05
1.03
1.02
1.01
1.01
1.00
0.99
0.99
1.01
1.06
1.10
1.13
1.15
1.16
Note:
1. A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25°C
(unless otherwise noted)
24
25
21
TC = +85°C
TC = +25°C
20 TC = –25°C
Gp (dB)
18
20
19
18
GP
15
12
5
10
I d = 12 mA
P1 dB (dBm)
9
15
I d = 16 mA
6
I d = 25 mA
3
5
Gain Flat to DC
0
0
0.1
0.3 0.5
1.0
3.0
6.0
1
2
3
4
5
Vd (V)
FREQUENCY (GHz)
4.0
I d = 30 mA
3.5
I d = 20 mA
4
NF (dB)
P1 dB (dBm)
8
I d = 16 mA
3.0
2.5
0
I d = 12 mA
I d = 16 mA, 30 mA
I d = 20 mA
I d = 12 mA
–4
0.1
2.0
0.2 0.3
0.5
1.0
2.0
4.0
4
3
P1 dB
3
2
2
1
1
0.1
0.2 0.3
0.5
1.0
2.0
4.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 5. Noise Figure vs. Frequency.
6-384
0
–25
0
+25
+55
+85
TEMPERATURE (°C)
Figure 2. Device Current vs. Voltage.
12
4
0
0
Figure 1. Typical Power Gain vs.
Frequency, TA = 25°C.
5
NF
Figure 3. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
Id=16mA.
NF (dB)
Id (mA)
G p (dB)
17
86 Plastic Package Dimensions
0.51 ± 0.13
(0.020 ± 0.005)
GROUND
RF INPUT
1
A06
RF OUTPUT
AND DC BIAS
45°
GROUND
1.52 ± 0.25
(0.060 ± 0.010)
4
C
L
3
2.34 ± 0.38
(0.092 ± 0.015)
2
2.67 ± 0.38
(0.105 ± 0.15)
5° TYP.
0.66 ± 0.013
(0.026 ± 0.005)
0.203 ± 0.051
(0.006 ± 0.002)
8° MAX
0° MIN
2.16 ± 0.13
(0.085 ± 0.005)
0.30 MIN
(0.012 MIN)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
6-385