AUSTIN MT5C1008C

SRAM
MT5C1008
Austin Semiconductor, Inc.
128K x 8 SRAM
PIN ASSIGNMENT
(Top View)
WITH DUAL CHIP ENABLE
32-Pin DIP (C, CW)
32-Pin CSOJ (SOJ)
AVAILABLE AS MILITARY
SPECIFICATIONS
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
DQ3
VSS
•SMD 5962-89598
•MIL-STD-883
FEATURES
•
•
•
•
•
•
High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns
Battery Backup: 2V data retention
Low power standby
High-performance, low-power CMOS process
Single +5V (+10%) Power Supply
Easy memory expansion with CE1\, CE2, and OE\
options.
• All inputs and outputs are TTL compatible
-12 (contact factory)
-15
-20
-25
-35
-45
-55*
-70*
• Package(s)•
Ceramic DIP (400 mil)
Ceramic DIP (600 mil)
Ceramic LCC
Ceramic LCC
Ceramic Flatpack
Ceramic SOJ
Ceramic SOJ
C
CW
EC
ECA
F
DCJ
SOJ
• 2V data retention/low power
L
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
DQ3
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
VCC
A15
CE2
WE\
A13
A8
A9
A11
OE\
A10
CE\
DQ8
DQ7
DQ6
DQ5
DQ4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
32-Pin LCC (ECA)
A12
A14
A10
6
NC
VCC
A15
CE2
4 3 2 1 32 31 30
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
DQ3
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
A15
CE2
WE\
A13
A8
A9
A11
OE\
A10
CE\
DQ8
DQ7
DQ6
DQ5
DQ4
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
WE \
A13
A8
A9
A11
OE \
A10
CE1\
DQ8
14 15 16 17 18 19 20
GENERAL DESCRIPTION
The MT5C1008 SRAM employs high-speed, low power
CMOS designs using a four-transistor memory cell, and are
fabricated using double-layer metal, double-layer polysilicon
technology.
For design flexibility in high-speed memory
applications, this device offers dual chip enables (CE1\, CE2)
and output enable (OE\). These control pins can place the
outputs in High-Z for additional flexibility in system design.
All devices operate from a single +5V power supply and all
inputs and outputs are fully TTL compatible.
Writing to these devices is accomplished when write
enable (WE\) and CE1\ inputs are both LOW and CE2 is HIGH.
Reading is accomplished when WE\ and CE2 remain HIGH and
CE1\ and OE\ go LOW. The devices offer a reduced power
standby mode when disabled, allowing system designs to
achieve low standby power requirements.
The “L” version offers a 2V data retention mode, reducing current consumption to 1mA maximum.
No. 111
No. 112
No. 207
No. 208
No. 303
No. 501
No. 507
*Electrical characteristics identical to those provided for the 45ns
access devices.
For more products and information
please visit our web site at
www.austinsemiconductor.com
MT5C1008
Rev. 6.5 7/02
VCC
A15
CE2
WE\
A13
A8
A9
A11
OE\
A10
CE\
DQ8
DQ7
DQ6
DQ5
DQ4
32-Pin Flat Pack (F)
MARKING
• Timing
12ns access
15ns access
20ns access
25ns access
35ns access
45ns access
55ns access
70ns access
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
DQ2
DQ3
VSS
DQ4
DQ5
DQ6
DQ7
OPTIONS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-Pin LCC (EC)
32-Pin SOJ (DCJ)
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
SRAM
MT5C1008
Austin Semiconductor, Inc.
FUNCTIONAL BLOCK DIAGRAM
VCC
I/O CONTROL
DQ8
ROW DECODER
A
A
A
A
A
A
A
A
A
GND
1,048,576-BIT
MEMORY ARRAY
DQ1
(LSB)
CE1\
CE2
COLUMN DECODER
(LSB)
A A A A A A A A
OE\
WE\
POWER
DOWN
NOTE: The two least significant row address bits (A8 and A6) are encoded using gray code.
TRUTH TABLE
MODE
STANDBY
STANDBY
READ
READ
WRITE
MT5C1008
Rev. 6.5 7/02
OE\
X
X
L
H
X
CE1\
H
X
L
L
L
CE2
X
L
H
H
H
WE\
X
X
H
H
L
DQ
HIGH-Z
HIGH-Z
Q
HIGH-Z
D
POWER
STANDBY
STANDBY
ACTIVE
ACTIVE
ACTIVE
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
SRAM
MT5C1008
Austin Semiconductor, Inc.
*Stresses at or greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated
in the operation section of this specification is not implied.
Exposure to absolute maximum rating conditions for extended
periods will affect reliability. Refer to page 17 of this
datasheet for a technical note on this subject.
** Junction temperature depends upon package type, cycle
time, loading, ambient temperature and airflow, and humidity.
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage Range (Vcc)...............................-.5V to +6.0V
Storage Temperature ....................................-65°C to +150°C
Short Circuit Output Current (per I/O)….......................20mA
Voltage on any Pin Relative to Vss................-.5V to Vcc+1 V
Max Junction Temperature**.......................................+150°C
Power Dissipation .....................................................................1 W
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC < TC < 125oC & -45oC to +85oC; VCC = 5.0V +10%)
DESCRIPTION
CONDITIONS
SYM
MIN
MAX
UNITS
NOTES
Input High (Logic 1) Voltage
VIH
2.2
VCC+0.5
V
1
Input Low (Logic 0) Voltage
VIL
-0.5
0.8
V
1, 2
0V<VIN<VCC
ILI
-10
10
µA
Output(s) disabled
0V<VOUT<VCC
ILO
-10
10
µA
Output High Voltage
IOH=-4.0mA
VOH
2.4
Output Low Voltage
IOL=8.0mA
VOL
Input Leakage Current
Output Leakage Current
PARAMETER
Power Supply
Current: Operating
CONDITIONS
1
V
1
-12
-15
MAX
-20
-25
-35
-45
250
180
150
140
135
125
mA
250
180
140
130
125
115
mA
ISBT
25
25
25
25
25
25
mA
ISBC
10
10
10
10
10
10
mA
SYM
CE\ < VIL; OE\, WE\, and CE2>VIH ICCSP
VCC = MAX, f = MAX = 1/tRC (MIN)
Output Open
*L version only
ICCLP *
Power Supply
Current: Standby
0.4
V
UNITS NOTES
3
CE\=VIH, CE2=VIL; Other Inputs at
<VIL, >VIH, VCC = MAX
f = 0 Hz
CE\ > VCC -0.2V; VCC = MAX
VIL < VSS -0.2V
VIH > VCC -0.2V; F = 0 Hz
CAPACITANCE
DESCRIPTION
Input Capacitance (A0-A16)
Output Capacitance
Input Capacitance (CE\, WE\, OE\)
MT5C1008
Rev. 6.5 7/02
CONDITIONS
o
TA = 25 C, f = 1MHz
VCC = 5V
SYM
MAX
UNITS
NOTES
CI
12
pF
4
CO
14
pF
4
CI
20
pF
4
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
SRAM
MT5C1008
Austin Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Note 5) (-55oC < TC < 125oC & -40oC to +85oC; VCC = 5.0V +10%)
DESCRIPTION
READ CYCLE
READ cycle time
Address access time
Chip Enable access time
Output hold from address change
Chip Enable to output in Low-Z
Chip disable to output in High-Z
Output Enable access time
Output Enable to output in Low-Z
Output disable to output in High-Z
WRITE CYCLE
WRITE cycle time
Chip Enable to end of write
Address valid to end of write
Address setup time
Address hold from end of write
WRITE pulse width
Data setup time
Data hold time
Write disable to output in Low-Z
Write Enable to output in High-Z
MT5C1008
Rev. 6.5 7/02
-12
-15
-20
-25
-35
-45
SYMBOL MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES
tRC
tAA
tACE
tOH
tLZCE
tHZCE
tAOE
tLZOE
tHZOE
12
tWC
tCW
tAW
tAS
tAH
tWP
tDS
tDH
12
11
11
0
0
11
8
0
5
tLZWE
tHZWE
15
12
12
3
3
20
15
15
3
3
7
7
0
3
3
7
7
0
7
3
3
0
15
12
12
0
0
12
8
0
5
3
3
0
20
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
3
3
0
20
20
0
15
35
25
25
0
0
25
20
0
5
10
20
ns
ns
ns
ns
ns
ns
ns
ns
ns
45
45
15
15
10
25
20
20
0
0
20
15
0
5
9
45
35
35
10
10
8
20
15
15
0
0
15
10
0
5
7
35
25
25
8
7
7
7
25
20
20
45
35
35
0
5
35
20
0
5
15
4, 6, 7
4, 6, 7
4, 6, 7
4, 6, 7
4, 6, 7
4, 6, 7
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
SRAM
MT5C1008
Austin Semiconductor, Inc.
+5V
+5V
AC TEST CONDITIONS
480
Input pulse levels ................................... Vss to 3.0V
Input rise and fall times ....................................... 5ns
Input timing reference levels ............................. 1.5V
Output reference levels ..................................... 1.5V
Output load .............................. See Figures 1 and 2
Q
30
255
480
Q
Fig. 1 Output Load
Equivalent
7.
NOTES
1.
2.
3.
4.
5.
6.
All voltages referenced to VSS (GND).
-2V for pulse width < 20ns
ICC is dependent on output loading and cycle rates.
The specified value applies with the outputs
unloaded, and f =
1
Hz.
t
RC (MIN)
This parameter is guaranteed but not tested.
Test conditions as specified with the output loading
as shown in Fig. 1 unless otherwise noted.
t
LZCE, tLZWE, tLZOE, t HZCE, tHZOE and tHZWE
are specified with CL = 5pF as in Fig. 2. Transition is
measured ±200mV typical from steady state voltage,
allowing for actual tester RC time constant.
8.
9.
10.
11.
12.
13.
5 pF
255
Fig. 2 Output Load
Equivalent
At any given temperature and voltage condition,
t
HZCE is less than tLZCE, and tHZWE is less than
t
LZWE and tHZOE is less than tLZOE.
WE\ is HIGH for READ cycle.
Device is continuously selected. Chip enables and
output enables are held in their active state.
Address valid prior to, or coincident with, latest
occurring chip enable.
t
RC = Read Cycle Time.
CE2 timing is the same as CE1\ timing. The
waveform is inverted.
Chip enable (CE1\, CE2) and write enable (WE\) can
initiate and terminate a WRITE cycle.
DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only)
DESCRIPTION
SYMBOL
CONDITIONS
VCC for Retention Data
MIN
2
VDR
MAX
---
UNITS NOTES
V
CE\ > (VCC - 0.2V)
Data Retention Current
VIN > (VCC - 0.2V)
or < 0.2V, f=0
VCC = 2V
Chip Deselect to Data
Retention Time
Operation Recovery Time
ICCDR
tCDR
0
tR
tRC
1.0
mA
---
ns
4
ns
4, 11
LOW Vcc DATA RETENTION WAVEFORM
DATA RETENTION MODE
VCC
4.5V
VDR > 2V
t
t
CDR
MT5C1008
Rev. 6.5 7/02
CE1\
VIH
VIL
CE2
VIH
VIL
1234
123456789
123
123456789
123
1234
123456789
123
1234
123456789
123
1234
123456789
123
1234
123456789
123
1234
123456789
123
1234
123456789
123
1234
4.5V
R
VDR
<VSS + 0.2V
12345678
1234
123
12345678
1234
123
12345678
1234
123
12345678
1234
123
12345678
1234
123
12345678
1234
123
12345678
1234
123
12345678
1234
123
123
123
123 DON’T CARE
123
1234
1234
1234
1234UNDEFINED
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
SRAM
MT5C1008
Austin Semiconductor, Inc.
READ CYCLE NO. 1 8, 9
tRC
ADDRESS
VALID
tAA
tOH
DQ
PREVIOUS DATA VALID
DATA VALID
READ CYCLE NO. 2 7, 8, 10, 12
tRC
CE\
tAOE
tHZOE
tLZOE
OE\
tLZCE
tACE
tHZCE
DQ
DATA VALID
tPU
tPD
Icc
MT5C1008
Rev. 6.5 7/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
6
SRAM
MT5C1008
Austin Semiconductor, Inc.
WRITE CYCLE NO. 1 12, 13
(Chip Enabled Controlled)
tWC
ADDRESS
tAW
tAH
tAS
tCW
CE\
tWP1
WE\
tDS
D
tDH
DATA VAILD
Q
HIGH Z
WRITE CYCLE NO. 2 7, 12, 13
(Write Enabled Controlled)
tWC
ADDRESS
tAW
tAH
tCW
CE\
tAS
tWP1
WE\
tDH
D
DATA VALID
Q
HIGH-Z
NOTE: Output enable (OE\) is inactive (HIGH).
MT5C1008
Rev. 6.5 7/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
7
SRAM
MT5C1008
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #111 (Package Designator C)
SMD 5962-89598, Case Outline Z
D
S1
S2
A
Q
L1
Pin 1
L
S
e
b
b1
E
NOTE
0o to 15o
SYMBOL
A
b
b1
c
D
E
E1
e
L
L1
Q
S
S1
S2
NOTE:
c
E1
SMD SPECIFICATIONS
MIN
MAX
--0.232
0.014
0.023
0.038
0.065
0.008
0.015
--1.700
0.350
0.405
0.390
0.420
0.100 BSC
0.125
0.200
0.150
--0.015
0.060
--0.100
0.005
--0.005
--Either configuration in detail A is allowed on SMD.
*All measurements are in inches.
MT5C1008
Rev. 6.5 7/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
8
SRAM
MT5C1008
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #112 (Package Designator CW)
SMD 5962-89598, Case Outline X
D
A
L
L1
b
e
Pin 1
b1
E
b2
E1
SYMBOL
A
b
b1
b2
D
E
E1
e
L
L1
SMD SPECIFICATIONS
MIN
MAX
0.089
0.111
0.016
0.020
0.045
0.055
0.009
0.011
1.585
1.615
0.585
0.605
0.595
0.610
0.090
0.110
0.040
0.060
0.125
0.175
*All measurements are in inches.
MT5C1008
Rev. 6.5 7/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
9
SRAM
MT5C1008
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #207 (Package Designator EC)
SMD 5962-89598, Case Outline U
See Detail A
A
L1
D
L
e
b
h x 45o
Detail A
E
L2
b2
b1
SYMBOL
A
b
b1
b2
D
E
e
h
L
L1
L2
SMD SPECIFICATIONS
MIN
MAX
0.080
0.100
0.022
0.028
0.006
0.022
0.040
--0.800
0.840
0.392
0.408
0.050 BSC
0.012 REF
0.070
0.080
0.090
0.110
0.003
0.015
*All measurements are in inches.
MT5C1008
Rev. 6.5 7/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
10
SRAM
MT5C1008
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #208 (Package Designator ECA)
SMD 5962-89598, Case Outline M
D1
A
L1
e
E1
E
See Detail A
L
D
b
Detail A
b2
b1
SYMBOL
A
b
b1
b2
D
D1
E
E1
e
L
L1
SMD SPECIFICATIONS
MIN
MAX
0.060
0.120
0.022
0.028
0.004
0.014
0.040
--0.442
0.458
0.300 BSC
0.540
0.560
0.400 BSC
0.050 BSC
0.045
0.055
0.075
0.095
*All measurements are in inches.
MT5C1008
Rev. 6.5 7/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
11
SRAM
MT5C1008
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #303 (Package Designator F)
SMD 5962-89598, Case Outline T
E
L
Pin 1
Index
e
32
1
17
16
D
b
Bottom View
S
S1
E1
Top View
A
c
Q
E2
E3
SYMBOL
A
b
c
D
E
E1
E2
E3
e
L
Q
S
S1
SMD SPECIFICATIONS
MIN
MAX
0.097
0.125
0.015
0.019
0.003
0.009
--0.830
0.400
0.420
--0.450
0.180
--0.030
--0.050 BSC
0.250
0.370
0.026
0.045
--0.045
0.000
---
*All measurements are in inches.
MT5C1008
Rev. 6.5 7/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
12
SRAM
MT5C1008
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #501 (Package Designator DCJ)
SMD 5962-89598, Case Outline 7
A
e
D
D1
B1
E2
b
E1
E
A2
SYMBOL
A
A2
B1
b
D
D1
E
E1
E2
e
SMD SPECIFICATIONS
MIN
MAX
0.132
0.144
0.026
0.036
0.030
0.040
0.015
0.019
0.812
0.828
0.740
0.760
0.405
0.415
0.435
0.445
0.360
0.380
0.050 BSC
*All measurements are in inches.
MT5C1008
Rev. 6.5 7/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
13
SRAM
MT5C1008
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
See Detail A
ASI Case #507 (Package Designator SOJ)
SMD 5962-89598, Case Outline Y
A1
j
1
32
1234567890123456789012345
1234567890123456789012345
1234567890123456789012345
1234567890123456789012345
1234567890123456789012345
1234567890123456789012345
B
D1
B2
b
D
B1
E2
e
e2
e1
A2
Base
Plane
17
16
S
A
S1
B3
Seating
Plane
E
E1
SYMBOL
A
A1
A2
B
B1
B2
B3
b
D
D1
E
E1
E2
e
e1
e2
j
S
S1
123
123
123
123123
123
Detail A
SMD SPECIFICATIONS
MIN
MAX
0.120
0.165
0.088
0.120
0.070 REF
0.010 REF
0.030R TYP
0.020 REF
0.025
0.045
0.015
0.019
0.816
0.838
0.750 REF
0.419
0.431
0.430
0.445
0.360
0.380
0.050 BSC
0.038 TYP
0.005
--0.005 TYP
0.030
0.040
0.020 TYP
*All measurements are in inches.
MT5C1008
Rev. 6.5 7/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
14
SRAM
MT5C1008
Austin Semiconductor, Inc.
ORDERING INFORMATION
EXAMPLE: MT5C1008CW-45/883C
Device
Package Speed
Options** Process
Number
Type
ns
MT5C1008
C
-12
L
/*
MT5C1008
CW
-12
L
/*
MT5C1008
C
-15
L
/*
MT5C1008
CW
-15
L
/*
MT5C1008
C
-20
L
/*
MT5C1008
CW
-20
L
/*
MT5C1008
C
-25
L
/*
MT5C1008
CW
-25
L
/*
MT5C1008
C
-35
L
/*
MT5C1008
CW
-35
L
/*
MT5C1008
C
-45
L
/*
MT5C1008
CW
-45
L
/*
MT5C1008
C
-55
L
/*
MT5C1008
CW
-55
L
/*
MT5C1008
C
-70
L
/*
MT5C1008
CW
-70
L
/*
EXAMPLE: MT5C1008ECA-25L/XT
Device
Package Speed
Options** Process
Number
Type
ns
MT5C1008
EC
-12
L
/*
MT5C1008
ECA
-12
L
/*
MT5C1008
EC
-15
L
/*
MT5C1008
ECA
-15
L
/*
MT5C1008
EC
-20
L
/*
MT5C1008
ECA
-20
L
/*
MT5C1008
EC
-25
L
/*
MT5C1008
ECA
-25
L
/*
MT5C1008
EC
-35
L
/*
MT5C1008
ECA
-35
L
/*
MT5C1008
EC
-45
L
/*
MT5C1008
ECA
-45
L
/*
MT5C1008
EC
-55
L
/*
MT5C1008
ECA
-55
L
/*
MT5C1008
EC
-70
L
/*
MT5C1008
ECA
-70
L
/*
EXAMPLE: MT5C1008F-25L/883C
Device
Package Speed
Options** Process
ns
Number
Type
EXAMPLE: MT5C1008DCJ-35/IT
Device
Package Speed
Options** Process
Number
Type
ns
DCJ
-12
L
/*
MT5C1008
MT5C1008
SOJ
-12
L
/*
MT5C1008
DCJ
-15
L
/*
MT5C1008
SOJ
-15
L
/*
MT5C1008
DCJ
-20
L
/*
MT5C1008
SOJ
-20
L
/*
MT5C1008
DCJ
-25
L
/*
MT5C1008
SOJ
-25
L
/*
MT5C1008
DCJ
-35
L
/*
MT5C1008
SOJ
-35
L
/*
MT5C1008
DCJ
-45
L
/*
MT5C1008
SOJ
-45
L
/*
MT5C1008
DCJ
-55
L
/*
MT5C1008
SOJ
-55
L
/*
MT5C1008
DCJ
-70
L
/*
MT5C1008
SOJ
-70
L
/*
MT5C1008
F
-12
L
/*
MT5C1008
F
-15
L
/*
MT5C1008
F
-20
L
/*
MT5C1008
F
-25
L
/*
MT5C1008
F
-35
L
/*
MT5C1008
F
-45
L
/*
MT5C1008
F
-55
L
/*
MT5C1008
F
-70
L
/*
*AVAILABLE PROCESSES
IT = Industrial Temperature Range
XT = Extended Temperature Range
883C = Full Military Processing
-40oC to +85oC
-55oC to +125oC
-55oC to +125oC
** OPTIONS
L = 2V Data Retention/Low Power
MT5C1008
Rev. 6.5 7/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
15
SRAM
Austin Semiconductor, Inc.
ASI TO DSCC PART NUMBER
CROSS REFERENCE
ASI Package Designator C & CW
ASI Part #
MT5C1008
ASI Package Designator EC & ECA
SMD Part #
ASI Part #
SMD Part #
MT5C1008C-20/883C
MT5C1008C-20L/883C
MT5C1008C-25/883C
MT5C1008C-25L/883C
MT5C1008C-35/883C
MT5C1008C-35L/883C
MT5C1008C-45/883C
MT5C1008C-45L/883C
MT5C1008C-55/883C
MT5C1008C-55L/883C
MT5C1008C-70/883C
MT5C1008C-70L/883C
5962-8959838MZA
5962-8959821MZA
5962-8959837MZA
5962-8959820MZA
5962-8959836MZA
5962-8959819MZA
5962-8959835MZA
5962-8959818MZA
5962-8959834MZA
5962-8959817MZA
5962-8959833MZA
5962-8959816MZA
MT5C1008EC-20/883C
MT5C1008EC-20L/883C
MT5C1008EC-25/883C
MT5C1008EC-25L/883C
MT5C1008EC-35/883C
MT5C1008EC-35L/883C
MT5C1008EC-45/883C
MT5C1008EC-45L/883C
MT5C1008EC-55/883C
MT5C1008EC-55L/883C
MT5C1008EC-70/883C
MT5C1008EC-70L/883C
5962-8959838MUA
5962-8959821MUA
5962-8959837MUA
5962-8959820MUA
5962-8959836MUA
5962-8959819MUA
5962-8959835MUA
5962-8959818MUA
5962-8959834MUA
5962-8959817MUA
5962-8959833MUA
5962-8959816MUA
MT5C1008CW-20/883C
MT5C1008CW-20L/883C
MT5C1008CW-25/883C
MT5C1008CW-25L/883C
MT5C1008CW-35/883C
MT5C1008CW-35L/883C
MT5C1008CW-45/883C
MT5C1008CW-45L/883C
MT5C1008CW-55/883C
MT5C1008CW-55L/883C
MT5C1008CW-70/883C
MT5C1008CW-70L/883C
5962-8959838MXA
5962-8959821MXA
5962-8959837MXA
5962-8959820MXA
5962-8959836MXA
5962-8959819MXA
5962-8959835MXA
5962-8959818MXA
5962-8959834MXA
5962-8959817MXA
5962-8959833MXA
5962-8959816MXA
MT5C1008ECA-20/883C
MT5C1008ECA-20L/883C
MT5C1008ECA-25/883C
MT5C1008ECA-25L/883C
MT5C1008ECA-35/883C
MT5C1008ECA-35L/883C
MT5C1008ECA-45/883C
MT5C1008ECA-45L/883C
MT5C1008ECA-55/883C
MT5C1008ECA-55L/883C
MT5C1008ECA-70/883C
MT5C1008ECA-70L/883C
5962-8959838MMA
5962-8959821MMA
5962-8959837MMA
5962-8959820MMA
5962-8959836MMA
5962-8959819MMA
5962-8959835MMA
5962-8959818MMA
5962-8959834MMA
5962-8959817MMA
5962-8959833MMA
5962-8959816MMA
ASI Package Designator DCJ & SOJ
ASI Package Designator F
ASI Part #
SMD Part #
ASI Part #
SMD Part #
MT5C1008F-20/883C
MT5C1008F-20L/883C
MT5C1008F-25/883C
MT5C1008F-25L/883C
MT5C1008F-35/883C
MT5C1008F-35L/883C
MT5C1008F-45/883C
MT5C1008F-45L/883C
MT5C1008F-55/883C
MT5C1008F-55L/883C
MT5C1008F-70/883C
MT5C1008F-70L/883C
5962-8959838MTA
5962-8959821MTA
5962-8959837MTA
5962-8959820MTA
5962-8959836MTA
5962-8959819MTA
5962-8959835MTA
5962-8959818MTA
5962-8959834MTA
5962-8959817MTA
5962-8959833MTA
5962-8959816MTA
MT5C1008DCJ-20/883C
MT5C1008DCJ-20L/883C
MT5C1008DCJ-25/883C
MT5C1008DCJ-25L/883C
MT5C1008DCJ-35/883C
MT5C1008DCJ-35L/883C
MT5C1008DCJ-45/883C
MT5C1008DCJ-45L/883C
MT5C1008DCJ-55/883C
MT5C1008DCJ-55L/883C
MT5C1008DCJ-70/883C
MT5C1008DCJ-70L/883C
5962-8959838M7A
5962-8959821M7A
5962-8959837M7A
5962-8959820M7A
5962-8959836M7A
5962-8959819M7A
5962-8959835M7A
5962-8959818M7A
5962-8959834M7A
5962-8959817M7A
5962-8959833M7A
5962-8959816M7A
MT5C1008SOJ-20/883C
MT5C1008SOJ-20L/883C
MT5C1008SOJ-25/883C
MT5C1008SOJ-25L/883C
MT5C1008SOJ-35/883C
MT5C1008SOJ-35L/883C
MT5C1008SOJ-45/883C
MT5C1008SOJ-45L/883C
MT5C1008SOJ-55/883C
MT5C1008SOJ-55L/883C
MT5C1008SOJ-70/883C
MT5C1008SOJ-70L/883C
5962-8959838MYA
5962-8959821MYA
5962-8959837MYA
5962-8959820MYA
5962-8959836MYA
5962-8959819MYA
5962-8959835MYA
5962-8959818MYA
5962-8959834MYA
5962-8959817MYA
5962-8959833MYA
5962-8959816MYA
* ASI part number is for reference only. Orders received referencing
the SMD part number will be processed per the SMD.
MT5C1008
Rev. 6.5 7/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
16
SRAM
Austin Semiconductor, Inc.
MT5C1008
DATE: 2/6/01
Technical Note:
128Kx8 SRAM – Maximum Recommended Supply
Voltage and Ambient Temperature
Compliance:
This product fully meets and is tested in compliance with SMD# 5962-89598 and tested in accordance
with JESD78.
Specific Product Affected:
Die Manufacturer: Alliance Semiconductor Corporation
Die Name: AS2008SA
Device Types: MT5C1008 , MT5C1009
Speed Grades: All
Package Designators: All
Identifying Date Code Marking: Change implemented on product starting with date code 0100.
Characteristic Identified:
Austin Semiconductor, Inc. has received notification from this die vendor, Alliance Semiconductor Corp.,
that operation at high Vcc’s of 6 volts and beyond may result in a latch-up condition. This can cause
permanent damage to the device.
Recommendation:
During use in system applications and during manufacturing processes, including Burn-In and Test, the
devices should not be subjected to Vcc Supply Voltages higher than 5.5Volts at 125°C.
MT5C1008
Rev. 6.5 7/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
17