ADVANCED INFORMATION MX26L6419 64M [x16] SINGLE 3V PAGE MODE MTP MEMORY FEATURES • 3.0V to 3.6V operation voltage • Block Structure - 64 x 64Kword Erase Blocks • Fast random / page mode access time - 100/25 ns Read Access Time (page depth:8-word) • 128-bit Protection Register - 64-bit Unique Device Identifier - 64-bit User Programmable OTP Cells • 16-Word Write Buffer - 14 us/word Effective Programming Time • Enhanced Data Protection Features Absolute Protection with VPEN = GND - Flexible Block Locking - Block Erase/Program Lockout during Power Transitions Software Feature Performance Packaging • Support Common Flash Interface (CFI) - MTP device parameters stored on the device and provide the host system to access. Hardware Feature • ACC pin - 12V VPP for fast program/erase mode. • VPEN pin - For Erase /Program/ Block Lock enable. • VCCQ Pin - The output buffer power supply, control the device 's output voltage. • RESET pin - Hardware reset • Low power dissipation - typical 15mA active current for page mode read - 80uA/(max.) standby current • High Performance - Block erase time: 2s typ. - Word programming time: 210us typ. - Block programming time: 0.8s typ. (using Write to Buffer Command) • Program/Erase Endurance cycles: 100 cycles - 48-Lead TSOP Technology - Two bits per cell Nbit (0.25u) MTP Technology electrical erasure and programming. The device uses a command register to manage this functionality. GENERAL DESCRIPTION The MXIC's MX26L6419 series MTP use the most advance 2 bits/cell Nbit technology, double the storage capacity of memory cell. The device provide the high density MTP memory solution with reliable performance and most cost-effective. The MXIC's Nbit technology reliably stores memory contents even after the specific erase and program cycles. The MXIC cell is designed to optimize the erase and program mechanisms by utilizing the dielectric's character to trap or release charges from ONO layer. The device organized as by 16 bits of output bus. The device is packaged in 48-Lead TSOP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers. The device uses a 3.0V to 3.6V VCC supply to perform the High Reliability Erase and auto Program/Erase algorithms. The device offers fast access time and allowing operation of high-speed microprocessors without wait states. The device augment EPROM functionality with in-circuit The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V. P/N:PM0946 REV. 0.3, OCT. 08, 2003 1 MX26L6419 PIN CONFIGURATION 48-TSOP (12mm x 20mm) A15 A14 A13 A12 A11 A10 A9 A8 A21 A20 WE RESET ACC VPEN A19 A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 MX26L6419 (x16 only) Normal Type 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 VCCQ GND Q15 Q7 Q14 Q6 Q13 Q5 Q12 Q4 VCC Q11 Q3 Q10 Q2 Q9 Q1 Q8 Q0 OE GND CE A0 PIN DESCRIPTION SYMBOL PIN NAME A0~A21 Address Input Q0~Q15 Data Inputs/Outputs CE Chip Enable Input WE Write Enable Input OE Output Enable Input RESET Reset Power Down mode VPEN ERASE/PROGRAM/BLOCK Lock Enable ACC Program/erase acceleration pin VCCQ Output Buffer Power Supply VCC Device Power Supply GND Device Ground Note: ACC pin and VPEN pin are not allowed to be operation at the same time. P/N:PM0946 REV. 0.3, OCT. 08, 2003 2 MX26L6419 BLOCK DIAGRAM CE OE WE RESET CONTROL INPUT HIGH VOLTAGE LOGIC LATCH BUFFER Y-DECODER AND X-DECODER ADDRESS A0-A21 PROGRAM/ERASE WRITE STATE MACHINE (WSM) STATE REGISTER MTP ARRAY Y-PASS GATE SENSE AMPLIFIER PGM DATA HV ARRAY SOURCE HV COMMAND DATA DECODER COMMAND DATA LATCH PROGRAM DATA LATCH Q0-Q15 I/O BUFFER P/N:PM0946 REV. 0.3, OCT. 08, 2003 3 MX26L6419 Figure 1. Block Architecture MTP memory reads erases and writes in-system via the local CPU. All bus cycles to or from the MTP memory conform to standard microprocessor bus cycles. A21~A0 3FFFFF 3F0000 64-Kword Block 63 . . . 1FFFFF 1F0000 64-Kword Block 31 . . . 01FFFF 010000 00FFFF 64-Kword Block 1 64-Kword Block 0 000000 Word Mode (x16) P/N:PM0946 REV. 0.3, OCT. 08, 2003 4 MX26L6419 Table 1. Bus Operations Command Sequence Read Array Notes 3,4 RESET VIH CE Output Standby RESET Read ID Read Disable Mode/ Query Power Down Mode Read Read Status Status (WSM off) (WSM on) Write 8,9 VIH VIH VIL VIH VIH Enabled Enabled Disabled X Enabled OE (1) VIL VIH X X WE (1) VIH VIH X Address X X VPEN X X Q (2) Data out High Z VIH VIH Enabled Enabled Enabled Enabled VIL VIL VIL VIL VIH X VIH VIH VIH VIH VIL X X X X X X See See X Figure 2 Table 5 X X X X VPENH High Z High Z Note 6 Note 7 VIH Data out Q7=Data out Data in Q15-8=High Z Q6-0=High Z NOTES: 1. OE and WE should never be enabled simultaneously. 2. Q refers to Q0~Q15. 3. Refer to DC Characteristics. When VPEN < VPENLK , memory contents can be read, but not altered. 4. X can be VIL or VIH for control and address pins, and VPENLK or VPENH for VPEN . See DC Characteristics for VPENLK and VPENH voltages. 5. High Z will be VOH with an external pull-up resistor. 6. See Section , "Read Identifier Codes" for read identifier code data. 7. See Section , "Read Query Mode Command" for read query data. 8. Command writes involving block erase, program, or lock-bit configuration are reliably executed when VPEN= VPENH and VCC is within specification. 9. Refer to Table 2 on page 7 for valid DIN during a write operation. P/N:PM0946 REV. 0.3, OCT. 08, 2003 5 MX26L6419 FUNCTION OUTPUT DISABLE The device includes on-chip program/erase control circuitry. The Write State Machine (WSM) controls block erase and word/page program operations. Operational modes are selected by the commands written to the Command User Interface (CUI). The Status Register indicates the status of the WSM and when the WSM successfully completes the desired program or block erase operation. When OE is at VIH, output from the devices is disabled. Data input/output are in a high-impedance(High-Z) state. STANDBY When CE disable the device (see table1) and place it in standby mode. The power consumption of this device is reduced. Data input/output are in a high-impedance(HighZ) state. If the memory is deselected during block erase, program or lock-bit configuration, the internal control circuits remain active and the device consume normal active power until the operation completes. A Powerdown mode is enabled when the RESET pin is at GND minimizing power consumption. READ The device has three read modes, which accesses to the memory array, the Device Identifier or the Status Register independent of the VPEN voltage. The appropriate read command are required to be written to the CUI. Upon initial device powerup or after exit from powerdown, the device automatically resets to read array mode. In the read array mode, low level input to CE and OE, high level input to WE and RESET or low level input to RESET, and address signals to the address inputs (A21-A0) output the data of the addressed location to the data input/output (Q15~Q0). POWER-DOWN When RESET pin is at VIL, the device is in the powerdown mode and its power consumption is substantially low around 25uA. During read modes, the memory is deselected and the data input/output are in a highimpedance(High-Z) state. To return from power down mode requires RESET pin at VIH. After return from powerdown, the CUI is reset to Read Array , and the Status Register is set to value 80H. During block erase program or lock-bit configuration modes, RESET pin at VIL will abort either operation. Memory array data of the block being altered become invalid. When reading information in read array mode, the device defaults to asynchronous page mode. In this state, data is internally read and stored in a high-speed page buffer. A2:0 addresses data in the page buffer. The page size is 8 words. Asynchronous word mode is supported with no additional commands required. Time tPHWL is required after RESET goes to logic-high (VIH) before another command can be written. WRITE READ QUERY Writes to the CUI enables reading of memory array data, device identifiers and reading and clearing of the Status Register and when VPEN=VPENH block erasure program and lock-bit configuration. The CUI is written when the device is enable, WE is active and OE is at high level. Address and data are latched on the earlier rising edge of WE and CE. Standard micro-processor write timings are used. The read query operation outputs block status information, CFI (Common Flash Interface) ID string, system interface information, device geometry information and MXIC extended query information. P/N:PM0946 REV. 0.3, OCT. 08, 2003 6 MX26L6419 COMMAND DEFINITIONS Device operations are selected by writing specific address and data sequences into the CUI. Table 3 defines the valid register command sequences. When VPEN<VPENLK only read operations from the status register, query, indentifier code or blocks are enabled. When VPEN=VPENH enables block erase program and lock-bit configuration operations. Table 2. Command Definitions Command Read Read Read Read Clear Write to Word Sector Sequence Array ID Query Status Status Buffer Program Erase 7,8,9 10,11 9,10 Register Register Notes 5 6 Bus Write Cycles Req'd 1 >2 >2 2 1 >2 2 2 First Bus Write Write Write Write Write Write Write Write X X X X X BA X BA FFH 90H 98H 70H 50H E8H 40H/10H 20H Second Bus Operation(2) Read Read Read Write Write Write Read Query Address(3) IA QA X BA PA BA Data(4,5) ID QD SRD N PD D0H Operation(2) Write Cycles Address(3) Data(4,5) Command Configur- Set Sector Clear Protection Sequence ation Lock-Bit Sector Program Lock-Bit Notes 12 Bus Write Cycles Req'd 2 2 2 2 First Bus Operation(2) Write Write Write Write Write Cycle Address(3) X X X X Data(4,5) B8H 60H 60H C0H Second Bus Operation(2) Write Write Write Write Write Cycle Address(3) X BA X PA Data(4,5) CC 01H D0H PD P/N:PM0946 REV. 0.3, OCT. 08, 2003 7 MX26L6419 NOTES: 1. Bus operations are defined in Table 1. 2. X = Any valid address within the device. BA = Address within the block. IA = Identifier Code Address: see Figure 2 and Table 13. QA = Query database Address. PA = Address of memory location to be programmed. RCD = Data to be written to the read configuration register. This data is presented to the device on A15~A0 ; all other address inputs are ignored. 3. ID = Data read from Identifier Codes. QD = Data read from Query database. SRD = Data read from status register. See Table 14 for a description of the status register bits. PD = Data to be programmed at location PA. Data is latched on the rising edge of WE. CC = Configuration Code. 4. The upper byte of the data bus (Q8-Q15) during command writes is a "Don't Care" in x16 operation. 5. Following the Read Identifier Codes command, read operations access manufacturer, device and block lock codes. See Section 4.3 for read identifier code data. 6. If the WSM is running, only Q7 is valid; Q15-Q8 and Q6-Q0 float, which places them in a high impedance state. 7. After the Write to Buffer command is issued check the XSR to make sure a buffer is available for writing. 8. The number of words to be written to the Write Buffer = N + 1, where N = word count argument. Count ranges on this device for word mode are N = 0000H to N =000FH. The third and consecutive bus cycles, as determined by N, are for writing data into the Write Buffer. The Confirm command (D0H) is expected after exactly N + 1 write cycles; any other command at that point in the sequence aborts the write to buffer operation. Please see Figure 4. "Write to Buffer Flowchart" for additional information. 9. The write to buffer or erase operation does not begin until a Confirm command (D0h) is issued. 10.Attempts to issue a block erase or program to a locked block. 11.Either 40H or 10H are recognized by the WSM as the word program setup. 12.The clear block lock-bits operation simultaneously clears all block lock-bits. P/N:PM0946 REV. 0.3, OCT. 08, 2003 8 MX26L6419 Figure 2. Device Identifier Code Memory Map 3FFFFF Block 63 Reserved for Future Implementation 3F0003 Block 63 Lock Configuration 3F0002 Reserved for Future Implementation 3F0000 3EFFFF (Block 32 through 62) Block 31 Reserved for Future Implementation 1F0003 Block 31 Lock Configuration 1F0002 Reserved for Future Implementation 1F0000 1EFFFF (Block 2 through 30) 01FFFF Block 1 Reserved for Future Implementation 010003 010002 010000 00FFFF Block 1 Lock Configuration Reserved for Future Implementation Block 0 Reserved for Future Implementation 000004 000003 000002 Block 0 Lock Configuration Device Code 000001 Manufacturer Code 000000 NOTE: Data is always given on the low byte in x16 mode (upper byte contains 00h). P/N:PM0946 REV. 0.3, OCT. 08, 2003 9 MX26L6419 Read Array Command The device is in Read Array mode on initial device power up and after exit from power down, or by writing FFH to the Command User Interface. The read configuration register defaults to asynchronous read page mode. The device remains enabled for reads until another command is written. The Read Array command functions independently of the VPEN voltage. Read Query Mode Command This section defines the data structure or "Database" returned by the Common Flash Interface (CFI) Query command. System software should parse this structure to gain critical information such as block size, density, x8/x16, and electrical specifications. Once this information has been obtained, the software will know which command sets to use to enable MTP writes, block erases, and otherwise control the MTP component. Query Structure Output The Query Database allows system software to gain information for controlling the MTP component. This section describes the device CFI-compliant interface that allows the host system to access Query data. Query data are always presented on the lowest-order data outputs (DQ 0-7) only. The numerical offset value is the address relative to the maximum bus width supported by the device. On this family of devices, the Query table device starting address is a 10h, which is a word address for x16 devices. For a word-wide (x16) device, the first two bytes of the Query structure, "Q" and "R" in ASCII, appear on the low byte at word addresses 10h and 11h. This CFI-compliant device outputs 00H data on upper bytes. Thus, the device outputs ASCII "Q" in the low byte (DQ 0-7 ) and 00h in the high byte (DQ 8-15 ). At Query addresses containing two or more bytes of information, the least significant data byte is presented at the lower address, and the most significant data byte is presented at the higher address. P/N:PM0946 REV. 0.3, OCT. 08, 2003 10 MX26L6419 In all of the following tables, addresses and data are represented in hexadecimal notation, so the "h" suffix has been dropped. In addition, since the upper byte of word-wide devices is always "00h",” the leading "00" has been dropped from the table notation and only the lower byte value is shown. Any x16 device outputs can be assumed to have 00h on the upper byte in this mode. Table 3. Summary of Query Structure Output as a Function of Device and Mode Device Type/Mode Query start location in maximum device bus width addresses x16 device x16 mode 10h x16 device x8 mode N/A (1) Query data with maximum device bus width addressing Hex Offset 10: 11: 12: Hex Code 0051 0052 0059 N/A (1) ASCII Value "Q" "R" "Y" Query data with byte addressing Hex Offset 20: 21: 22: 20: 21: 22: Hex Code 51 00 52 51 51 52 ASCII Value "Q" "Null" "R" "Q" "Q" "R" NOTE: 1. The system must drive the lowest order addresses to access all the device's array data when the device is configured in x8 mode. Therefore, word addressing, where these lower addresses are not toggled by the system, is "Not Applicable" for x8-configured devices. Table 4. Example of Query Structure Output of a x16- and x8-Capable Device Offset A15-A0 0010h 0011h 0012h 0013h 0014h 0015h 0016h 0017h 0018h ... Word Addressing Hex Code Value D15 - D0 0051 "Q" 0052 "R" 0059 "Y" P_IDLO PrVendor P_IDHI ID# PLO PrVendor PHI TblAdr A_IDLO AltVendor A_IDHI ID# ... ... Offset A7-A0 20h 21h 22h 23h 24h 25h 26h 27h 28h ... P/N:PM0946 Byte Addressing Hex Code Value D7 - D0 51 "Q" 51 "Q" 52 "R" 52 "R" 59 "Y" 59 "Y" P_IDLO PrVendor P_IDLO ID# P_IDHI ID# ... ... REV. 0.3, OCT. 08, 2003 11 MX26L6419 Query Structure Overview The Query command causes the MTP component to display the Common Flash Interface (CFI) Query structure or "database". The structure sub-sections and address locations are summarized below. Table 5. Query Structure (1) Offset Sub-Section Name Description 00h Manufacturer Code 01h Device Code (BA+2)h (2) Block Status Register Block-Specific Information 04-0Fh Reserved Reserved for Vendor-Specific Information 10h CFI Query Identification String Reserved for Vendor-Specific Information 1Bh System Interface Information Command Set ID and Vendor Data Offset 27h Device Geometry Definition MTP Device Layout P (3) Primary MXIC-Specific Extended Vendor-Defined Additional Information Specific to the Query Table Primary Vendor Algorithm NOTES: 1. Refer to the Query Structure Output section and offset 28h for the detailed definition of offset address as a function of device bus width and mode. 2. BA = Block Address beginning location (i.e., 02000h is block 2s beginning location when the block size is 128 Kbyte). 3. Offset 15 defines "P" which points to the Primary MXIC-Specific Extended Query Table. Block Status Register The block status register indicates whether an erase operation completed successfully or whether a given block is locked or can be accessed for MTP program/erase operations. Table 6. Block Status Register Offset (BA+2)h (1) Length 1 Description Block Lock Status Register Address Value BA+2: --00 or --01 BA+2: (bit 0): 0 or 1 BA+2: (bit 1-7): 0 BSR.0 Block Lock Status 0 = Unlocked 1 = Locked BSR 1-7: Reserved for Future Use NOTE: 1. BA = The beginning location of a Block Address (i.e., 008000h is block 1s (64-KB block) beginning location in word mode). P/N:PM0946 REV. 0.3, OCT. 08, 2003 12 MX26L6419 CFI Query Identification String The CFI Query Identification String provides verification that the component supports the Common Flash Interface specification. It also indicates the specification version and supported vendor-specified command set(s). Table 7. CFI Identification Offset Length Description Add. 10 11: 12: 13: 14: 15: 16: 17: 18: 19: 1A: 10h 3 Query-unique ASCII string "QRY" 13h 2 15h 2 Primary vendor command set and control interface ID code. 16-bit ID code for vendor-specified algorithms Extended Query Table primary algorithm address 17h 2 19h 2 Alternate vendor command set and control interface ID code. 0000h means no second vendor-specified algorithm exists Secondary algorithm Extended Query Table address. 0000h means none exists Hex Code --51 --52 --59 --01 --00 --31 --00 --00 --00 --00 --00 Value Add. Hex Code Value 1B: --30 3.0V 1C: --36 3.6 V 1D: --00 0.0V 1E: --00 0.0V 1F: 20: 21: 22: 23: 24: 25: 26: --07 --07 --0A --00 --04 --04 --04 --00 128us 128us 1s NA 2ms 2ms 16s NA "Q" "R" "Y" System Interface Information The following device information can optimize system interface software. Table 8. System Interface Information Offset 1Bh 1Ch 1Dh 1Eh 1Fh 20h 21h 22h 23h 24h 25h 26h Length 1 1 1 1 1 1 1 1 1 1 1 1 Description VCC logic supply minimum program/erase voltage bits 0-3 BCD 100 mV bits 4-7 BCD volts VCC logic supply maximum program/erase voltage bits 0-3 BCD 100 mV bits 4-7 BCD volts VPP [programming] supply minimum program/erase voltage bits 0-3 BCD 100 mV bits 4-7 HEX volts VPP [programming] supply maximum program/erase voltage bits 0-3 BCD 100 mV bits 4-7 HEX volts "n" such that typical single word program time-out = 2nus "n" such that typical max. buffer write time-out = 2nus "n" such that typical block erase time-out = 2nms "n" such that typical full chip erase time-out = 2nms "n" such that maximum word program time-out = 2n times typical "n" such that maximum buffer write time-out = 2n times typical "n" such that maximum block erase time-out = 2n times typical "n" such that maximum chip erase time-out = 2n times typical P/N:PM0946 REV. 0.3, OCT. 08, 2003 13 MX26L6419 Device Geometry Definition This field provides critical details of the MTP device geometry. Table 9. Device Geometry Definition Offset Length Description 27h 28h 1 2 2Ah 2 "n" such that device size = 2n in number of bytes MTP device interface: x8 async(28:00,29:00), x16 async(28:01,29:00), x8/x16 async(28:02,29:00) "n" such that maximum number of bytes in write buffer = 2n 2Ch 1 2Dh 4 Number of erase block regions within device: 1. x = 0 means no erase blocking; the device erases in "bulk" 2. x specifies the number of device or partition regions with one or more contiguous same-size erase blocks 3. Symmetrically blocked partitions have one blocking region 4. Partition size = (total blocks) x (individual block size) Erase Block Region 1 Information bits 0-15 = y, y+1 = number of identical-size erase blocks bits 16-31 = z, region erase block(s) size are z x 256 bytes P/N:PM0946 Code See Table Below 27: --17 28: --01 x16 29: --00 2A: --05 32 2B: --00 2C: --01 2D: 2E: 2F: 30: --3F --00 --00 --02 1 REV. 0.3, OCT. 08, 2003 14 MX26L6419 Primary-Vendor Specific Extended Query Table Certain MTP features and commands are optional. The Primary Vendor-Specific Extended Query table specifies this and other similar information. Table 10. Primary Vendor-Specific Extended Query Offset(1) Length P=31h (P+0)h 3 (P+1)h (P+2)h (P+3)h 1 (P+4)h 1 (P+5)h (P+6)h (P+7)h (P+8)h (P+9)h (P+A)h (P+B)h (P+C)h (P+D)h 4 Major version number, ASCII Minor version number, ASCII Optional feature and command support (1=yes, 0=no) bits 9-31 are reserved; undefined bits are "0". If bit 31 is "1" then another 31 bit field of optional features follows at the end of the bit-30 field. bit 0 Chip erase supported bit 1 Suspend erase not supported bit 2 Suspend program not supported bit 3 Legacy lock/unlock supported bit 4 Queued erase supported bit 5 Instant Individual block locking supported bit 6 Protection bits supported bit 7 Page-mode read supported bit 8 Synchronous read supported Hex Code 31: --50 32: --52 33: --49 34: --31 35: --31 36: --C8 37: --00 38: --00 39: --00 bit 0 = 0 bit 1 = 0 bit 2 = 0 bit 3 = 1(1) bit 4 = 0 bit 5 = 0 bit 6 = 1 bit 7 = 1 bit 8 = 0 1 Reserved for future use 3A: --00 Block status register mask bits 2-15 are Reserved; undefined bits are "0" bit 0 Block Lock-Bit Status register active bit 1 Block Lock-Down Bit Status active VCC logic supply highest performance program/erase voltage bits 0-3 BCD value in 100 mV bits 4-7 BCD value in volts VPP optimum program/erase supply voltage bits 0-3 BCD value in 100 mV bits 4-7 HEX value in volts 3B: 3C: --01 --00 bit 0 = 1 bit 1 = 0 Yes No 3D: --33 3.3V 3E: --00 0.0V 2 1 1 Description (Optional MTP Features and Commands) Primary extended query table Unique ASCII string "PRI" Add. Value "P" "R" "I" "1" "1" No No No Yes(1) No No Yes Yes No NOTE: 1. Future devices may not support the described "Legacy Lock/Unlock" function. Thus bit 3 would have a value of "0". P/N:PM0946 REV. 0.3, OCT. 08, 2003 15 MX26L6419 Table 11. Protection Register Information Offset(1) Length P=31h (P+E)h 1 (P+F)h (P+10)h (P+11)h (P+12)h Description (Optional MTP Features and Commands) Number of Protection register fields in JEDEC ID space. "00h," indicates that 256 protection bytes are available Protection Field 1: Protection Description This field describes user-available One Time Programmable (OTP) protection register bytes. Some are pre-programmed with device-unique serial numbers. Others are user-programmable. Bits 0-15 point to the protection register lock byte, the section's first byte. The following bytes are factory pre-programmed and user-programmable. bits 0-7 = Lock/bytes JEDEC-plane physical low address bits 8-15 = Lock/bytes JEDEC-plane physical high address bits 16-23 = "n" such that 2 n = factory pre-programmed bytes bits 24-31 = "n" such that 2 n = user-programmable bytes Add. Value 3F: Hex Code --01 40: --00 00h 01 NOTE: 1. The variable P is a pointer which is defined at CFI offset 15h. Table 12. Page Read Information Offset(1) Length P=31h (P+13)h 1 (P+14)h 1 (P+15)h Description (Optional MTP Features and Commands) Page Mode Read capability bits 0-7 = "n" such that 2n HEX value represents the number of read-page bytes. See offset 28h for device word width to determine page-mode data output width. 00h indicates no read page buffer. Number of synchronous mode read configuration fields that follow. 00h indicates no burst capability. Reserved for future use Add. Hex Code Value 44: --04 16 byte 45: --00 0 46: NOTE: 1. The variable P is a pointer which is defined at CFI offset 15h. P/N:PM0946 REV. 0.3, OCT. 08, 2003 16 MX26L6419 DEVICE OPERATION SILICON ID READ The Silicon ID Read mode allows the reading out of a binary code from the device and will identify its manufacturer and type. This mode is intended for use by programming equipment for the purpose of automatically matching the device to be programmed with its corresponding programming algorithm. This mode is functional over the entire temperature range of the device. During the "Silicon ID Read" Mode, manufacturer's code (MXIC=C2H) can be read out by setting A0=VIL and device identifier can be read out by setting A0=VIH. To terminate the operation, it is necessary to write the read command. The "Silicon ID Read" command functions independently of the VPEN voltage. This command is valid only when the WSM is off. To activate this mode, the two cycle "Silicon ID Read" command is requested. (The ID code value is illustrated in Table 13.) Table 13. MX26L6419 Silicon ID Codes Type Address (1) Code (HEX) Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Manufacture Code 00000 C2H 1 1 0 0 0 0 1 0 Device Code 00001 00AEH 1 0 1 0 1 1 1 0 Block Lock Configuration X0002 (2) - Block is Unlocked DQ0=0 - Block is Locked DQ0=1 - Reserved for Future Use DQ1-7 Notes: 1. The lowest order address line is A0. 2. X selects the specific blocks lock configuration code. P/N:PM0946 REV. 0.3, OCT. 08, 2003 17 MX26L6419 Table 14. Status Register Definitions High Z Symbol When Status Busy? SR.7 No WRITE STATE MACHINE STATUS SR.6 Yes RESERVED SR.5 Yes ERASE AND CLEAR LOCK-BITS STATUS SR.4 Yes SR.3 Yes PROGRAM AND SET LOCK-BIT STATUS PROGRAMMING VOLTAGE STATUS SR.2 Yes RESERVED SR.1 Yes DEVICE PROTECT STATUS SR.0 Yes RESERVED Definition Notes "1" "0" Busy Ready 1 Error in Block Erasure or Clear Lock-Bits Successful Block Erase or Clear Lock-Bits Error in Setting Lock-Bit Successful Set Block Lock Bit Low Programming Voltage Programming Voltage Detected, Operation OK Aborted 2 Block Lock-Bit Detected, Operation Abort 4 Unlock 3 5 Notes 1. Check SR.7 to determine block erase, program, or lock-bit configuration completion. SR.6-SR.0 are not driven while SR.7 = 0 2. If both SR.5 and SR.4 are "1" after a block erase or lock-bit configuration attempt, an improper command sequence was entered. 3. SR.3 does not provide a continuous programming voltage level indication. The WSM interrogates and indicates the programming voltage level only after Block Erase, Program, Set Block Lock-Bit, or Clear Block Lock-Bits command sequences. 4. SR.1 does not provide a continuous indication of block lock-bit values. The WSM interrogates the block lock-bits only after Block Erase, Program, or Lock-Bit configuration command sequences. It informs the system, depending on the attempted operation, if the block lock-bit is set. Read the block lock configuration codes using the Read Identifier Codes command to determine block lock-bit status. 5. SR.0 is reserved for future use and should be masked when polling the status register. Table 15. Extended Status Register Definitions High Z Symbol When Status Busy? XSR.7 No WRITE BUFFER STATUS XSR.6- Yes RESERVED XSR.0 Definition Notes "1" Write buffer available "0" Write buffer not available 1 2 Notes: 1. After a Buffer-Write command, XSR.7 = 1 indicates that a Write Buffer is available. 2. XSR.6-XSR.0 are reserved for future use and should be masked when polling the status register. P/N:PM0946 REV. 0.3, OCT. 08, 2003 18 MX26L6419 be read when CE is VIL. XSR.7 indicates if the Write Buffer is available. READ STATUS REGISTER COMMAND The Status Register is read after writing the Read Status Register command of 70H to the Command User Interface. Also, after starting the internal operation the device is set to the Read Status Register mode automatically. If the buffer is available, the number of words to be program is written to the device. Next, the start address is given along with the write buffer data. Subsequent writes provide additional device addresses and data, depending on the count. After the last buffer data is given, a Write Confirm command must be issued. The WSM beginning copy the buffer data to the MTP array. The contents of Status Register are latched on the later falling edge of OE or the first edge of CE that enables the device OE must be toggle to VIH or the device must be disable before further reads to update the status register latch. The Read Status Register command functions independently of the VPEN voltage. If an error occurs while writing, the device will stop writing, and status register bit SR.4 will be set to a "1" to indicate a program failure. The internal WSM verify only detects errors for "1" that do not successfully program to "0" . If a program error is detected, the status register should be cleared. Any time SR.4 and/or SR.5 is set, the device will not accept any more Write to Buffer commands. Reliable buffered writes can only occur when VCC is valid and VPEN = VPENH. Also, successful programming requires that the corresponding block lock-bit be reset. CLEAR STATUS REGISTER COMMAND The Erase Status, Program Status, Block Status bits and protect status are set to "1" by the Write State Machine and can only be reset by the Clear Status Register command of 50H. These bits indicates various failure conditions. WORD PROGRAM COMMANDS BLOCK ERASE COMMAND Word program is executed by a two-command sequence. The Word Program Setup command of 40H is written to the Command Interface, followed by a second write specifying the address and data to be written. The WSM controls the program pulse application and verify operation. The CPU can detect the completion of the program event by analyzing the status register bit SR.7. Automated block erase is initiated by writing the Block Erase command of 20H followed by the Confirm command of D0H. An address within the block to be erased is required (erase changes all block data to FFH). Block preconditioning, erase, and verify are handled internally by the WSM (invisible to the system). The CPU can detect block erase completion by analyzing the status register bit SR.7. Toggle OE, CE to update the status register. The CUI remains in read status register mode until a new command is issued. Also, reliable block erasure can only occur when VCC is valid and VPEN = VPENH . If a word program is attempted while VPEN_V PENLK, status register bits SR.4 and SR.3 will be set to "1". Successful word programs require that the corresponding block lock-bit be cleared. If a word program is attempted when the corresponding block lock-bit is set, SR.1 and SR.4 will be set to "1". ACC FAST PROGRAM/ERASE FUNCTIONS WRITE TO BUFFER COMMAND When VPP is between 3.0V and 3.6V, all program and erase current is drawn through the VCC pin. When ACC pin is connected to a 12V power supply, the device draws program and erase current directly from the ACC pin. This eliminates the need for an external switching transistor control the voltage VPP. To program the device, a Write to Buffer command is issue first. A variable number of bytes, up to the buffer size, can be loaded into the buffer and written to the MTP device. First, the Write to Buffer Setup command is issued along with the Block Address (see Figure 4, Write to Buffer Flowchart on page 25). After the command is issued, the extended Status Register (XSR) can P/N:PM0946 REV. 0.3, OCT. 08, 2003 19 MX26L6419 The 12V ACC mode enhances programming performance during the short period of time typically found in manufacturing processes; however, it is not intended for extended use. ACC pin may be connected to 12V for a total of 80 hours maximum. Stressing the device beyond these limits may cause permanent damage. P/N:PM0946 REV. 0.3, OCT. 08, 2003 20 MX26L6419 Read Configuration The device will support both asynchronous page mode and standard word reads. No configuration is required. Status register and identifier only support standard word single read operations. Table 16. Read Configuration Register Definition RM 15(A15) R 7 R 14 R 6 R 13 R 5 R 12 R 4 R R R R 11 10 9 8 R R R R 3 2 1 0 Notes Read mode configuration effects reads from the MTP array. Status register, query, and identifier reads support standard word read cycles. These bits are reserved for future use. Set these bits to "0". RCR.15 = READ MODE (RM) 0 = Standard Word Reads Enabled (Default) 1 = Page-Mode Reads Enabled RCR.14-0= RESERVED FOR FUTURE ENHANCEMENTS (R) P/N:PM0946 REV. 0.3, OCT. 08, 2003 21 MX26L6419 tion. To return to read array mode, write the Read Array command (FFH). Set Block Lock-Bit Commands This device provided the block lock-bits, to lock and unlock the individual block. To set the block lock-bit, the two cycle Set Block Lock-Bit command is requested. This command is invalid while the WSM is running. Writing the set block lock-bit command of 60H followed by confirm command and an appropriate block address. After the command is written, the device automatically outputs status register data when read. The CPU can detect the completion of the set lock-bit event by analyzing the status register bit SR.7. Also, reliable operations occur only when VCC and VPEN are valid. With VPEN _VPENLK , lock-bit contents are protected against alteration. Programming the Protection Register The protection register bits are programmed using the two-cycle Protection Program command. The 64-bit number is programmed 16 bits at a time for word-wide parts. First write the Protection Program Setup command, C0H. The next write to the device will latch in address and data and program the specified location. Any attempt to address Protection Program commands outside the defined protection register address space will result in a status register error. Attempting to program a locked protection register segment will result in a status register error. Clear Block Lock-Bits Command All set block lock-bits can clear by the Clear Block LockBits command. This command is invalid while the WSM is running. To Clear the block lock-bits, two cycle command is requested . The device automatically outputs status register data when read. The CPU can detect completion of the clear block lock-bits event by analyzing the status register bit SR.7. If a clear block lock-bits operation is aborted due to V PEN or V CC transitioning out of valid range, block lock-bit values are left in an undetermined state. A repeat of clear block lock-bits is required to initialize block lock-bit contents to known values. Locking the Protection Register The user-programmable segment of the protection register is lockable by programming Bit 1 of the PR-LOCK location to 0. Bit 0 of this location is programmed to 0 at the MXIC factory to protect the unique device number. Bit 1 is set using the Protection Program command to program "FFFD" to the PR-LOCK location. After these bits have been programmed, no further changes can be made to the values stored in the protection register. Protection Program commands to a locked section will result in a status register error. Protection register lockout state is not reversible. Protection Register Program Command VCC, VPEN, RESET--TRANSITIONS The device offer a 128-bit protection register to increase the security of a system design. The 128-bits protection register are divided into two 64-bit segments. One is programmed in the factory with a unique 64-bit number, which is unchangeable. The other one is left blank for customer designers to program as desired. Once the customer segment is programmed, it can be locked to prevent reprogramming. Block erase, program, and lock-bit configuration are not guaranteed if VPEN or VCC falls outside of the specified operating ranges, or RESET = VIH. If RESET transitions to VIL during block erase, program, or lock-bit configuration will remain low for a maximum time of tPLPH+tPHRH until the reset operation is complete. Then, the operation will abort and the device will enter reset/power-down mode. The aborted operation may leave data partially corrupted after programming, or partially altered after an erase or lock-bit configuration. Therefore, block erase and lockbit configuration commands must be repeated after normal operation is restored. Device power-off or RESET=VIL clears the Status Register. Reading the Protection Register The protection register is read in the identification read mode. The device is switched to this mode by writing the Read Identifier command 90H. Once in this mode, read cycles from addresses retrieve the specified informa- P/N:PM0946 REV. 0.3, OCT. 08, 2003 22 MX26L6419 The CUI latches commands issued by system software and is not altered by VPEN, CE transitions, or WSM actions. Its state is read array mode upon power-up, after exit from reset/power-down mode, or after VCC transitions below VLKO. VCC must be kept at or above VPEN during VCC transitions. After block erase, program, or lock-bit configuration, even after VPEN transitions down to VPENLK, the CUI must be placed in read array mode via the Read Array command if subsequent access to the memory array is desired. VPEN must be kept at or below VCC during VPEN transitions. Figure 3. Protection Register Memory Map Word Address A[21 - 0]: 64 Mbit 88H 4 Words User Programmed 85H 84H 4 Words Factory Programmed 81H 80H 1 Word Lock NOTE: The lowest order address line is A0. P/N:PM0946 REV. 0.3, OCT. 08, 2003 23 MX26L6419 Table 17. Word-Wide Protection Register Addressing Word Use A7 A6 A5 A4 A3 A2 A1 A0 LOCK Both 1 0 0 0 0 0 0 0 0 Factory 1 0 0 0 0 0 0 1 1 Factory 1 0 0 0 0 0 1 0 2 Factory 1 0 0 0 0 0 1 1 3 Factory 1 0 0 0 0 1 0 0 4 User 1 0 0 0 0 1 0 1 5 User 1 0 0 0 0 1 1 0 6 User 1 0 0 0 0 1 1 1 7 User 1 0 0 0 1 0 0 0 NOTE: 1. All address lines not specified in the above table must be 0 when accessing the Protection Register, i.e., A21-A8 = 0. P/N:PM0946 REV. 0.3, OCT. 08, 2003 24 MX26L6419 Figure 4. Write to Buffer Flowchart Start Command Cycle - Issue Write-to-Buffer Command - Address=Any address in block - Data=0xE8 Check Ready Status - Read Status Register Command not required - Perform read operation - Read Ready Status on signal D7 NO NO D7=1? Write to Buffer Time-Out ? YES YES Write Word Count - Address=Any address in block - Data=word count - Valid range=0x0 thru 0x1F Write Buffer Data - Fill write buffer up to word count - Address=Address(es) within buffer range - Data=Data to be written Confirm Cycle - Issue Confirm Command - Address=Any address in block - Data=0xD0 Read Status Register See Status Register Flowchart YES Any Errors? Error-Handler User-defined routine NO End P/N:PM0946 REV. 0.3, OCT. 08, 2003 25 MX26L6419 Figure 5. Status Register Flowchart Start Command Cycle - Issue Status Register Command - Address = any device address - Data = 0x70 Data Cycle - Read Status Register SR[7:0] SR7 = '1' No Y es - Set/Reset by WSM SR6 = '1' Y es Erase Suspend See Suspend/Resume Flowchart Y es Program Suspend See Suspend/Resume Flowchart No SR2 = '1' No SR5 = '1' Y es SR4 = '1' Y es Error Command Sequence No No Error Erase Failure Y es Error Program Failure Y es Error V PEN < VPENLK Y es Error Block Locked SR4 = '1' - Set by WSM - Reset by user - See Clear Status Register Command No SR3 = '1' No SR1 = '1' No End P/N:PM0946 REV. 0.3, OCT. 08, 2003 26 MX26L6419 Figure 6. Word Programming Flowchart Bus Command Comments Operation Write Setup Data=40H Word Program Addr=Location to Be Programmed Write Word Data=Data to Be Program Programmed Addr=Location to Be Programmed Read Status Register Data (Note 1) Standby Check SR.7 1=WSM Ready 0=WSM Busy 1. Toggling OE (low to high to low) updates the status register. This can be done in place of issuing the Read Status Register command. Repeat for subsequent programming operations. SR full status check can be done after each program operation, or after a sequence of programming operations. Write FFH after the last program operation to place device in read array mode. Start Write 40H, Address Write Data and Address Read Status Register SR.7= 0 1 Full Status Check if Desired Word Program Complete FULL STATUS CHECK PROCEDURE Bus Command Operation Standby Read Status Register Data (See Above) SR.3= 1 Check SR.3 1=Programming to Voltage Error Detect Standby Check SR.1 1=Device Protect Detect RP=VIH, Block Lock-Bit is Set Only required for systems Standby Check SR.4 1=Programming Error Toggling OE (low to high to low) updates the status register. This can be done in place of issuing the Read Status Register command. Repeat for subsequent programming operations. SR.4, SR.3, and SR.1 are only cleared by the Clear Status Register Command in cases where multiple location are programmed before full status is checked. If an error is detected, clear the status register before attempting retry or other error recovery. VPP Range Error 0 SR.1= 1 Device Protect Error 1 Programming Error 0 SR.4= Comments 0 Word Program Successful P/N:PM0946 REV. 0.3, OCT. 08, 2003 27 MX26L6419 Figure 7. Block Erase Flowchart Start Write 20H to Block Address Write Confirm D0H to Block Address Read Status Register SR.7=1 ? NO YES Full Status Check If Desired Erase MTP Block(s) Completed P/N:PM0946 REV. 0.3, OCT. 08, 2003 28 MX26L6419 Figure 8. Set Block Lock-Bit Flowchart Start Write 60H, Block Address Write 01H, Block Address Read Status Register NO SR.7=1 ? YES Full Status Check If Desired Set Lock-Bit Completed FULL STATUS CHECK PROCEDURE Read Status Register Data (See Above) NO SR.3=0 ? Voltage Range Error YES YES SR.4,5=1 ? Command Sequence Error NO NO SR.4=0 ? Set Lock-Bit Error YES Set Lock-Bit Successful P/N:PM0946 REV. 0.3, OCT. 08, 2003 29 MX26L6419 Figure 9. Clear Lock-Bit Flowchart Start Write 60H Write D0H Read Status Register NO SR.7=1 ? YES Full Status Check If Desired Set Lock-Bit Completed FULL STATUS CHECK PROCEDURE Read Status Register Data (See Above) NO SR.3=0 ? Voltage Range Error YES YES SR.4,5=1 ? Command Sequence Error NO NO SR.5=0 ? Clear Block Lock-Bits Error YES Clear Block Lock-Bit Successful P/N:PM0946 REV. 0.3, OCT. 08, 2003 30 MX26L6419 Figure 10. Protection Register Programming Flowchart Start Write C0H (Protection Reg. Program Setup) Write Protect. Register Address/Data Read Status Register NO SR.7=1 ? YES Full Status Check If Desired Program Completed FULL STATUS CHECK PROCEDURE Read Status Register Data (See Above) 1,1 SR.3, SR.4= SR.1, SR.4= SR.1, SR.4= VPEN Range Error 0,1 Protection Register Programming Error 1,1 Attempted Program to Locked Register-Aborted YES Program Successful P/N:PM0946 REV. 0.3, OCT. 08, 2003 31 MX26L6419 ABSOLUTE MAXIMUM RATINGS OPERATING RATINGS Storage Temperature Plastic Packages . . . . . . . . . . . . . ..... -65oC to +150oC Ambient Temperature with Power Applied. . . . . . . . . . . . . .... -65oC to +125oC Voltage with Respect to Ground VCC (Note 1) . . . . . . . . . . . . . . . . . -0.5 V to +4.0 V RESET (Note 2) . . . . . . . . . . . . . . -0.5 V to +12.5 V All other pins (Note 1) . . . . . . . -0.5 V to VCC +0.5 V ACC pin (Note 1, Note 4) . . . . . . . -0.5 V to +13.5 V Output Short Circuit Current (Note 3) . . . . . . 200 mA Commercial (C) Devices Ambient Temperature (TA ). . . . . . . . . . . . 0°C to +70°C VCC Supply Voltages VCC for full voltage range. . . . . . . . . . . +3.0 V to 3.6 V Operating ranges define those limits between which the functionality of the device is guaranteed. Notes: 1. Minimum DC voltage on input or I/O pins is -0.5 V. During voltage transitions, input or I/O pins may overshoot VSS to -2.0 V for periods of up to 20 ns. See Figure 6. Maximum DC voltage on input or I/O pins is VCC +0.5 V. During voltage transitions, input or I/O pins may overshoot to VCC +2.0 V for periods up to 20 ns. See Figure 7. 2. Minimum DC input voltage on pins RESET is -0.5 V. During voltage transitions, RESET may overshoot VSS to -2.0 V for periods of up to 20 ns. See Figure 6. 3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second. 4. ACC pin may be connected to 12V for a total of 80 hours maximum. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability. P/N:PM0946 REV. 0.3, OCT. 08, 2003 32 MX26L6419 DC Characteristics Symbol Parameter ILI Notes Typ Input and VPEN Load Current Max Unit ±1 uA Test Conditions VCC = VCC Max; VCCQ = VCCQ Max VIN = VCCQ or GND ILO Output Leakage Current ±10 uA VCC = VCC Max; VCCQ = VCCQ Max VIN = VCCQ or GND CMOS Inputs, VCC = VCC Max, ICC1 VCC Standby Current 1,2 25 80 uA Device is disabled (see table 1) RESET=VCCQ±0.2V 0.71 2 mA TTL Inputs, VCC=VCC max, Device is disable (see table 1), RESET=VIH ICC2 VCC Power-Down Current 25 80 uA RESET=GND±0.2V, CMOS Inputs, VCC=VCC Max, VCCQ=VCCQ Max 15 ICC3 VCC Page Mode Read Current 20 mA 2 Device is enabled (see Table 1) f=5MHz, IOUT=0mA CMOS Inputs, VCC=VCC Max, VCCQ=VCCQ Max 24 29 mA Device is enabled (see Table 1) f=33MHz, IOUT=0mA ICC5 ICC6 VCC Program or Set Lock-Bit 35 60 mA CMOS Inputs, VPEN=VCC Current 40 70 mA TTL Inputs, VPEN=VCC VCC Block Erase or Clear 35 70 mA CMOS Inputs, VPEN=VCC Block Lock-Bits Current 40 80 mA TTL Inputs, VPEN=VCC P/N:PM0946 REV. 0.3, OCT. 08, 2003 33 MX26L6419 DC Characteristics, Continued Symbol Parameter VIL Input Low Voltage VIH Input High Voltage VOL VOH Output Low Voltage Output High Voltage Notes 2 2 Min -0.5 2.0 2 2 VPENLK VPEN Lockout during Program, 2,3,4 Erase and Lock-Bit Operations VPENH VPEN during Block Erase, 3,4 Program, or Lock-Bit Operations VLKO VCC Lockout Voltage 5 Max 0.8 VCCQ+0.5 0.4 Unit V V V 0.2 V 0.85 x VCCQ VCCQ-0.2 3.0 2.2 V V 0.5xVCC V 3.6 V Test Conditions VCCQ=VCCQ2/3 Min IOL=2mA VCCQ=VCCQ2/3 Min IOL=100uA VCCQ=VCCQ Min IOH=-2.5mA VCCQ=VCCQ Min IOH=-100uA V NOTES: 1. CMOS inputs are either VCC ± 0.2 V or GND ± 0.2 V. TTL inputs are either VIL or VIH . 2. Sampled, not 100% tested. 3. Block erases, programming, and lock-bit configurations are inhibited when VPEN ˆ VPENLK , and not guaranteed in the range between VPENLK (max) and VPENH (min), and above VPENH (max). 4. Typically, VPEN is connected to VCC (3.0V - 3.6 V). 5. Block erases, programming, and lock-bit configurations are inhibited when VCC < VLKO , and not guaranteed in the range between VLKO (min) and VCC (min), and above VCC (max). P/N:PM0946 REV. 0.3, OCT. 08, 2003 34 MX26L6419 Figure 11. Transient Input/Output Reference Waveform for VCCQ=3.0V-3.6V VCCQ VCCQ/2 Output TEST POINTS Input VCCQ/2 0.0 Note:AC test inputs are driven at VCCQ for a Logic "1" and 0.0V for a Logic "0". Input timing being, and output timing ends, at VCCQ/2V (50% of VCCQ). Input rise and fall times (10% tp 90%)<5ns. Figure 12. Transient Equivalent Testing Load Circuit 1.3V 1N914 RL=3.3K ohm Device Under Test Out CL NOTE: CL Includes Jig Capacitance Test Configuration VCCQ = VCC = 3.0 V-3.6 V C L (pF) 30 P/N:PM0946 REV. 0.3, OCT. 08, 2003 35 MX26L6419 AC Characteristics --Read-Only Operations (1,2) Versions VCC 3.0V-3.6V(3) (All units in ns unless otherwise noted) VCCQ 3.0V-3.6V(3) Sym Parameter Notes tAVAV Read/Write Cycle Time tAVQV Address to Output Delay tELQV CEX to Output Delay tGLQV OE to Non-Array Output Delay tPHQV RESET High to Output Delay tELQX CEX to Output in Low Z 5 0 tGLQX OE to Output in Low Z 5 0 tEHQZ CEX High to Output in High Z 5 35 tGHQZ OE High to Output in High Z 5 15 tOH Output Hold from Address, CEX, or OE 5 0 5 0 Min Max 100 100 2 100 2, 4 50 180 Change, Whichever Occurs First tEHEL CEx High to CEx Low tAPA Page Address Access Time tGLQV OE to Array Output Delay 5, 6 25 4 25 NOTES: CEX low is defined as the first edge of CE that enables the device. CEX high is defined at the first edge of CE that disables the device (see Table 1). 1. See AC Input/Output Reference Waveforms for the maximum allowable input slew rate. 2. OE may be delayed up to tELQV - tGLQV after the first edge of CE that enables the device (see Table 1) without impact on tELQV . 3. See Figures 12-13, Transient Input/Output Reference Waveform for VCCQ = 3.0V - 3.6V and Transient Equivalent Testing Load Circuit for testing characteristics. 4. When reading the MTP array a faster tGLQV (R15) applies. Non-array reads refer to status register reads, query reads, or device identifier reads. 5. Sampled, not 100% tested. 6. For devices configured to standard word read mode, R14 (tAPA) will equal R1 (tAVQV). P/N:PM0946 REV. 0.3, OCT. 08, 2003 36 MX26L6419 Figure 13. AC Waveform for Both Page-Mode and Standard Word Read Operations VIH Address (A21-A2) VIL tAVAV Address VIH (A1-A0) VIL Valid Address Valid Address Valid Address Valid Address tEHEL Disable VIH CEx[E] Enable VIL tEHQZ tAVQV VIH OE [G] VIL tGHQZ tELQV VIH WE [W] tGLQV VIL tOH tAPA tPHQV tELQX DATA[D/Q] VOH Q0- Q15 VOL High Z Valid Output Valid Valid Output Output Valid Output High Z tGLQX VIH VCC VIL VIH RESET[P] VIL NOTE: 1. CEX low is defined as the first edge of CE that enables the device. CEX high is defined at the first edge of CE that disables the device (see Table 1). 2. For standard word read operations, tAPA will equal tAVQV. 3. When reading the MTP array a faster tGLQV applies. Non-array reads refer to status register reads, query reads, or device identifier reads. P/N:PM0946 REV. 0.3, OCT. 08, 2003 37 MX26L6419 AC Characteristics--Write Operations (1,2) Versions Valid for All Speeds Symbol Parameter tPHWL (tPHEL ) Unit Notes Min RESET High Recovery to WE(CEX) Going Low 3 210 ns tELWL (tWLEL ) CEX (WE) Low to WE(CEX) Going Low 4 0 ns tWP Write Pulse Width 4 70 ns tDVWH (tDVEH ) Data Setup to WE(CEX) Going High 5 50 ns tAVWH (tAVEH ) Address Setup to WE(CEX) Going High 5 55 ns tWHEH (tEHWH) CEX (WE) Hold from WE(CEX) High 0 ns tWHDX (tEHDX) Data Hold from WE(CEX) High 0 ns tWHAX (tEHAX) Address Hold from WE(CEX) High 0 ns tWPH Write Pulse Width High 6 30 ns tVPWH (tVPEH) VPEN Setup to WE(CEX) Going High 3 0 ns tWHGL (tEHGL) Write Recovery before Read 7 35 ns tQVVL VPEN Hold from Valid SRD 3,8 0 ns 4,8 64 75/85 us 4 0.5 2 sec tWHQV5 (tEHQV5) Set Lock-Bit Time tWHQV6 (tEHQV6) Clear Block Lock-Bits Time Max NOTES: CEX low is defined as the first edge of CE that enables the device. CEX high is defined at the first edge of CE that disables the device (see Table 1). 1. Read timing characteristics during block erase, program, and lock-bit configuration operations are the same as during read-only operations. Refer to AC Characteristics-Read-Only Operations. 2. A write operation can be initiated and terminated with either CE X or WE. 3. Sampled, not 100% tested. 4. Write pulse width (tWP) is defined from CEX or WE going low (whichever goes low last) to CEX or WE going high (whichever goes high first). Hence, tWP = tWLWH = tELEH = tWLEH = tELWH. 5. Refer to Table 3 for valid A IN and D IN for block erase, program, or lock-bit configuration. 6. Write pulse width high (t WPH) is defined from CEX or WE going high (whichever goes high first) to CEX or WE going low (whichever goes low first). Hence, tWPH = tWHWL = tEHEL = tWHEL = tEHWL . 7. For array access, tAVQV is required in addition to tWHGL for any accesses after a write. 8. VPEN should be held at VPENH until determination of block erase, program, or lock-bit configuration success (SR.1/3/4/5=0). P/N:PM0946 REV. 0.3, OCT. 08, 2003 38 MX26L6419 Figure 14. AC Waveform for Write Operations A B C AIN AIN D E F VIH Address (A) VIL tAVWH (tAVEH) Disable VIH tWHAX (tEHAX) CEx,(WE)[E(W)] Enable VIL tWHGL (tEHGL) tWHEH (tEHWH) tPHWL (tPHEL) VIH OE VIL tELWL (tWLEL) tWPH Disable VIH WE,(CEx)[W(E)] Enable VIL tWP tOVWH (tDVEH) tWHDX (tEHDX) VIH DATA[D/Q] VIL DIN DIN Valid SRD DIN VIH RESET [P] VIL tVPWH (tVPEH) tQVVL VPENH VPEN[V] VPENLK VIL NOTES: 1. CEX low is defined as the first edge of CE that enables the device. CEX high is defined at the first edge of CE that disables the device (see Table 1). a. VCC power-up and standby. b. Write block erase, write buffer, or program setup. c. Write block erase or write buffer confirm, or valid address and data. d. Automated erase delay. e. Read status register or query data. f. Write Read Array command. P/N:PM0946 REV. 0.3, OCT. 08, 2003 39 MX26L6419 Figure 15. AC Waveform for Reset Operation VIH RESET (P) VIL tPLPH Reset Specifications (1) Sym tPLPH Parameter Notes RESET Pulse Low Time 2 (If RESET is tied to VCC , this specification is not applicable) Min 35 Max Unit us NOTES: 1. These specifications are valid for all product versions (packages and speeds). 2. If RESET is asserted while a block erase, program, or lock-bit configuration operation is not executing then the minimum required RESET Pulse Low Time is 100ns. P/N:PM0946 REV. 0.3, OCT. 08, 2003 40 MX26L6419 ERASE AND PROGRAMMING PERFORMANCE(1) LIMITS PARAMETER MIN. TYP.(2) MAX. UNITS Block Erase Time 2.0 15.0 sec Write Buffer Byte Program Time 218 900 us Word Program Time (Using Word Program Command) 210 900 us Block Program Time (Using Write to Buffer Command) 0.8 2.4 sec (Time to Program 16 words) Block Erase/Program Cycles Note: 100 Cycles 1.Not 100% Tested, Excludes external system level over head. 2.Typical values measured at 25°C,3.3V. Additionally programming typically assume checkerboard pattern. LATCH-UP CHARACTERISTICS MIN. MAX. Input Voltage with respect to GND on OE -1.0V 12.5V Input Voltage with respect to GND on all power pins, Address pins, CE and WE -1.0V 2 VCCmax Input Voltage with respect to GND on all I/O pins -1.0V VCC + 1.0V -100mA +100mA Current Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at a time. CAPACITANCE °C, VCC=3.0V~3.6V TA=0° °C to 70° Parameter Symbol Parameter Description Test Set TYP MAX UNIT CIN Input Capacitance VIN=0 6 7.5 pF COUT Output Capacitance VOUT=0 8.5 12 pF CIN2 Control Pin Capacitance VIN=0 7.5 9 pF Notes: 1. Sampled, not 100% tested. 2. Test conditions TA=25°C, f=1.0MHz DATA RETENTION Parameter Test Conditions Min Unit Minimum Pattern Data Retention Time 150 10 Years 125 20 Years P/N:PM0946 REV. 0.3, OCT. 08, 2003 41 MX26L6419 ORDERING INFORMATION PLASTIC PACKAGE Part NO. Access Time Package type Cycles 48-TSOP 100 (ns) MX26L6419TC-10 100/25 P/N:PM0946 REV. 0.3, OCT. 08, 2003 42 MX26L6419 PACKAGE INFORMATION P/N:PM0946 REV. 0.3, OCT. 08, 2003 43 MX26L6419 REVISION HISTORY Revision No. Description 0.1 1. To modify Package Information 0.2 1. To remove deep power down mode: 1-1 power down mode:25uA(typ.) 1-2 tPHWL: 2us --> 210ns(min.) 2. To change VCC range: 2.7V to 3.6V --> 3.0 to 3.6V 0.3 Page Date P44 NOV/20/2002 P1,2,5,6,10 JUN/03/2003 P34,6 P39 P1,13,20,33, 35,36,37,42 3. To remove word mode read current P34 4. Revise the VPENLK spec from 2.2V(max.) to 0.5 x VCC(max.) P35 5. tWHQV6: 0.7s(max.)-->2s(max.) P39 6. To remove the DC Characteristics note "All currents are in RMS P35 unless otherwise noted" 7. To remove program/erase suspend/resume function P1,7,8,18,19,20,22 26,28,29,34,35,39,40 - CFI code of Address 36: 0A-->C8 P15 - CFI code of Address 3A: 01-->00 P15 8. Typing error P1,4,9,12,13,17,21,22 23~25, 37,38 1. Change write to buffer flowchart to align industry spec P25 OCT/08/2003 2. Added Figure 5. status register flowchart P26 3. To relax the maximum program time spec from 654us (write P41 buffer program) to 900us and from 630us(byte program time) to 900us 4. Latch-up: P41 a. Input max. voltage with respect to GND on OE from 13.5V to 12.5V b. Input max. voltage with respect to GND on power, address, CE, WE from 13.5V to 2xVCC max. c. test condition from VCC=5.0V to VCC=3V Capacitance: a. CIN from 8pF(max.) to 7.5pF(max.) b. COUT from 8pF(typ) to 8.5pF(typ) c. Add CIN2 P/N:PM0946 REV. 0.3, OCT. 08, 2003 44 MX26L6419 MACRONIX INTERNATIONAL CO., LTD. HEADQUARTERS: TEL:+886-3-578-6688 FAX:+886-3-563-2888 EUROPE OFFICE: TEL:+32-2-456-8020 FAX:+32-2-456-8021 JAPAN OFFICE: TEL:+81-44-246-9100 FAX:+81-44-246-9105 SINGAPORE OFFICE: TEL:+65-348-8385 FAX:+65-348-8096 TAIPEI OFFICE: TEL:+886-2-2509-3300 FAX:+886-2-2509-2200 MACRONIX AMERICA, INC. TEL:+1-408-453-8088 FAX:+1-408-453-8488 CHICAGO OFFICE: TEL:+1-847-963-1900 FAX:+1-847-963-1909 http : //www.macronix.com MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice.