NCV8461 Self Protected High Side Driver with Temperature Shutdown and Current Limit The NCV8461 is a fully protected High−Side driver that can be used to switch a wide variety of loads, such as bulbs, solenoids and other activators. The device is internally protected from an overload condition by an active current limit and thermal shutdown. A diagnostic output reports OFF state open load conditions as well as thermal shutdown. http://onsemi.com 8 1 SOIC−8 CASE 751 STYLE 11 Features • • • • • • • • • • • • Short Circuit Protection Thermal Shutdown with Automatic Restart CMOS (3 V / 5 V) Compatible Control Input Off State Open Load Detection Open Drain Diagnostic Output Overvoltage Protection Undervoltage Shutdown Loss of Ground and Loss of VD Protection ESD Protection Reverse Battery Protection (with external resistor) Very Low Standby Current AEC−Q100 Qualified MARKING DIAGRAM 8 1 NCV8461 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (*Note: Microdot may be in either location) Typical Applications • Switch a Variety of Resistive, Inductive and Capacitive Loads • Can Replace Electromechanical Relays and Discrete Circuits • Automotive / Industrial FEATURE SUMMARY Overvoltage Protection RDSon (max) TJ = 25°C NCV8461 AYWWG G VOV RON 41 V 350 mW Output Current Limit (typ) Ilim 1.2 A Operating Voltage Range VOP 5 − 34 V PIN CONNECTIONS GND 1 VD IN VD OUT VD STAT VD (Top View) ORDERING INFORMATION Device Package Shipping† NCV8461DR2G SOIC−8 (Pb−Free) 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2012 December, 2012 − Rev. 0 1 Publication Order Number: NCV8461/D NCV8461 VD Undervoltage Detection Short to Vd Detection Regulated Chargepump Output Clamping Input Buffer IN Pre Driver Control Logic Current Limitation STAT Overtemperature Detection ON−State Short Circuit Detection GND Off−State Open Load Detection Figure 1. Block Diagram SO8 PACKAGE PIN DESCRIPTION Pin # Symbol Description 1 GND 2 IN 3 OUT Output 4 STAT Status Output 5 VD Supply Voltage 6 VD Supply Voltage 7 VD Supply Voltage 8 VD Supply Voltage Ground Logic Level Input http://onsemi.com 2 í OUT NCV8461 Table 1. MAXIMUM RATINGS Value Rating DC Supply Voltage (Note 1) Peak Transient Input Voltage (Note 1) (Load Dump XX V, VD = 14 V, ISO7637−2 pulse5) Symbol Min Max Unit VD −16 40 V 60 V Vpeak Input Voltage Vin −10 16 V Input Current Iin −5 5 mA Iout − Internally Limited A Istatus −5 5 mA Output Current (Note 1) Status Current Power Dissipation Tc = 25°C (Note 1) Ptot Electrostatic Discharge (Note 1) (HBM Model 100 pF / 1500 W) Input Status Output VD 1.5 W DC kV kV kV kV 4 4 5 5 Single Pulse Inductive Load Switching Energy (Note 1) VD = 13.5 V; IL = 0.5 A, TJstart = 150°C EAS − 300 mJ TJ −40 +150 °C Tstorage −55 +150 °C Operating Junction Temperature Storage Temperature Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Not subjected to production testing Table 2. THERMAL RESISTANCE RATINGS Parameter Thermal Resistance (Note 2) Junction−to−Lead Junction−to−Ambient (6 cm square pad size, FR−4, 2 oz Cu) Symbol Max. Value RthJL RthJA 31 84 2. Reverse Output current has to be limited by the load to stay within absolute maximum ratings and thermal performance. http://onsemi.com 3 Units °C/W NCV8461 Table 3. ELECTRICAL CHARACTERISTICS (VD = 13.5 V; −40°C < TJ < 150°C unless otherwise specified) Value Symbol Rating Operating Supply Voltage VD Undervoltage Shutdown VUV Undervoltage Restart Conditions Min Typ Max Unit 5 − 34 V 5 V 5.5 V VUV_Res Overvoltage Protection VOV ID = 4 mA On Resistance RON Iout = 0.3 A; 6 V < VD < 40 V, TJ = 25°C Iout = 0.3 A; 6 V < VD < 40 V, TJ = 150°C 250 450 350 700 mW ID Off State, Vin = Vout = 0 V On State; Vin = 5 V, Iout = 0 A 13 1 35 1.7 mA mA IL(off) 12 mA Input Voltage − Low Vin_low 0.8 V Input Voltage − High Vin_high Standby Current Output Leakage Current 41 V INPUT CHARACTERISTICS Input Hysteresis Voltage 2.2 Vhyst V 0.3 V Off State Input Current Iin_OFF Vin = 0.7 V 1 10 mA On State Input Current Iin_ON Vin = 5.0 V 1 10 mA Input Resistance (Note 3) RI Input Clamp Voltage Vin_cl Iin = 1 mA Iin = −1 mA Turn−On Delay Time td_on Turn−Off Delay Time td_off Slew Rate On Slew Rate Off 1.5 3.5 14 −18 16 −16 KW 18 −14 V to 90% Vout, RL = 47 W 140 ms to 10% Vout, RL = 47 W 170 ms dVout/dton 10% to 30% Vout, RL = 47 W 2 V / ms dVout/dtoff 70% to 40% Vout, RL = 47 W 2 V / ms Reverse Battery −VD Requires a 150 W Resistor in GND Connection 32 V Forward Voltage VF TJ = 150°C Vstat_low Istat = 1.6 mA, TJ = −40°C to 25°C Istat = 1.6 mA, TJ = 150°C (Note 3) 0.4 0.6 V Istat_leakage Vstat = 5 V 10 mA 700 ms SWITCHING CHARACTERISTICS REVERSE BATTERY (Note 3) 0.6 V STATUS PIN CHARACTERISTICS Status Output Voltage Low Status Leakage Current Status Invalid Time After Positive Input Slope Td(STAT) Status Clamp Voltage Vstat_cl 300 Istat = 1 mA Istat = −1 mA 10 −1.4 V PROTECTION FUNCTIONS (Note 4) Temperature Shutdown (Note 3) TSD Temperature Shutdown Hysteresis (Note 3) TSD_hyst Output Current Limit Initial Peak Ilim 150 175 200 10 TJ = −40°C, VD = 20 V (Note 3) TJ = 25°C TJ = 150°C (Note 3) 0.7 1.2 °C °C 2 A 3. Not subjected to production testing 4. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be used together with a proper hardware/software strategy. If the devices operates under abnormal conditions this hardware/software solutions must limit the duration and number of activation cycles. http://onsemi.com 4 NCV8461 Table 3. ELECTRICAL CHARACTERISTICS (VD = 13.5 V; −40°C < TJ < 150°C unless otherwise specified) Value Rating Min Symbol Conditions Repetitive Short Circuit Current Limit Ilim(SC) TJ = TJt (Note 3) Switch Off Output Clamp Voltage Vclamp ID = 4 mA, Vin = 0 V Typ Max Unit PROTECTION FUNCTIONS (Note 4) VD − 41 1 A VD − 47 V 2.8 V DIAGNOSTICS CHARACTERISTICS Short Circuit Detection Voltage VOUT(SC) Openload Off State Detection Threshold VOL Openload Detection Current IL(OL) Vin = 0 V 1.5 3.5 5 V mA 3. Not subjected to production testing 4. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be used together with a proper hardware/software strategy. If the devices operates under abnormal conditions this hardware/software solutions must limit the duration and number of activation cycles. Table 4. STATUS PIN TRUTH TABLE Conditions Input Output Status Normal Operation L H L H H H Short Circuit to GND L H L L* H L Short to VD (OFF State) L H H H L H Current Limitation L H L H** H H Overtemperature L H L L H L OFF State Open Load L H H H L H * Output = “L”; VOUT < 2 V typ. ** Output = “H”; VOUT > 2 V typ. TYPICAL PERFORMANCE CHARACTERISTICS 1000 ENERGY (mJ) CURRENT (A) 10 TJStart = 25°C 1 TJStart = 150°C 100 TJStart = 25°C TJStart = 150°C 0.1 100 1000 10 10 100 1000 INDUCTANCE (mH) INDUCTANCE (mH) Figure 2. Maximum Single Pulse Switch Off Current vs. Inductance Figure 3. Maximum Single Pulse Switch Off Energy vs. Inductance http://onsemi.com 5 NCV8461 TYPICAL PERFORMANCE CHARACTERISTICS 600 600 550 550 500 450 125°C 400 RDS(on) (mW) RDS(on) (mW) 500 150°C 450 350 300 25°C 250 −40°C VDS = 13.5 V 0 10 20 30 150 100 −40 −20 40 0 20 40 60 80 100 120 Vbat (V) TEMPERATURE (°C) Figure 4. RDS(on) Over Temp and Battery Figure 5. RDS(on) vs. Temperature 0.80 0.75 0.75 0.70 0.70 SLEW RATE (V/ms) SLEW RATE (V/ms) 300 250 0.65 0.60 0.55 VDS = 13.5 V Rload = 47 W 0.50 0.40 −40 −20 0 20 40 60 80 100 120 0.60 0.55 0.50 VDS = 13.5 V Rload = 47 W 0.40 −40 −20 140 140 0.65 0.45 0.45 0 20 40 60 80 100 120 TEMPERATURE (°C) TEMPERATURE (°C) Figure 6. Slew Rate On vs. Temperature Figure 7. Slew Rate Off vs. Temperature 140 2.0 1.0 0.9 1.8 0.8 1.6 0.7 1.4 CURRENT (A) GROUND CURRENT (mA) 350 200 200 150 100 400 0.6 0.5 0.4 0.3 0.2 VDS = 13.5 V 0.1 0 −40 −20 0 20 40 60 80 100 120 1.2 1.0 0.8 0.6 VDS = 13.5 V 0.4 0.2 0 −40 −20 140 0 20 40 60 80 100 120 TEMPERATURE (°C) TEMPERATURE (°C) Figure 8. On State Ground Current vs. Temp Figure 9. Current Limit vs. Temperature http://onsemi.com 6 140 NCV8461 PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AK −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 0.25 (0.010) M Y M 1 4 −Y− K G C N DIM A B C D G H J K M N S X 45 _ SEATING PLANE −Z− 0.10 (0.004) H D 0.25 (0.010) M Z Y S X M J S INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 STYLE 11: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. DRAIN 2 7. DRAIN 1 8. DRAIN 1 SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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