Data Sheet NE3516S02 N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain R09DS0038EJ0100 Rev.1.00 Apr 18, 2012 FEATURES • Low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 14 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 6 mA (Reference Value) • 4-pin Micro-X plastic (S02) package APPLICATIONS • X to Ku band DBS LNB • Other Ku band communication system ORDERING INFORMATION Part Number Order Number NE3516S02-T1C NE3516S02-T1C-A NE3516S02-T1D NE3516S02-T1D-A Remark Package Quantity Marking S02 package (Pb-Free) 2 kpcs/reel P Supplying Form • 8 mm wide embossed taping • Pin 4 (Gate) faces the perforation side of the tape 10 kpcs/reel To order evaluation samples, please contact your nearby sales office. Part number for sample order: NE3516S02 ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified) Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Note Channel Temperature Storage Temperature Note: Symbol VDS VGS ID IG Ptot Tch Tstg Ratings 4.0 –3.0 IDSS 100 165 +125 –65 to +125 Unit V V mA μA mW °C °C Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified) Parameter Drain to Source Voltage Drain Current Input Power Symbol VDS ID Pin MIN. +1 5 – TYP. +2 10 – MAX. +3 15 0 Unit V mA dBm CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. R09DS0038EJ0100 Rev.1.00 Apr 18, 2012 Page 1 of 8 NE3516S02 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) Parameter Gate to Source Leak Current Saturated Drain Current Gate to Source Cut-off Voltage Transconductance Noise Figure Associated Gain Symbol IGSO IDSS VGS(off) gm NF Ga Test Conditions VGS = −3.0 V VDS = 2 V, VGS = 0 V VDS = 2V, ID = 100 μA VDS = 2 V, ID = 10 mA VDS = 2 V, ID = 10 mA, f = 12 GHz MIN. − 15 −0.2 55 − 13 TYP. 0.5 30 −0.5 65 0.35 14 MAX. 10 60 −1.3 − 0.50 − Unit μA mA V mS dB dB STANDARD CHARACTERISTICS FOR REFERENCE (TA = +25°C, unless otherwise specified) Parameter Noise Figure Associated Gain R09DS0038EJ0100 Rev.1.00 Apr 18, 2012 Symbol NF Ga Test Conditions VDS = 2 V, ID = 6 mA, f = 12 GHz Reference Value 0.35 13.5 Unit dB dB Page 2 of 8 NE3516S02 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 60 VDS = 2 V Mounted on Glass Eploxy PCB (1.08 cm2 × 1.0 mm (t) ) 50 Drain Current ID (mA) 200 165 150 100 50 0 0 50 100 150 200 30 20 0 –0.8 250 –0.6 –0.4 –0.2 0 Ambient Temperature TA (°C) Gate to Source Voltage VGS (V) MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN CURRENT DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 1.2 1.1 60 16 f = 12 GHz VDS = 2 V 15 Ga 1.0 14 0.9 13 0.8 12 0.7 11 0.6 10 0.5 9 0.4 8 NFmin 0.3 7 0.2 2 6 4 6 8 10 12 Drain Current ID (mA) 50 Drain Current ID (mA) Minimum Noise Figure NFmin (dB) 40 10 Associated Gain Ga (dB) Total Power Dissipation Ptot (mW) 250 40 VGS = 0 V 30 –0.1 V 20 –0.2 V –0.3 V 10 –0.4 V 0 0.00 1.00 2.00 3.00 4.00 Drain to Source Voltage VDS (V) Remark The graph indicates nominal characteristics. R09DS0038EJ0100 Rev.1.00 Apr 18, 2012 Page 3 of 8 NE3516S02 S-PARAMETERS S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import to microwave circuit simulators without keyboard inputs. Click here to download S-parameters. [Products] → [RF Devices] → [Device Parameters] URL http://www.renesas.com/products/microwave/download/parameter/ R09DS0038EJ0100 Rev.1.00 Apr 18, 2012 Page 4 of 8 NE3516S02 RF MEASURING LAYOUT PATTERN (REFERENCE ONLY) (UNIT: mm) 2.80 2.60 2.06 0.64 13.0 0.54 0.74 2.06 1.7 mm/R.P. 2.6 Reference Plane (Calibration Plane) 1.7 1.7 Reference Plane (Calibration Plane) φ 0.3 TH L2–uX Ver. 1 6.0 RT/duroid 5880/ROGERS t = 0.254 mm εr = 2.20 tan delta = 0.0009 @10 GHz R09DS0038EJ0100 Rev.1.00 Apr 18, 2012 Page 5 of 8 NE3516S02 PACKAGE DIMENSIONS S02 (UNIT: mm) (Top View) (Bottom View) 3.2±0.2 0.65 TYP. 2.2±0.2 1 2.2±0.2 0.5 TYP. 2.6±0.1 1 P 2 4 4 2 3 3 (Side View) 2.2±0.2 0.15±0.05 1.5 MAX. 1.7 3.2±0.2 PIN CONNECTIONS 1. 2. 3. 4. R09DS0038EJ0100 Rev.1.00 Apr 18, 2012 Source Drain Source Gate Page 6 of 8 NE3516S02 RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Partial Heating Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2% (Wt.) or below Peak temperature (terminal temperature) : 350°C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below Condition Symbol IR260 HS350 CAUTION Do not use different soldering methods together (except for partial heating). R09DS0038EJ0100 Rev.1.00 Apr 18, 2012 Page 7 of 8 NE3516S02 Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth. 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