C-BAND MEDIUM POWER GaAs MESFET NE850R599A OUTLINE DIMENSIONS (Units in mm) FEATURES • HIGH OUTPUT POWER: 0.5 W PACKAGE OUTLINE 99 • HIGH LINEAR GAIN: 9.5 dB 5.2±0.3 • HIGH EFFICIENCY (PAE): 38% 1.0±0.1 • SUPERIOR INTERMODULATION DISTORTION 4.0 MIN BOTH LEADS Gate • INDUSTRY STANDARD PACKAGING φ2.2±0.2 4.3±0.2 4.0±0.1 DESCRIPTION Source The NE850R599A is a medium power GaAs MESFET designed for up to a 1/2W output stage or as a driver for higher power devices. The device has no internal matching and can be used at frequencies from UHF to 8.5 GHZ. Equivalent performance in a chip package can be obtained by using only 1 cell of the NE8500100 chip. The chips used in this series offer superior reliability and consistent performance for which NEC microwave semiconductors are known. Drain 0.6±0.1 5.2±0.3 11.0±0.15 15.0±0.3 +.06 0.1 -.02 0.2 MAX 5.0 MAX 1.7±0.15 6.0±0.2 1.2 RECOMMENDED OPERATING LIMITS SYMBOLS PARAMETERS VDS Drain to Source Voltage V TCH Channel Temperature °C 130 Gain Compression dB 3.0 Gate Resistance KΩ 1 GCOMP RG UNITS MIN TYP MAX 9 ELECTRICAL CHARACTERISTICS (TC 10 = 25°C) PART NUMBER NE850R599A PACKAGE OUTLINE Electrical Characteristics Functional Characteristics SYMBOLS CHARACTERISTICS 99 UNITS MIN TYP MAX TEST CONDITIONS dBm 25.5 26.5 PIN = 18.5 dBm1 POUT Power Out at Fixed Input Power ηADD Power Added Efficiency % 38 VDS = 10 V; IDSQ = 100 mA IDS Drain Source Current A 140 f = 7.2 GHz; RG = 1 KΩ IGS Gate to Source Current mA GL Linear Gain dB Saturated Drain Current mA 220 430 VDS = 2.5 V; VGS = 0 V V -3.0 -1.0 VDS = 2.5 V; IDS = 2 mA IDSS VP Pinch-off Voltage gm Transconductance RTH Thermal Resistance (channel to case) mS °C/W -1.6 1.6 PIN = 7 dBm2 9.5 150 VDS = 2.5 V; IDS = IDSS 60 California Eastern Laboratories NE850R599A ABSOLUTE MAXIMUM RATINGS1 TYPICAL PERFORMANCE CURVES (TA = 25˚C) (TC= 25 °C unless otherwise noted) PARAMETERS UNITS OUTPUT POWER vs. INPUT POWER RATINGS VDSX Drain to Source Voltage V 15 VGDX Gate to Drain Voltage V -18 VGSX Gate to Source Voltage V -12 IDSS Drain Current mA IGS Gate Current mA 3.0 PT Total Power Dissipation W 3.0 TCH Channel Temperature °C 175 TSTG Storage Temperature °C -65 to +175 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 30 POUT 25 ID 20 140 120 100 ID (mA) IDS VD = 10 V, f = 7.2 GHz ID = 100 mA set Rg = 1KΩ Output Power, POUT (dBm) SYMBOLS 15 10 15 20 Input Power, PIN (dBm) EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 01/14/2000 DATA SUBJECT TO CHANGE WITHOUT NOTICE