NSB9435T1 Preferred Device High Current Bias Resistor Transistor PNP Silicon • Collector –Emitter Sustaining Voltage – http://onsemi.com VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain – POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE(sat) = 0.275 VOLTS hFE = 125 (Min) @ IC = 0.8 Adc = 90 (Min) @ IC = 3.0 Adc • Low Collector –Emitter Saturation Voltage – • • VCE(sat) = 0.275 Vdc (Max) @ IC = 1.2 Adc = 0.55 Vdc (Max) @ IC = 3.0 Adc SOT–223 Surface Mount Packaging ESD Rating – Human Body Model: Class 1B ESD Rating – Machine Model: Class B COLLECTOR 2,4 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) ÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏ Rating BASE 1 Symbol Value Unit VCEO 30 Vdc Collector–Base Voltage VCB 45 Vdc Emitter–Base Voltage VEB ±6.0 Vdc Base Current – Continuous IB 1.0 Adc Collector Current – Continuous Collector Current – Peak IC 3.0 5.0 Adc Total Power Dissipation @ TC = 25C Derate above 25C Total PD @ TA = 25C mounted on 1″ sq. (645 sq. mm) Collector pad on FR–4 bd material Total PD @ TA = 25C mounted on 0.012″ sq. (7.6 sq. mm) Collector pad on FR–4 bd material PD 3.0 24 1.56 Watts mW/C Watts SOT–223 CASE 318E STYLE 1 0.72 Watts MARKING DIAGRAM TJ, Tstg –55 to +150 C 9435R Characteristic Symbol Max Unit Thermal Resistance – Junction to Case – Junction to Ambient on 1″ sq. (645 sq. mm) Collector pad on FR–4 board material – Junction to Ambient on 0.012″ sq. (7.6 sq. mm) Collector pad on FR–4 board material RθJC RθJA 42 80 C/W RθJA 174 Collector–Emitter Voltage Operating and Storage Junction Temperature Range EMITTER 3 4 1 3 THERMAL CHARACTERISTICS Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds Semiconductor Components Industries, LLC, 2002 April, 2002 – Rev. 2 TL C 260 1 2 9435R = Device Code ORDERING INFORMATION Device NSB9435T1 Package Shipping SOT–223 1000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Publication Order Number: NSB9435T1/D NSB9435T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristics Symbol Min Typ Max 30 – – 6.0 – – – – – – 20 200 – – 700 – – – 0.155 – – 0.210 0.275 0.550 – – 1.25 – – 1.10 125 110 90 220 – – – – – 7.5 10 12.5 – 100 150 – 135 – – 110 – Unit ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏ ÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏÏ ÏÏÏÏÏ ÏÏÏ OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 10 mAdc, IB = 0 Adc) VCEO(sus) Emitter–Base Voltage (IE = 50 Adc, IC = 0 Adc) VEBO Collector Cutoff Current (VCE = 25 Vdc) (VCE = 25 Vdc, TJ = 125°C) ICER Emitter Cutoff Current (VBE = 5.0 Vdc) IEBO Vdc Vdc µAdc Adc ON CHARACTERISTICS (Note 1) Collector–Emitter Saturation Voltage (IC = 0.8 Adc, IB = 20 mAdc) (IC = 1.2 Adc, IB = 20 mAdc) (IC = 3.0 Adc, IB = 0.3 Adc) VCE(sat) Base–Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.3 Adc) VBE(sat) Base–Emitter On Voltage (IC = 1.2 Adc, VCE = 4.0 Vdc) VBE(on) DC Current Gain (IC = 0.8 Adc, VCE = 1.0 Vdc) (IC = 1.2 Adc, VCE = 1.0 Vdc) (IC = 3.0 Adc, VCE = 1.0 Vdc) hFE Resistor R1 Vdc Vdc Vdc – k DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0 Adc, f = 1.0 MHz) Cob Input Capacitance (VEB = 8.0 Vdc) Cib Current–Gain – Bandwidth Product (Note 2) (IC = 500 mA, VCE = 10 V, Ftest = 1.0 MHz) fT 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2. fT = |hFE| ftest http://onsemi.com 2 pF pF MHz NSB9435T1 1000 0.25 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR–EMITTER SATURATION VOLTAGE (V) 0.3 IC = 3.0 A 0.2 0.15 TA = 150°C 25°C 100 0.1 1.2 A 0.8 A 0.05 0.5 A 0.25 A 0 0.001 0.01 –55°C VCE = 1.0 V 10 0.1 0.1 1 IB, BASE CURRENT (mA) 10 IC, COLLECTOR CURRENT (A) Figure 1. Collector Saturation Region Figure 2. DC Current Gain 1000 10 TA = 150°C V, VOLTAGE (V) hFE, DC CURRENT GAIN 1 25°C 100 –55°C VBE(sat) 1 VCE(sat) 0.1 VCE = 4.0 V IC/IB = 10 10 0.01 0.1 1 10 1.0E–01 IC, COLLECTOR CURRENT (A) 1.0E+00 1.0E+01 IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain Figure 4. “ON” Voltages 1.0E+00 1.2 VBE(sat) V, VOLTAGE (V) V, VOLTAGE (V) 1 VCE(sat) 1.0E–01 –55°C 0.8 25°C 0.6 TA = 155°C 0.4 0.2 IC/IB = 50 1.0E–02 0 1.0E–01 1.0E+00 1.0E+01 0.1 IC, COLLECTOR CURRENT (A) 1 IC, COLLECTOR CURRENT (A) Figure 5. “ON” Voltages Figure 6. VBE(on) Voltage http://onsemi.com 3 10 NSB9435T1 10 IC, COLLECTOR CURRENT (A) Cob, OUTPUT CAPACITANCE (pF) 1000 100 10 f = 1 MHz TA = 25°C 1 100 ms 0.1 0.01 BONDING WIRE LIMIT THERMAL LIMIT (Single Pulse) SECONDARY BREAKDOWN LIMIT 0.001 0.1 10 1 100 0.1 10 100 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 7. Output Capacitance Figure 8. Active Region Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and secondary breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 8 is based on TJ(pk) = 150C; TC is variable depending on conditions. Secondary breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 10. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. 3.0 TC 2.0 1.0 TA 0 25 1.0 VR, REVERSE VOLTAGE (V) 4.0 PD, POWER DISSIPATION (WATTS) 0.5 ms 5.0 ms 1.0 50 75 100 125 150 T, TEMPERATURE (°C) r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 9. Power Derating 1.0 D = 0.5 0.1 0.01 0.2 0.1 0.05 0.02 0.01 RθJA(t) = r(t) θJA θJA = 174°C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TA = P(pk) θJA(t) SINGLE PULSE 0.001 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.0001 0.0001 0.001 0.01 1.0 0.1 t, TIME (seconds) Figure 10. Thermal Response http://onsemi.com 4 10 100 1000 NSB9435T1 PACKAGE DIMENSIONS SOT–223 (TO–261) PLASTIC PACKAGE CASE 318E–04 ISSUE K A F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 S 1 2 3 B D L G J C 0.08 (0003) H M K http://onsemi.com 5 INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0 10 S 0.264 0.287 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0 10 6.70 7.30 NSB9435T1 Notes http://onsemi.com 6 NSB9435T1 Notes http://onsemi.com 7 NSB9435T1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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