ONSEMI MMJT350T1

MMJT350T1
Bipolar Power Transistors
PNP Silicon
. . . designed for use in line−operated applications such as low
power, line−operated series pass and switching regulators requiring
PNP capability.
• High Collector−Emitter Sustaining Voltage −
VCEO(sus) = 300 Vdc @ IC
= 1.0 mAdc
• Excellent DC Current Gain −
hFE = 30 −240 @ IC
= 50 mAdc
• Epoxy Meets UL94, V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B; > 8000 V
Machine Model, C; > 400 V
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0.5 AMPERE
POWER TRANSISTOR
PNP SILICON
300 VOLTS
2.75 WATTS
C 2,4
B1
E3
Schematic
MARKING
DIAGRAM
AYM
T350
SOT−223
CASE 318E
Style 1
T350
A
Y
M
= Specific Device Code
= Assembly Location
= Last Digit of Year
= Month Code
4
C
B
C
E
1
2
3
Top View Pinout
ORDERING INFORMATION
Device
MMJT350T1
 Semiconductor Components Industries, LLC, 2003
October, 2003 − Rev. 1
1
Package
Shipping
SOT−223
1000 / Tape &
Reel
Publication Order Number:
MMJT350T1/D
MMJT350T1
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MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
VCEO
300
Vdc
Collector−Base Voltage
VCB
300
Vdc
Emitter−Base Voltage
VEB
3.0
Vdc
IC
0.5
0.75
Adc
PD
2.75
22
1.40
0.65
W
mW/°C
W
W
TJ, Tstg
– 55 to
+ 150
°C
Symbol
Max
Unit
Thermal Resistance − Junction to Case
− Junction−to−Ambient on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material
− Junction−to−Ambient on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material
RJC
RJA
RJA
45
85
190
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 5 seconds
TL
260
°C
Collector−Emitter Voltage
Collector Current
− Continuous
− Peak
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Total PD @ TA = 25°C mounted on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material
Total PD @ TA = 25°C mounted on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
VCEO(SUS)
300
−
Vdc
Collector−Base Current
(VCB = Rated VCBO, VEB = 0)
ICBO
−
100
Adc
Emitter Cut−off Current
( VBE = 5.0 Vdc)
IEBO
−
100
Adc
30
20
240
−
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 1.0 mAdc, IB = 0 Adc)
ON CHARACTERISTICS (Note )
DC Current Gain
(IC = 50 mAdc, VCE = 10 Vdc)
(IC = 100 mAdc, VCE = 10 Vdc)
hFE
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2
−
MMJT350T1
hFE , DC CURRENT GAIN
100
1.0
TJ = 150°C
TJ = 25°C
0.8
25°C
V, VOLTAGE (VOLTS)
200
70
50
−55 °C
30
20
VCE = 2.0 V
VCC = 10 V
10
5.0 7.0 10
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 10 V
0.4
IC/IB = 10
0.2
VCE(sat)
200
20 30
50 70 100
IC, COLLECTOR CURRENT (mA)
300
0
500
5.0 7.0
IC/IB = 5.0
10
20 30
50 70 100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1000
700
500
300
100s
dc
200
100
70
50
30
20
10
20
500
Figure 2. “On” Voltages
1.0ms
500s
TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
SECOND BREAKDOWN LIMITED
θV, TEMPERATURE COEFFICIENTS (mV/°C)
Figure 1. DC Current Gain
200 300
50
100
200
30
70
300 400
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
+1.2
+0.8
*APPLIES FOR IC/IB < hFE/4
+0.4
0
*VC for VCE(sat)
−0.4
+100 °C to +150°C
+25 °C to +100°C
−55 °C to +25°C
−0.8
+25 °C to +150°C
−1.2
−1.6
VB for VBE
−2.0
−55 °C to +25°C
−2.4
−2.8
5.0 7.0
Figure 3. Active−Region Safe Operating Area
10
20 30
50 70 100
IC, COLLECTOR CURRENT (mA)
200 300
500
Figure 4. Temperature Coefficients
4.0
PD , POWER DISSIPATION (WATTS)
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 3 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150°C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
3.0
TC
2.0
1.0
TA
0
25
50
75
100
T, TEMPERATURE (°C)
Figure 5. Power Derating
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3
125
150
MMJT350T1
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE K
A
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
S
1
2
3
B
D
L
G
J
C
0.08 (0003)
H
M
K
INCHES
DIM MIN
MAX
A
0.249
0.263
B
0.130
0.145
C
0.060
0.068
D
0.024
0.035
F
0.115
0.126
G
0.087
0.094
H 0.0008 0.0040
J
0.009
0.014
K
0.060
0.078
L
0.033
0.041
M
0
10 S
0.264
0.287
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
6.30
6.70
3.30
3.70
1.50
1.75
0.60
0.89
2.90
3.20
2.20
2.40
0.020
0.100
0.24
0.35
1.50
2.00
0.85
1.05
0
10 6.70
7.30
BASE
COLLECTOR
EMITTER
COLLECTOR
ON Semiconductor and
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MMJT350T1/D