Transistors 2SB0642 (2SB642) Silicon PNP epitaxial planar type For low-power general amplification Unit: mm 2.5±0.1 (1.0) R 0.9 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −60 V Collector-emitter voltage (Base open) VCEO −50 V Emitter-base voltage (Collector open) VEBO −7 V Collector current IC −100 mA Peak collector current ICP −200 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C (0.85) 0.45±0.05 0.55±0.1 3 2 (2.5) 1.25±0.05 Parameter 4.1±0.2 2.0±0.2 R 0.7 4.5±0.1 3.5±0.1 (1.5) 1.0±0.1 ■ Absolute Maximum Ratings Ta = 25°C (1.0) (1.5) 2.4±0.2 • High forward current transfer ratio hFE • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (0.4) 6.9±0.1 ■ Features 1 1: Base 2: Collector 3: Emitter M-A1 Package (2.5) ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −60 V Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −50 V Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −7 Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = −20 V, IB = 0 Forward current transfer ratio * hFE VCE = −10 V, IC = −2 mA Collector-emitter saturation voltage Transition frequency VCE(sat) fT Collector output capacitance (Common-emitter reverse transfer) Cob Conditions Min Typ Max Unit V 160 IC = −100 mA, IB = −10 mA −1 µA −1 µA 460 −1 V VCB = −10 V, IE = 2 mA, f = 200 MHz 80 MHz VCB = −10 V, IE = 0, f = 1 MHz 3.5 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R S hFE1 160 to 260 210 to 340 290 to 460 Note) The part number in the parenthesis shows conventional part number. Publication date: January 2003 SJC00045BED 1 2SB0642 PC Ta IC VCE Ta = 25°C 200 100 −250 µA −40 −200 µA −30 −150 µA −20 −100 µA −10 20 40 60 0 80 100 120 140 160 −4 0 Ambient temperature Ta (°C) −8 −240 Collector current IC (mA) Base current IB (µA) −250 −200 25°C Ta = 75°C −150 −100 − 1.2 −80 0 Base-emitter voltage VBE (V) − 0.4 − 0.8 Transition frequency fT (MHz) 500 300 −1.2 −1.6 Ta = 75°C 25°C −25°C 200 100 −10 −100 Collector current IC (mA) 2 −25°C −1 000 120 100 80 60 40 1 −100 −1 000 Cob VCB VCB = −10 V Ta = 25°C 0 0.1 −10 Collector current IC (mA) 20 0 −1 Ta = 75°C 25°C − 0.001 −1 −2.0 Collector output capacitance C (pF) (Common base, input open circuited) ob VCE = −10 V IC / IB = 10 −1 fT I E 160 140 400 −10 Base-emitter voltage VBE (V) hFE IC 600 −450 − 0.01 0 −1.8 −300 Base current IB (µA) − 0.1 −40 −50 Forward current transfer ratio hFE −25°C −120 − 0.6 −150 0 VCE(sat) IC −160 0 0 −20 VCE = −5 V −200 −300 0 −20 IC VBE VCE = −5 V Ta = 25°C −350 −16 −30 Collector-emitter voltage VCE (V) IB VBE −400 −12 −40 −10 −50 µA Collector-emitter saturation voltage VCE(sat) (V) 0 VCE = −5 V Ta = 25°C −50 Collector current IC (mA) Collector current IC (mA) Collector power dissipation PC (mW) 300 −60 IB = −300 µA −50 400 0 IC I B −60 500 10 Emitter current IE (mA) SJC00045BED 100 8 IE = 0 f = 1 MHz Ta = 25°C 7 6 5 4 3 2 1 0 −1 −10 −100 Collector-base voltage VCB (V) 2SB0642 NF IE IC = −1 mA f = 10.7 MHz Ta = 25°C 3 2 16 4 3 2 14 12 f = 100 Hz 10 1 kHz 8 10 kHz 6 4 1 1 2 0 −5 −10 −15 −20 −25 0 0.01 −30 0.1 1 Collector to emitter voltage VCE (V) Emitter current IE (mA) h Parameter IE h Parameter VCE hfe VCE = −5 V f = 270 Hz Ta = 25°C 1 10 Emitter current IE (mA) ICBO Ta 100 VCB = −10 V hfe 100 h Parameter hoe (µS) 10 hoe (µS) 10 hie (kΩ) hre (× 10−4) 1 Emitter current IE (mA) 10 hre (× 10−4) hie (kΩ) 1 0.1 0 0.1 10 ICBO (Ta) ICBO (Ta = 25°C) 0 100 h Parameter VCB = −5 V R = 50 kΩ 18 g Ta = 25°C VCB = −5 V f = 1 kHz Rg = 2 kΩ Ta = 25°C 5 4 20 Noise figure NF (dB) 5 NF IE 6 Noise figure NF (dB) Common emitter reverse transfer capacitance Cre (pF) Cre VCE 6 10 1 −1 −10 IE = 2 mA f = 270 Hz Ta = 25°C −100 Collector-emitter voltage VCE (V) SJC00045BED 1 0 25 50 75 100 125 150 Ambient temperature Ta (°C) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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