NTE NTE308P

NTE308P
Integrated Thyristor/Rectifier (ITR)
TV Horizontal Deflection & Commutating Switch
Absolute Maximum Ratings:
Repetitive Peak Forward Off–State Voltage (TC = +85°C, Note 1), VDRM . . . . . . . . . . . . . . . . . . 750V
Repetitive Peak Reverse Voltage (TC = +85°C, Note 1), VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
Mean On–State Current (TC = +60°C, 50Hz Sine Wave, Conduction Angle of 180°), IO, IT(AV)
Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0A
SCR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0A
RMS On–State Current (TC = +60°C, 50Hz Sine Wave, Conduction Angle of 180°), IF(RMS), IT(RMS)
Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A
SCR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0A
Surge Current (TC = +85°C, One Full Cycle), ITSM, IFSM
60Hz Sinusoidal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80A
50Hz Sinusoidal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A
Rate of Change of On–State Current (VD = 700V, IGT = 50mA, tr = 0.1µs), di/dt . . . . . . . . . 200A/µs
Peak Forward Gate Power (Negative Gate Bias = –10V, 10µs max, Note 2), PGM . . . . . . . . . . 25W
Peak Reverse Gate Power (Negative Gate Bias = –10V, 10µs max, Note 2), PRGM . . . . . . . . 25W
Operating Case Temperature Range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +85°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5°C/W
Lead Temperature (During Soldering, 1/8” from case, 10sec max), TL . . . . . . . . . . . . . . . . . . +225°C
Note 1. These values do not apply if there is a positive gate signal. Gate must be open or negatively
biased.
Note 2. Any product of gate current and gate voltage which results in a gate power less than the maximum is permitted, provided that the maximum reverse gate bias (as specified) is not exceeded.
Electrical Characteristics: (TC = +25°C “Maximum Ratings” unless otherwise specified)
Parameter
Min
Typ
Max Unit
VD = 700V, TC = +85°C
–
0.5
1.5
mA
VF
IF = 10A
–
1.35
2.0
V
VT
IT = 30A
–
1.75
3.0
V
Gate Trigger Current, Continuous DC
IGT
Anode Voltage = 12V, RL = 30Ω
–
15
45
mA
Gate Trigger Voltage, Continuous DC
VGT
Anode Voltage = 12V, RL = 30Ω
–
1.8
4.0
V
Peak Forward Blocking Current
Instantaneuos Voltage
Rectifier
SCR
Symbol
IDRM
Test Conditions
Electrical Characteristics (Cont’d): (TC = +25°C “Maximum Ratings” unless otherwise specified)
Parameter
Symbol
Rate of Rise of Off–State Voltage
dv/dt
Test Conditions
VD = 700V, VG = –2.5V, TC = +85°C
Min
Typ
Max Unit
1000
–
–
V/µs
Reverse Recovery Time (Rectifier Only)
trr
IFM = 10A, –diF/dt = –10A/µs, tp = 3µs
0.5
0.7
–
µs
Circuit Commutated Turn–Off Time
tq
Minimum Negative Gate Bias = –2.5V,
dv/dt = 400V/µs, TC = +80°C, Note 3
–
–
4.2
µs
Note 3. Turn–off time increases with temperature; therefore, case temperature must not exceed the
level indicated.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Gate
.100 (2.54)
Cathode
Anode/Tab