NTE310P Integrated Thyristor/Rectifier (ITR) TV Horizontal Deflection & Trace Switch Absolute Maximum Ratings: Repetitive Peak Forward Off–State Voltage (TC = +85°C, Note 1), VDRM . . . . . . . . . . . . . . . . . . 800V Repetitive Peak Reverse Voltage (TC = +85°C, Note 1), VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . 750V Mean On–State Current (TC = +60°C, 50Hz Sine Wave, Conduction Angle of 180°), IO, IT(AV) Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0A SCR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0A RMS On–State Current (TC = +60°C, 50Hz Sine Wave, Conduction Angle of 180°), IF(RMS), IT(RMS) Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A SCR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0A Surge Current (TC = +85°C, One Full Cycle), ITSM, IFSM 60Hz Sinusoidal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80A 50Hz Sinusoidal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A Rate of Change of On–State Current (VD = 700V, IGT = 50mA, tr = 0.1µs), di/dt . . . . . . . . . 200A/µs Peak Forward Gate Power (Negative Gate Bias = –10V, 10µs max, Note 2), PGM . . . . . . . . . . 25W Peak Reverse Gate Power (Negative Gate Bias = –10V, 10µs max, Note 2), PRGM . . . . . . . . 25W Operating Case Temperature Range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +85°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5°C/W Lead Temperature (During Soldering, 1/8” from case, 10sec max), TL . . . . . . . . . . . . . . . . . . +225°C Note 1. These values do not apply if there is a positive gate signal. Gate must be open or negatively biased. Note 2. Any product of gate current and gate voltage which results in a gate power less than the maximum is permitted, provided that the maximum reverse gate bias (as specified) is not exceeded. Electrical Characteristics: (TC = +25°C “Maximum Ratings” unless otherwise specified) Parameter Min Typ Max Unit VD = 700V, TC = +85°C – 0.5 1.5 mA VF IF = 10A – 1.35 1.7 V VT IT = 30A – 1.75 3.0 V Peak Forward Voltage (Rectifier Only) VFM IFM = 1A – 8 13 V Gate Trigger Current, Continuous DC IGT Anode Voltage = 12V, RL = 30Ω – 15 40 mA Gate Trigger Voltage, Continuous DC VGT Anode Voltage = 12V, RL = 30Ω – 1.8 4.0 V Peak Forward Blocking Current Instantaneuos Voltage Rectifier SCR Symbol IDRM Test Conditions Electrical Characteristics (Cont’d): (TC = +25°C “Maximum Ratings” unless otherwise specified) Parameter Symbol Rate of Rise of Off–State Voltage dv/dt Test Conditions Min Typ Max Unit VD = 700V, TC = +85°C 175 – – V/µs Reverse Recovery Time (Rectifier Only) trr IFM = 10A, –diF/dt = –10A/µs, tp = 3µs 0.5 0.7 – µs Circuit Commutated Turn–Off Time tq Minimum Negative Gate Bias = –20V, dv/dt = 175V/µs, TC = +80°C, Note 3 – – 2.4 µs Note 3. Turn–off time increases with temperature; therefore, case temperature must not exceed the level indicated. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Gate .100 (2.54) Cathode Anode/Tab