ETC 2SC4704B

2SC4704
Silicon NPN Epitaxial
Application
High frequency amplifier
Features
•
•
•
•
Excellent high frequency characteristics fT = 300 MHz typ
High voltage and low output capacitance VCEO = 200 V, Cob = 5.0 pF typ
Suitable for wide band video amplifier
Complementary pair of 2SA1810
Outline
TO-126 MOD
1
1. Emitter
2. Collector
3. Base
2
3
2SC4704
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
200
V
Collector to emitter voltage
VCEO
200
V
Emitter to base voltage
VEBO
4
V
Collector current
IC
0.2
A
Collector peak current
IC (peak)
0.5
A
Collector power dissipation
PC
1.25
W
PC*
1
10
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
200
—
—
V
IC = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
200
—
—
V
IC = 1 mA, RBE = _
Emitter to base breakdown
voltage
V(BR)EBO
4
—
—
V
IE = 10 µA, IC = 0
Collector cutoff current
ICBO
—
—
10
µA
VCB = 160 V, IE = 0
60
—
200
1
DC current transfer ratio
hFE*
Base to emitter voltage
VBE
—
—
1.0
V
VCE = 5 V, IC = 30 mA
Collector to emitter saturation
voltage
VCE (sat)
—
—
1.0
V
IC = 30 mA, IB = 3 mA
Gain bandwidth product
fT
200
300
—
MHz
VCE = 20 V, IC = 30 mA
Collector output capacitance
Cob
—
5.0
—
pF
VCB = 30 V, IE = 0, f = 1 MHz
Note:
1. The 2SC4704 is grouped by hFE and its specification is as follows.
B
C
60 to 120
100 to 120
2
VCE = 5 V, IC = 10 mA
2SC4704
Maximum Collector Dissipation Curve
Collector power dissipation Pc (W)
12
10
8
6
4
2
0
50
100
Case Temperature TC (°C)
150
Area of Safe Operation
1.0
1 Shot Pulse
Ta = 25°C
0.2
s
0m
n
=1
tio
PW
era
Op 5°C)
DC = 2
(T C
Collector Current IC (A)
0.5
0.1
0.05
0.02
0.01
10
20
50 100 200
500 1,000
Collector to emitter Voltage VCE (V)
Typical Output Characteristics
200
Pc = 1.25 W
Collector Current IC (mA)
1.0
1.8 1.6 1.4 1.2
160
2.0
0.8
0.6
0.4
120
80
0.2 mA
40
IB = 0
0
2
4
6
8
10
Collector to emitter Voltage VCE (V)
DC Current Transfer Ratio
vs. Collector Current
DC current transfer ratio hFE
1,000
500
5°C
200
TC
=7
°C
25
100
5°C
–2
50
20
VCE = 5 V
Pulse
10
1
2
5 10 20
50 100 200
Collector current IC (mA)
3
2SC4704
Collector to emitter saturation voltage
VCE (sat) (V)
Collector to Emitter Saturation Voltage
vs. Collector Current
1.0
lC/lB = 10
0.5 Pulse
5°
0.2
TC
0.1
=7
C
–25°C
0.05
25°C
0.02
0.01
1
2
5
10 20
50 100 200
Collector current IC (mA)
Typical Transfer Characteristics
200
VCE = 5 V
Pulse
Collector current IC (mA)
100
50
TC = 75°C
20
25°C
10
–25°C
5
2
1
0.1 0.2
0.5 1.0 2.0
5.0
Base to emitter voltage VBE (V)
Gain bandwidth product fT (MHz)
Gain Bandwidth Product
vs. Collector Current
1,000
500
200
100
50
VCE = 20 V
TC = 25°C
20
10
1
2
5 10 20
50 100 200
Collector current IC (mA)
Collector output capacitance Cob (pF)
Collector Output Capacitance
vs. Collector to Base Voltage
100
50
20
10
5
2
1.0
1.0
4
IE = 0
f = 1 MHz
2
5
10 20
50 100
Collector to base voltage VCB (V)
2SC4704
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of this document without Hitachi’s permission.
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other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
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or Hitachi, Ltd.
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APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
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