HITACHI 2SD2300

2SD2300
Silicon NPN Triple Diffused
Application
CTV horizontal deflection output
Features
• High breakdown voltage
VCBO = 1500 V
• Built-in damper diode type
Outline
TO-3PFM
2
1. Base
2. Collector
3. Emitter
1
2
1
ID
3
3
2SD2300
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to emitter voltage
VCES
1500
V
Emitter to base voltage
VEBO
6
V
Collector current
IC
5
A
Collector peak current
IC(peak)
6
A
Collector surge current
IC(surge)
16
A
50
W
1
Collector power dissipation
PC*
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
C to E diode forward current
ID
6
A
Note:
1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Emitter to base breakdown
voltage
V(BR)EBO
6
—
—
V
IE = 350 mA, IC = 0
Collector cutoff current
ICES
—
—
500
µA
VCE = 1500 V, RBE = 0
DC current transfer ratio
hFE
—
—
20
Collector to emitter saturation
voltage
VCE(sat)
—
—
5
V
IC = 4.5 A, IB = 1.2 A
Base to emitter saturation
voltage
VBE(sat)
—
—
1.5
V
IC = 4.5 A, IB = 1.2 A
C to E diode forward voltage
VECF
—
—
3.0
V
IF = 6 A
Fall time
tf
—
—
1.0
µs
ICP = 4 A, IB1 = 0.8 A,
IB2 ≈ –1.5 A
2
VCE = 5 V, IC = 1 A
2SD2300
Area of Safe Operation
Collector current IC (A)
20
f = 15.75 kHz
Ta = 25°C
(100 V, 16 A)
16
For picture tube arcing
12
8
4
(800 V, 3 A)
0.5 mA
800
1,200 1,600 2,000
400
Collector to emitter voltage VCE (V)
0
Maximum Collector Dissipation Curve
Collector power dissipation PC (W)
60
40
20
0
50
100
Case temperature TC (°C)
150
Typical Output Characteristecs
Collector current IC (A)
1
A
5
A
0.9 0.8 A 0.7 A
0.6 A
0.5 A
0.4 A
0.3 A
4
3
0.2 A
2
0.1 A
1
TC = 25°C
0
IB = 0
2
4
6
8
10
Collector to emitter voltage VCE (V)
DC Current Transfer Ratio vs.
Collector Current
DC current transfer ratio hFE
50
20
75°C
10
5
25°C
TC = –25°C
2
VCE = 5 V
Pulse
1
0.1
0.2
0.5
1.0
2
Collector current IC (A)
5
3
Collector to emitter saturation voltage VCE(sat) (V)
2SD2300
Collector to Emitter Saturation Voltage
vs. Collector Current
3
2
IC = 3 IB
Pulse
1.0
0.5
25°C
0.2
–25°C
0.1
0.05
0.1
TC = 75°C
0.2
0.5
1.0
Collector current IC (A)
3
5
Base to emitter saturation voltage VBE(sat) (V)
Base to Emitter Saturation Voltage
vs. Collector Current
5
IC = 3 IB
Pulse
2
TC = –25°C
1.0
25°C
0.5
75°C
0.2
Collector to emitter saturation voltage VCE(sat) (V)
0.1
4
0.2
0.5
1.0
2
Collector current IC (A)
5
Collector to Emitter Saturation Voltage
vs. Base Current
10
TC = 25°C
Pulse
8
6
IC = 2 A 4 A 5 A
4
2
0
0.1
0.2
0.5
1.0
2
Base current IB (A)
5
2SD2300
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of this document without Hitachi’s permission.
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other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
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or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
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