RENESAS 2SC5015-T1

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DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5015
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
4-PIN SUPER MINIMOLD (18)
FEATURES
• High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz
• Low noise and high gain
• Low voltage operation
• 4-pin super minimold (18) package
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC5015
50 pcs (Non reel)
• 8 mm wide embossed taping
2SC5015-T1
3 kpcs/reel
• Pin 3 (Base), Pin 4 (Emitter) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
9
V
Collector to Emitter Voltage
VCEO
6
V
Emitter to Base Voltage
VEBO
2
V
IC
30
mA
Ptot
150
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Collector Current
Total Power Dissipation
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10403EJ01V0DS (1st edition)
(Previous No. P10394EJ2V0DS00)
Date Published June 2003 CP(K)
Printed in Japan
The mark • shows major revised points.
 NEC Compound Semiconductor Devices 1993, 2003
2SC5015
ELECTRICAL CHARACTERISTICS (TA = +25°°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
−
−
0.1
µA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA
−
−
0.1
µA
VCE = 3 V, IC = 10 mA
75
−
150
−
VCE = 3 V, IC = 10 mA, f = 2 GHz
−
12
−
GHz
S21e
VCE = 3 V, IC = 10 mA, f = 2 GHz
9
11
−
dB
NF
VCE = 3 V, IC = 3 mA, f = 2 GHz
−
1.5
2.5
dB
VCB = 3 V, IE = 0 mA, f = 1 MHz
−
0.3
0.5
pF
hFE
DC Current Gain
Note 1
RF Characteristics
Gain Bandwidth Product
fT
2
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Cre
Note 2
Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
2
Rank
KB
Marking
T83
hFE Value
75 to 150
Data Sheet PU10403EJ01V0DS
2SC5015
TYPICAL CHARACTERISTICS (TA = +25°°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance Cre (pF)
Total Power Dissipation Ptot (mW)
250
200
150
100
50
0
75
100
125
150
1
0.5
0.2
0.1
1
2
5
10
20
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
Collector Current IC (mA)
10
1
0.1
0.01
0.001
100
f = 1 MHz
Ambient Temperature TA (˚C)
VCE = 1 V
0.0001
0.4
Collector Current IC (mA)
50
0.5
0.6
0.7
0.8
0.9
1.0
VCE = 2 V
10
1
0.1
0.01
0.001
0.0001
0.4
0.5
0.6
0.7
0.9
0.8
1.0
Base to Emitter Voltage VBE (V)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
30
VCE = 3 V
10
Collector Current IC (mA)
Collector Current IC (mA)
100
25
2
1
0.1
0.01
0.001
25
200 µ A
180 µ A
160 µ A
140 µ A
120 µ A
100 µ A
80 µ A
60 µ A
40 µ A
20
15
10
5
IB = 20 µ A
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
2
4
6
8
Collector to Emitter Voltage VCE (V)
Base to Emitter Voltage VBE (V)
Data Sheet PU10403EJ01V0DS
3
2SC5015
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
1 000
VCE = 2 V
DC Current Gain hFE
DC Current Gain hFE
VCE = 1 V
100
10
0.1
1
10
10
0.1
100
1
DC CURRENT GAIN vs.
COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
14
Gain Bandwidth Product fT (GHz)
100
10
0.1
1
10
VCE = 3 V
f = 2 GHz
12
10
8
6
4
2
0
1
100
2
Collector Current IC (mA)
5
10
20
50
Collector Current IC (mA)
INSERTION POWER GAIN, MAG
vs. FREQUENCY
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
12
50
VCE = 3 V
IC = 10 mA
Insertion Power Gain |S21e|2 (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
100
Collector Current IC (mA)
VCE = 3 V
40
30
MAG
20
|S21e|2
10
0
0.1
0.2
0.5
1
2
VCE = 3 V
f = 2 GHz
10
5
8
6
4
2
0
1
2
5
10
20
Collector Current IC (mA)
Frequency f (GHz)
4
10
Collector Current IC (mA)
1 000
DC Current Gain hFE
100
Data Sheet PU10403EJ01V0DS
50
2SC5015
NOISE FIGURE vs.
COLLECTOR CURRENT
5
Noise Figure NF (dB)
VCE = 3 V
f = 2 GHz
4
3
2
1
0
1
2
5
10
20
50
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.csd-nec.com/
Data Sheet PU10403EJ01V0DS
5
2SC5015
PACKAGE DIMENSIONS
4-PIN SUPER MINIMOLD (18) (UNIT: mm)
2.1±0.2
0.65
0.3+0.1
–0.05
3
2
0.65
1.30
0.65
0.15+0.1
–0.05
4
0.3+0.1
–0.05
1
0 to 0.1
0.3
0.9±0.1
0.4+0.1
–0.05
0.60
1.25
T83
2.0±0.2
0.3+0.1
–0.05
1.25±0.1
PIN CONNECTIONS
1.
2.
3.
4.
6
Collector
Emitter
Base
Emitter
Data Sheet PU10403EJ01V0DS
2SC5015
• The information in this document is current as of June, 2003. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
• While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
• NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4 - 0110
Data Sheet PU10403EJ01V0DS
7
2SC5015
For further information, please contact
NEC Compound Semiconductor Devices, Ltd.
5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 E-mail: [email protected]
NEC Compound Semiconductor Devices Hong Kong Limited
Hong Kong Head Office
FAX: +852-3107-7309 E-mail: [email protected]
TEL: +852-3107-7303
Taipei Branch Office
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
Korea Branch Office
FAX: +82-2-558-5209
TEL: +82-2-558-2120
NEC Electronics (Europe) GmbH
http://www.ee.nec.de/
TEL: +49-211-6503-01 FAX: +49-211-6503-487
California Eastern Laboratories, Inc.
http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
0302-1