Transistor 2SD1051 Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB819 Unit: mm 6.9±0.1 1.5 1.0 0.85 4.5±0.1 4.1±0.2 0. 7 2.4±0.2 2.0±0.2 3.5±0.1 ● High collector to emitter voltage VCEO. Large collector power dissipation PC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0 R ● 1.0±0.1 ● 0.4 ■ Features 2.5±0.1 1.5 R0.9 R0.9 * Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 40 V Emitter to base voltage VEBO 5 V Peak collector current ICP 3 A Collector current IC 1.5 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1cm2 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion ■ Electrical Characteristics 3 2 2.5 1:Base 2:Collector 3:Emitter 1 2.5 EIAJ:SC–71 M Type Mold Package or more, and the board (Ta=25˚C) Parameter Symbol Collector cutoff current 0.45±0.05 (Ta=25˚C) 1.25±0.05 0.55±0.1 ■ Absolute Maximum Ratings max Unit ICBO VCB = 20V, IE = 0 Conditions min typ 1 µA ICEO VCE = 10V, IB = 0 100 µA Emitter cutoff current IEBO VEB = 5V, IE = 0 10 µA Collector to base voltage VCBO IC = 1mA, IE = 0 50 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 40 V *1 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) VCE = 5V, IC = 1A*2 80 120 220 IC = 1.5A, IB = 0.15A*2 1 0.2A*2 Base to emitter saturation voltage VBE(sat) IC = 2A, IB = Transition frequency fT VCB = 5V, IE = –0.5A*2, f = 200MHz 150 1.5 Collector output capacitance Cob VCB = 20V, IE = 0, f = 1MHz 45 FE V MHz pF *2 *1h V Pulse measurement Rank classification Rank Q R hFE 80 ~ 160 120 ~ 220 1 Transistor 2SD1051 IC — VCE 1.0 0.8 0.6 0.4 Ta=25˚C 3.5 IB=40mA Collector current IC (A) 35mA 3.0 30mA 2.5 25mA 20mA 2.0 15mA 1.5 10mA 1.0 0.2 5mA 0.5 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 10 3 25˚C Ta=–25˚C 75˚C 0.3 0.1 0.03 1 3 Ta=75˚C –25˚C 100 50 0.1 0.3 1 3 0.003 0.001 0.01 0.03 20 0 30 100 Collector to base voltage VCB (V) 0.3 1 10 VCB=5V Ta=25˚C 160 120 80 40 0 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 Emitter current IE (A) ICBO — Ta 1000 VCB=20V Ta=25˚C 50 300 40 30 20 10 0 0.001 3 200 ICBO (Ta) ICBO (Ta=25˚C) 40 0.1 Collector current IC (A) 10 60 Collector to emitter voltage VCER (V) Collector output capacitance Cob (pF) 0.01 VCER — RBE 60 10 0.03 Collector current IC (A) 80 3 25˚C 150 0 0.01 0.03 10 IE=0 f=1MHz Ta=25˚C 1 –25˚C 0.1 240 200 Cob — VCB 100 25˚C fT — I E 250 Collector current IC (A) 120 Ta=75˚C 0.3 VCE=5V Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 30 0.3 1 300 IC/IB=10 0.1 10 3 hFE — IC 100 0.01 0.01 0.03 8 IC/IB=10 Collector to emitter voltage VCE (V) VBE(sat) — IC 1 6 10 Transition frequency fT (MHz) Collector power dissipation PC (W) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 0 2 VCE(sat) — IC 4.0 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 1.2 100 30 10 3 1 0.01 0.1 1 10 Base to emitter resistance RBE (kΩ) 0 20 40 60 80 100 Ambient temperature Ta (˚C)