Transistor 2SD1119 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1.0–0.2 ● 2.6±0.1 ● 1.5±0.1 4.5±0.1 1.6±0.2 ■ Features 0.5±0.08 1.5±0.1 0.4±0.04 3.0±0.15 3 ■ Absolute Maximum Ratings * 1 (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 25 V Emitter to base voltage VEBO 7 V Peak collector current ICP 5 A Collector current IC 3 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1cm2 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion ■ Electrical Characteristics 2 marking 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Marking symbol : T or more, and the board (Ta=25˚C) Parameter Symbol Conditions min typ Unit 0.1 µA ICBO Collector to emitter voltage VCEO IC = 1mA, IB = 0 25 V Emitter to base voltage VEBO IE = 10µA, IC = 0 7 V hFE1 Forward current transfer ratio VCB = 10V, IE = 0 max Collector cutoff current *1 VCE = 2V, IC = 0.5A*2 hFE2 VCE = 2V, IC = 2A*2 Collector to emitter saturation voltage VCE(sat) IC = 3A, IB = 0.1A*2 Transition frequency fT VCB = 6V, IE = –50mA, f = 200MHz Collector output capacitance Cob VCB = 20V, IE = 0, f = 1MHz 230 600 150 1 150 50 *2 *1h V MHz pF Pulse measurement FE1 Rank classification Rank Q R hFE1 230 ~ 380 340 ~ 600 Marking Symbol TQ TR 1 Transistor 2SD1119 PC — Ta IC — VCE 1.0 0.8 0.6 0.4 6 IB=7mA 2.0 0.2 1.6 5mA 4mA 1.2 3mA 0.8 2mA 60 80 100 120 140 160 Ambient temperature Ta (˚C) 0.4 1 0.3 Ta=75˚C 25˚C –25˚C 0.01 0.003 0.001 0.01 0.03 0.1 0.3 1 0.8 1.2 1.6 2.0 2.4 3 30 10 3 25˚C Ta=–25˚C 1 75˚C 0.3 0.1 0.03 0.01 0.01 0.03 10 0.1 0.3 1 3 10 Collector current IC (A) fT — IE 0.4 100 Collector output capacitance Cob (pF) VCB=6V Ta=25˚C 350 300 250 200 150 100 50 IE=0 f=1MHz Ta=25˚C 80 60 40 20 0 –3 Emitter current IE (A) –10 1 3 10 0.8 1.2 1.6 2.0 Base to emitter voltage VBE (V) 600 VCE=2V 30 500 400 Ta=75˚C 300 25˚C –25˚C 200 100 0 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) Cob — VCB 400 –1 0 IC/IB=30 Collector current IC (A) 0 – 0.01 – 0.03 – 0.1 – 0.3 2 hFE — IC 100 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) 3 0.03 3 VBE(sat) — IC IC/IB=30 0.1 4 Collector to emitter voltage VCE (V) VCE(sat) — IC 10 –25˚C 0 0 Forward current transfer ratio hFE 40 Ta=75˚C 1 1mA 0 20 25˚C 5 6mA 0.4 0 Transition frequency fT (MHz) VCE=2V Ta=25˚C Collector current IC (A) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 0 2 IC — VBE 2.4 Collector current IC (A) Collector power dissipation PC (W) 1.2 100 Collector to base voltage VCB (V) 10