PDM41257 256K Static RAM 256K x 1-Bit Description Features n High-speed access times Com’l: 7, 8, 10, 12 and 15 ns Industrial: 8, 10, 12 and 15 ns n Low power operation (typical) - PDM41257SA Active: 400 mW Standby: 150 mW - PDM41257LA Active: 350 mW Standby: 25 mW n n n 1 The PDM41257 is a high-performance CMOS static RAM organized as 262,144 x 1 bit. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE goes LOW. The PDM41257 operates from a single +5V power supply and all the inputs and outputs are fully TTLcompatible. The PDM41257 comes in two versions, the standard power version PDM41257SA and a low power version the PDM41257LA. The two versions are functionally the same and only differ in their power consumption. Single +5V (±10%) power supply TTL compatible inputs and outputs Packages Plastic SOJ (300 mil) - SO The PDM41257 is available in a 24-pin 300-mil plastic SOJ for surface mount applications. 2 3 4 5 6 7 Functional Block Diagram A0 • • Addresses • • • A17 Decoder • • • • • 8 Memory Matrix 9 • • • • • DIN Column I/O DOUT 10 CE 11 WE 12 Rev. 2.2 - 4/27/98 1 PDM41257 Pin Configuration Pin Description SOJ Name Description A17 A17-A0 Address Inputs A16 DIN Data Input A15 DOUT Data Output A14 WE Write Enable Input A13 CE Chip Enable Input VCC Power (+5V) VSS Ground A0 1 24 Vcc A2 3 22 A1 A3 A4 A5 A6 A7 A8 DOUT WE Vss 23 2 21 4 20 5 6 19 18 7 8 17 16 9 10 15 11 14 12 13 A12 A11 A10 A9 DIN CE Truth Table WE CE DOUT MODE X H Hi-Z Standby H L DOUT Read L L Hi-Z Write NOTE: 1. H = VIH, L = VIL, X = DON’T CARE Absolute Maximum Ratings (1) Symbol Rating TTERM Terminal Voltage with Respect to VSS TBIAS Temperature Under Bias TSTG Storage Temperature Com’l. Ind. Unit –0.5 to +7.0 –0.5 to +7.0 °C –55 to +125 –65 to +135 °C –55 to +125 –65 to +150 °C PT Power Dissipation 1.0 1.0 W IOUT DC Output Current 50 50 mA Tj Maximum Junction Temperature (2) 125 145 °C NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. Appropriate thermal calculations should be performed in all cases and specifically for those where the chosen package has a large thermal resistance (e.g., TSOP). The calculation should be of the form: Tj = Ta + P * θja, where Ta is the ambient temperature, P is average operating power and θja the thermal resistance of the package. For this product, use the following θja value: SOJ: 83o C/W 2 Rev. 2.2 - 4/27/98 PDM41257 Recommended DC Operating Conditions Symbol Parameter Min. Typ. Max. Unit VCC Supply Voltage 4.5 5.0 5.5 V VSS Supply Voltage 0 0 0 V Commercial Ambient Temperature 0 25 70 °C Industrial Ambient Temperature –40 25 85 °C 1 2 3 DC Electrical Characteristics (VCC = 5.0V ± 10%) PDM41257SA PDM41257LA Min. Max. Min. Max. Unit Symbol Parameter Test Conditions ILI Input Leakage Current VCC = MAX., VIN = VSS to VCC Com’l/ Ind. –5 5 –5 5 µA ILO Output Leakage Current VCC= MAX., CE = VIH, VOUT = VSS to VCC Com’l/ Ind. –5 5 –5 5 µA 0.8 V VIL Input Low Voltage –0.5 (1) 0.8 –0.5 (1) VIH Input High Voltage 2.2 6.0 2.2 6.0 V VOL Output Low Voltage IOL = 8 mA, VCC = Min. IOL = 10 mA, VCC = Min. — — 0.4 0.5 — — 0.4 0.5 V V VOH Output High Voltage IOH = –4 mA, VCC = Min. 2.4 — 2.4 — V 4 5 6 7 NOTE: 1. VIL(min) = –3.0V for pulse width less than 20 ns. Power Supply Characteristics -7 Symbol Parameter ICC ISB ISB1 -8 -10 -12 8 -15 Power Com’l. Com’l. Ind. Com’l. Ind. Com’l. Ind. Com’l. Ind. Units Operating Current CE = VIL SA 210 200 210 190 200 180 190 170 180 mA f = fMAX = 1/tRC VCC = Max IOUT = 0 mA LA 190 180 190 170 180 160 170 150 160 mA Standby Current CE = VIH SA 90 80 80 70 70 60 60 50 50 mA f = fMAX = 1/tRC VCC = Max LA 90 80 80 70 70 60 60 50 50 mA Full Standby Current CE ≥ VCC – 0.2V SA 20 20 20 20 20 20 20 20 20 mA f=0 VCC = Max VIN ≥ VCC – 0.2V or ≤ 0.2V LA 5 5 5 5 5 5 5 5 5 mA 9 10 11 12 SHADED AREA = PRELIMINARY DATA NOTE: All values are maximum guaranteed values. Rev. 2.2 - 4/27/98 3 PDM41257 Capacitance(1) (TA = +25°C, f = 1.0 MHz) Symbol Parameter Conditions CIN Input Capacitance COUT Output Capacitance Max. Unit VIN = 0V 8 pF VOUT = 0V 8 pF NOTE: 1. This parameter is determined by device characterization but is not production tested. AC Test Conditions Input Pulse Levels VSS to 3.0V Input rise and fall times 3 ns Input timing reference levels 1.5V Output reference levels 1.5V Output load See Figures 1 and 2 +5V +5V 480Ω 480Ω DOUT DOUT 255Ω 30 pF Figure 1. Output Load Equivalent 255Ω 5 pF Figure 2. Output Load Equivalent Delta tAA - nS (for tLZCE, tHZCE, tLZWE, tHZWE) 4 Typical Delta tAA vs Capacitive Loading 5 4 3 2 1 0 0 30 60 90 120 Additional Lumped Capacitive Loading (pF) Rev. 2.2 - 4/27/98 PDM41257 Read Cycle No. 1(1) 1 t RC ADDR t AA 2 t OH DOUT PREVIOUS DATA VALID DATA VALID 3 Read Cycle No. 2(2) 4 tRC ADDR tAA 5 tACE CE tHZCE tLZCE tLZOE 6 tHZOE DOUT DATA VALID tAOE 7 8 AC Electrical Characteristics -7(6) Description READ Cycle -8(6) -10(6) -12 -15 Sym Min. READ cycle time tRC 7 Address access time tAA 7 8 10 12 15 ns Chip enable access time tACE 7 8 10 12 15 ns Output hold from address change Max. Min. Max. 8 Min. Max. 10 Min. Max. 12 Min. Max. 15 Units tOH 3 3 3 3 3 ns Chip enable to output in low Z(3, 4, 5) tLZCE 5 5 5 5 5 ns Chip disable to output in high Z(3, 4, 5) tHZCE Chip enable to power up time (4) Chip disable to power down time(4) tPU tPD 5 0 5 0 7 10 0 8 10 0 10 10 0 12 9 ns 10 ns 11 ns 15 ns SHADED AREA = PRELIMINARY DATA. Notes referenced are after Data Retention Table. Rev. 2.2 - 4/27/98 12 5 PDM41257 Write Cycle No. 1 (Write Enable Controlled) t WC ADDR t AW CE t WE t AH t CW t WP AS t DH t DS DIN DATA VALID t HZWE t LZWE HIGH Z DOUT Write Cycle No. 2 (Chip Enable Controlled) t WC ADDR t AW tAS CE tCW t AH t WP WE UNDEFINED t DS DIN t DH DATA VALID DON'T CARE AC Electrical Characteristics -7(6) Description -8(6) -10(6) -12 -15 WRITE Cycle Sym Min. WRITE cycle time tWC 7 8 10 12 15 ns Chip enable to end of write tCW 7 8 10 10 12 ns Address valid to end of write tAW 7 8 10 10 12 ns Address setup time tAS 0 0 0 0 0 ns Address hold from end of write tAH 0 0 0 0 0 ns Write pulse width tWP 7 8 10 10 11 ns Data setup time tDS 6 7 7 7 8 ns Data hold time tDH 0 0 0 0 0 ns (4,5) tLZWE 0 0 0 0 0 ns (4,5) tHZWE Write disable to output in low Z Write enable to output in high Z Max. 3 Min. Max. 3 Min. Max. 3 Min. Max. 3 Min. Max. 3 Units ns SHADED AREA = PRELIMINARY DATA 6 Rev. 2.2 - 4/27/98 PDM41257 Low VCC Data Retention Waveform Data Retention Mode V CC 4.5V CE 4.5V VDR t CDR 1 tR 2 VDR VIH V IL DON'T CARE 3 Data Retention Electrical Characteristics (LA Version Only) Symbol Parameter Test Conditions VDR VCC for Retention Data ICCDR Data Retention Current CE ≥ VCC – 0.2V VIN ≥ VCC – 0.2V or ≤ 0.2V tCDR Chip Deselect to Data Retention Time tR(4) Operation Recovery Time Min. Typ. Max. Unit 2 — — V VCC = 2V — 95 500 µA VCC = 3V — 350 750 µA 0 — — ns tRC — — ns 4 5 NOTES: (For three previous Electrical Characteristics tables) 1. The device is continuously selected. Chip Enable is held in its active state. 2. The address is valid prior to or coincident with the latest occuring Chip Enable. 3. At any given temperature and voltage condition, tHZCE is less than tLZCE. 4. This parameter is sampled. 5. The parameter is tested with CL = 5 pF as shown in Figure 2. Transition is measured ±200 mV from steady state voltage. 6. VCC = 5V ± 5%. XXXXX X Power XX Speed X X X Package Type Process Temp. Range Preferred Shipping Container Blank TR TY Tubes Tape & Reel Tray Blank I A Commercial (0° to +70°C) Industrial (–40°C to +85°C) SO 9 10 Automotive ( –40°C to +105°C) 24-pin 300-mil Plastic SOJ 7 8 10 12 15 Commercial Only SA LA Standard Power Low Power 11 12 PDM41257 - 256K (256Kx1) Static RAM Faster Memories for a Faster World ™ Rev. 2.2 - 4/27/98 7 8 Ordering Information Device Type 6 7