UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 1 SOT-223 SOT-89 APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A 1 TO-92 1 TO-92NL 1 TO-126C 1 TO-126 1 TO-251 1 TO-252 *Pb-free plating product number: 2SD669L/2SD669AL ORDERING INFORMATION Order Number Normal Lead Free Plating 2SD669-x-AA3-R 2SD669L-x-AA3-R 2SD669-x-AB3-R 2SD669L-x-AB3-R 2SD669-x-T60-K 2SD669L-x-T60-K 2SD669-x-T6C-R 2SD669L-x-T6C-R 2SD669-x-T92-B 2SD669L-x-T92-B 2SD669-x-T92-K 2SD669L-x-T92-K 2SD669-x-T9N-B 2SD669L-x-T9N-B 2SD669-x-T9N-K 2SD669L-x-T9N-K 2SD669-x-T9N-R 2SD669L-x-T9N-R 2SD669-x-TM3-T 2SD669L-x-TM3-T 2SD669-x-TN3-R 2SD669L-x-TN3-R 2SD669-x-TN3-T 2SD669L-x-TN3-T www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd Package SOT-223 SOT-89 TO-126 TO-126C TO-92 TO-92 TO-92NL TO-92NL TO-92NL TO-251 TO-252 TO-252 Pin Assignment 1 2 3 B C E B C E E C B E C B E C B E C B E C B E C B E C B E C B B C E B C E Packing Tape Reel Tape Reel Bulk Bulk Tape Box Bulk Tape Box Bulk Tape Reel Tube Tape Reel Tube 1 of 5 QW-R204-005,E 2SD669/A NPN SILICON TRANSISTOR ORDERING INFORMATION(Cont.) Order Number Normal Lead Free Plating 2SD669A-x-AA3-R 2SD669AL-x-AA3-R 2SD669A-x-AB3-R 2SD669AL-x-AB3-R 2SD669A-x-T60-K 2SD669AL-x-T60-K 2SD669A-x-T6C-R 2SD669AL-x-T6C-R 2SD669A-x-T92-B 2SD669AL-x-T92-B 2SD669A-x-T92-K 2SD669AL-x-T92-K 2SD669A-x-T9N-B 2SD669AL-x-T9N-B 2SD669A-x-T9N-K 2SD669AL-x-T9N-K 2SD669A-x-T9N-R 2SD669AL-x-T9N-R 2SD669A-x-TM3-T 2SD669AL-x-TM3-T 2SD669A-x-TN3-R 2SD669AL-x-TN3-R 2SD669A-x-TN3-T 2SD669AL-x-TN3-T Package SOT-223 SOT-89 TO-126 TO-126C TO-92 TO-92 TO-92NL TO-92NL TO-92NL TO-251 TO-252 TO-252 2SD669L-x-AB3-R (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Pin Assignment 1 2 3 B C E B C E E C B E C B E C B E C B E C B E C B E C B E C B B C E B C E Packing Tape Reel Tape Reel Bulk Bulk Tape Box Bulk Tape Box Bulk Tape Reel Tube Tape Reel Tube (1) K: Bulk, R: Tape Reel, T: Tube (2) AA3: SOT-223, AB3: SOT-89, T60: TO-126, T 6C: TO-126C, TM3: TO-251, TN3: TO-252, T 92:TO-92, T9N: TO-92NL (3) x: refer to Classification of hFE1 (4) L: Lead Free Plating, Blank: Pb/Sn 2 of 5 QW-R204-005,E 2SD669/A NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL VCBO Collector-Base Voltage 2SD669 2SD669A Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Collector Power Dissipation Collector Power Dissipation VCEO VEBO IC lC(PEAK) SOT-223 TO-126 PD RATINGS 180 120 160 5 1.5 3 0.5 1 UNIT V V V A A W W Junction Temperature TJ +150 ℃ Storage Temperature TSTG -40 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER Collector to Base Breakdown Voltage Collector to Emitter Breakdown 2SD669 Voltage 2SD669A Emitter to Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Current Gain Bandwidth Product Output Capacitance SYMBOL TEST CONDITIONS BVCBO IC=1mA, IE=0 BVCEO IC=10mA, RBE=∞ BVEBO ICBO hFE1 hFE2 VCE(SAT) VBE fT Cob IE=1mA, IC=0 VCB=160V, IE=0 VCE=5V, IC=150mA (Note) VCE=5V, IC=500mA (Note) IC=600mA, IB=50mA (Note) VCE=5V, IC=150mA (Note) VCE=5V, IC=150mA (Note) VCB=10V, IE=0, f=1MHz MIN 180 120 160 5 TYP MAX UNIT V V 10 320 60 30 1 1.5 140 14 V µA V V MHz pF Note: Pulse test. CLASSIFICATION OF hFE1 RANK RANGE B 60-120 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw C 100-200 D 160-320 3 of 5 QW-R204-005,E 2SD669/A NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS DC Current Transfer Ratio vs. Collector Current Collector to Emitter Saturation Voltage vs. Collector Current 1.2 5℃ Ta=7 IC=10 IB 250 25 200 -20 150 100 VCE=5V 50 1.0 0.8 0.6 0.4 5 =7 TC 0.2 -2 0 0 1 1 3 10 30 100 300 1,000 3,000 1 3 10 Collector Current, IC (mA) Gain Bandwidth Product, fT (MHz) Base to Emitter Saturation Voltage, VBE(SAT) (V) ℃ =-20 0.8 TC 0.6 25 75 0.4 0.2 1 3 10 30 300 1,000 100 300 1,000 VCE=5V Ta=25℃ 200 160 120 80 40 0 10 Collector Current, IC (mA) 30 100 300 1,000 Collector Current, IC (mA) Area of Safe Operation Collector Output Capacitance vs. Collector to Base Voltage 200 3 f=1MHz IE=0 100 Collector Current, IC (A) Collector Output Capacitance, Cob (pF) 100 Gain Bandwidth Product vs. Collector Current 240 IC=10IB 1.0 30 Collector Current, IC (mA) Base to Emitter Saturation Voltage vs. Collector Current 1.2 0 ℃ 25 Collector to emitter saturation voltage, VCE(SAT) (V) DC Current Transfer Ratio, hFE 300 50 20 10 5 (13.3V, 1.5A) 1.0 40V, 0.5A 2SD669A 0.3 0.1 DC Operation (TC=25℃) (120V, 0.04A) 0.03 (160V, 0.02A) 2SD669 2 1 2 5 10 20 50 100 Collector to Base Voltage, VCB (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0.01 1 3 10 30 100 300 Collector to Emitter Voltage, VCE (V) 4 of 5 QW-R204-005,E 2SD669/A NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS(Cont.) Typical Transfer Characteristics VCE=5V 200 50 20 10 25 -20 100 Ta= 7 5℃ Collector Current, IC (mA) 500 5 2 1 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage, VBE (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R204-005,E