KEC PF1007UDF8

SEMICONDUCTOR
PF1007UDF8
TECHNICAL DATA
EMI Filtering TVS
EMI Filtering TVS For Data Line
C
A
E
1
4
B
EMI/RFI filtering.
F
G
FEATURES
GND PAD
H
Pin 1
ESD Protection to IEC 61000-4-2 Level 4.
Low insertion loss.
8
Good attenuation of high frequency signals.
D 5
BOTTOM VIEW
TOP VIEW
Low clamping voltage.
Low operating and leakage current.
DIM
A
B
C
D
E
F
G
H
J
K
L
Four elements in one package
J
K
L
SIDE VIEW
1,8 : Filter channel 1
2,7 : Filter channel 2
3,6 : Filter channel 3
4,5 : Filter channel 4
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
SYMBOL
RATING
PR
100
*PD
400
Junction Temperature
Tj
150
Storage Temperature
Tstg
DC Power Per Resistor
MILLIMETERS
1.80
1.20
_ 0.10
1.00 +
_ 0.05
0.20 +
0.40
_ 0.10
0.30 +
_ 0.05
0.25 +
0.20 Min
_ 0.05
0.50 +
0.125
0.03+0.02/-0.03
UNIT
UDFN-8
mW
Power Dissipation
-55
150
* Total Package Power Dissipation
EQUIVALENT CIRCUIT
FILTERn*
100Ω
MARKING
Type Name
FILTERn*
T9
7.5pF
7.5pF
Lot No.
GND
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
Reverse Stand-Off Voltage
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
VRWM
-
-
-
5
V
It=1mA
6
-
-
V
VRWM=3.3V
-
-
1
A
VR=0V, ZSOURCE=50 , ZLOAD=50
-
200
-
MHz
Between Input and Output
-
100
-
VR=2.5V, Between I/O Pins and GND
-
15
-
VBR
Reverse Breakdown Voltage
IR
Reverse Leakage Current
f3dB
Cutoff Frequency
Resistance
Capacitance
2007. 12. 27
)
R
C2.5V
Revision No : 0
pF
1/2
PF1007UDF8
S21 - F
2.0
0
INSERTION LOSS (dB)
NORMALIZED CAPACITANCE
CJ - V R
1.5
1.0
0.5
-10
-20
-30
-40
0.0
0
1
2
3
4
5
1
10
100
1000
6000
FREQUENCY (MHz)
REVERSE VOLTAGE VR (V)
REVERSE LEAKAGE CURRENT IR (nA)
IR - VR
100
10
1
0.1
0
1
2
3
4
5
REVERSE VOLTAGE VR (V)
2007. 12. 27
Revision No : 0
2/2