UTC 2SD882ANL NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to 2SB772ANL APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator 1 TO-92NL 1:EMITTER 2:COLLECTOR 3:BASE *Pb-free plating product number: 2SD882ANLK ABSOLUTE MAXIMUM RATINGS (Ta=25°C ) PARAMETERS SYMBOL RATINGS UNIT VCBO VCEO VEBO Pc Ic Ic IB Tj TSTG 40 30 5 1 3 7 0.6 150 -55 ~ +150 V V V W A A A °C °C Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector dissipation Collector current(DC) Collector current(PULSE) Base current Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified) PARAMETER Collector cut-off current Emitter cut-off current DC current gain(note 1) SYMBOL ICBO IEBO hFE1 hFE2 Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Current gain bandwidth product fT Output capacitance Cob Note 1:Pulse test:PW<300µs,Duty Cycle<2% UTC TEST CONDITIONS VCB=30V,IE=0 VEB=3V,Ic=0 VCE=2V,Ic=20mA VCE=2V,Ic=1A Ic=2A,IB=0.2A Ic=2A,IB=0.2A VCE=5V,Ic=0.1A VCB=10V,IE=0,f=1MHz MIN 30 100 TYP 200 150 0.3 1.0 80 45 UNISONIC TECHNOLOGIES CO. LTD MAX UNIT 1000 1000 nA nA 400 0.5 2.0 V V MHz pF 1 QW-R211-016,B UTC 2SD882ANL NPN EPITAXIAL SILICON TRANSISTOR CLASSIFICATION OF hFE2 RANK RANGE Q 100-200 P 160-320 E 200-400 TYPICAL PARAMETERS PERFORMANCE Fig.2 Derating curve of safe operating areas Fig.1 Static characteristics Fig.3 Power Derating IB =5mA I B=4mA S/ bl 50 im ite d d it e lim I B=3mA 0.4 100 n tio ip a ss 0.8 12 Power Dissipation (W) 1.2 Ic Derating (%) IB =9mA I B=8mA IB =7mA I B=6mA Di Collector current, Ic (A) 150 1.6 I B=2mA 8 4 I B=1mA 0 0 4 8 12 16 20 0 -50 Collector-Emitter voltage (V) Fig.4 Collector Output capacitance 10 10 Current gainbandwidth product, FT (MHz) Output Capacitance (pF) 10 I E=0 f=1MHz 1 0 10 0 -1 10 10 -2 200 -50 0 10 -3 10 2 1 0 10 -2 -1 10 10 0 1 10 150 200 10 10 mS 1m S 0 -1 10 10 -2 10 0 1 10 2 10 Collector-Emitter Voltage Collector current, Ic (A) Fig.7 DC current gain Ic(max),Pulse Ic(max),DC IB =8mA 10 100 Fig.6 Safe operating area 1 10 V CE =5V 10 50 Case Temperature,Tc (℃) 3 Collector-Base Voltage (v) 10 150 Fig.5 Current gainbandwidth product 3 2 100 S 10 50 1m 0. 10 0 Case Temperature, Tc (℃) Collector current, Ic (A) 0 Fig.8 Saturation Voltage 3 10 4 10 10 10 Saturation Voltage (mV) DC current Gain, HFE V CE =2V 2 1 0 0 10 10 1 10 2 10 3 Collector current, Ic (mA) UTC 10 4 10 10 V BE (sat) 3 2 V CE (sat) 10 10 1 0 0 10 10 1 10 2 10 3 10 4 Collector current, Ic (mA) UNISONIC TECHNOLOGIES CO. LTD 2 QW-R211-016,B UTC 2SD882ANL NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R211-016,B