UTC D882SS NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to B772SS 2 1 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator 3 MARKING SOT-23 D82 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETERS SYMBOL RATING UNIT VCBO VCEO VEBO Pc Pc Ic Ic IB Tj TSTG 40 30 5 10 1 3 7 0.6 150 -55 ~ +150 V V V W W A A A °C °C Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector dissipation( Tc=25°C) Collector dissipation( Ta=25°C) Collector current(DC) Collector current(PULSE) Base current Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector cut-off current Emitter cut-off current DC current gain(note 1) ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob VCB=30V,IE=0 VEB=3V,Ic=0 VCE=2V,Ic=20mA VCE=2V,Ic=1A Ic=2A,IB=0.2A Ic=2A,IB=0.2A VCE=5V,Ic=0.1A VCB=10V,IE=0,f=1MHz Collector-emitter saturation voltage Base-emitter saturation voltage Current gain bandwidth product Output capacitance UTC MIN 30 100 TYP 200 150 0.3 1.0 80 45 UNISONIC TECHNOLOGIES CO. LTD MAX UNIT 1000 1000 nA nA 400 0.5 2.0 V V MHz pF 1 QW-R206-018,A UTC D882SS NPN EPITAXIAL SILICON TRANSISTOR Note 1:Pulse test:PW<300µs,Duty Cycle<2% CLASSIFICATION OF hFE2 RANK RANGE Q 100-200 P 160-320 E 200-400 TYPICAL PARAMETERS PERFORMANCE Fig.2 Derating curve of safe operating areas Fig.1 Static characteristics Fig.3 Power Derating -IB=6mA -IB=5mA -IB=4mA S/ b 50 lim -IB=1mA 0 0 4 8 12 16 20 0 50 100 150 200 -50 Tc,Case Temperature(°C) Fig.4 Collector Output capacitance 10 0 -1 10 VCE=5V 2 10 IB=8mA 1 10 0 10 -3 10 -Ic,Collector current(A) FT(MHz), Current gainbandwidth product -2 10 -2 10 -1 10 10 0 1 10 Fig.7 DC current gain 150 200 Ic(max),Pulse Ic(max),DC 10 10 mS 1m S 0 -1 10 -2 10 10 0 1 10 2 10 Collector-Emitter Voltage Ic,Collector current(A) -Collector-Base Voltage(v) 100 S 1m 0. 1 10 50 Fig.6 Safe operating area 1 10 3 10 IE=0 f=1MHz 0 Tc,Case Temperature(°C) Fig.5 Current gainbandwidth product 3 10 0 10 4 0 -50 -Collector-Emitter voltage(V) 2 10 8 d ite -IB=2mA 0 Output Capacitance(pF) lim ite d n tio -IB=3mA 0.4 100 pa si is 0.8 12 Power Dissipation(W) 1.2 - Ic Derating(%) -IB=9mA -IB=8MA -IB=7mA D -Ic,Collector current(A) 150 1.6 Fig.8 Saturation Voltage 3 10 4 10 -Saturation Voltage(mV) DC current Gain,H FE VCE=-2V 2 10 1 10 0 10 0 10 1 10 2 10 3 10 -Ic,Collector current(mA) UTC 4 10 VBE(sat) 3 10 2 10 VCE(sat) 1 10 0 10 0 10 1 10 2 10 3 10 4 10 -Ic,Collector current(mA) UNISONIC TECHNOLOGIES CO. LTD 2 QW-R206-018,A UTC D882SS UTC NPN EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO. LTD 3 QW-R206-018,A UTC D882SS NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 4 QW-R206-018,A