PANJIT PJT7800

PPJT7800
20V N-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
20 V
Current
SOT-363
1A
Unit: inch(mm)
Features

RDS(ON) , [email protected], [email protected]<150mΩ

RDS(ON) , [email protected], [email protected]<215mΩ

RDS(ON) , [email protected], [email protected]<400mΩ

Advanced Trench Process Technology

Specially Designed for Switch Load, PWM Application, etc.

ESD Protected

Lead free in comply with EU RoHS 2011/65/EU directives.

Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data

Case : SOT-363 Package

Terminals : Solderable per MIL-STD-750, Method 2026

Approx. Weight : 0.0002 ounces, 0.006 grams

Marking : T00
Fig.161
(TOP VIEW)
o
Maximum Ratings and Thermal Characteristics (TA=25 C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNITS
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
+8
V
ID
1
A
IDM
4
A
350
mW
2.8
mW/ oC
Continuous Drain Current
Pulsed Drain Current
(Note 4)
Power Dissipation
Ta=25oC
o
Derate above 25 C
Operating Junction and Storage Temperature Range
PD
TJ,TSTG
-55~150
RθJA
357
o
C
Thermal resistance
-
Junction to Ambient (Note 3)
July 10,2013-REV.00
o
C/W
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PPJT7800
o
Electrical Characteristics (TA=25 C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
Static
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250uA
20
-
-
V
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID=250uA
0.7
0.8
1.1
V
VGS=4.5V, ID=1A
-
120
150
VGS=2.5V, ID=0.7A
-
160
215
VGS=1.8V, ID=0.3A
-
260
400
Drain-Source On-State Resistance
RDS(on)
mΩ
Zero Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0V
-
0.01
1
uA
Gate-Source Leakage Current
IGSS
VGS=+8V, VDS=0V
-
+2
+10
uA
-
1.6
-
-
0.31
-
-
0.41
-
-
105
-
-
25
-
-
15
-
-
5.8
-
25.8
-
42
-
-
32
-
-
-
1
A
0.87
1.2
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS=10V, ID=1A,
VGS=4.5V (Note 1,2)
VDS=10V, VGS=0V,
f=1.0MHZ
nC
pF
Switching
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
VDD=10V, ID=1A,
VGS=4.5V,
RG=6Ω
(Note 1,2)
ns
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
IS
VSD
--IS=1A, VGS=0V
NOTES:
1. Pulse width<300us, Duty cycle<2%
2.
3.
4.
Essentially independent of operating temperature typical characteristics.
RΘJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper
The maximum current rating is package limited
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PPJT7800
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
Fig.6 Body Dlode Characterlslcs
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PPJT7800
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Threshold Voltage Variation with Temperature.
Fig.9 Capacitance vs. Drain-Source Voltage.
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PPJT7800
PART NO PACKING CODE VERSION
PART NO PACKING
Package Type
Packing type
Marking
Version
PJT7800_R1_00001
SOT-363
3K pcs / 7” reel
T00
Halogen free
PJT7800_R2_00001
SOT-363
10K pcs / 13” reel
T00
Halogen free
CODE VERSION
MOUNTING PAD LAYOUT
July 10,2013-REV.00
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PPJT7800
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particular purpose, non-infringement and merchantability.
● Applications shown on the herein document are examples of standard use and operation. Customers are
responsible in comprehending the suitable use in particular applications. Panjit International Inc. makes no
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modification.
● The products shown herein are not designed and authorized for equipments requiring high level of reliability or
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July 10,2013-REV.00
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