MITSUBISHI <INTELLIGENT POWER MODULES> PM400DV1A060 FLAT-BASE TYPE INSULATED PACKAGE PM400DV1A060 FEATURE a) Adopting new 5th generation Full-Gate CSTBTTM chip b) The over-temperature protection which detects the chip surface temperature of CSTBTTM is adopted. c) Error output signal is possible from all each protection upper and lower arm of IPM. d) Compatible V-series package. • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for, short-circuit, over-temperature & under-voltage. APPLICATION General purpose inverter, servo drives and other motor controls PACKAGE OUTLINES Dimensions in mm 1 November. 2011 MITSUBISHI <INTELLIGENT POWER MODULES> PM400DV1A060 FLAT-BASE TYPE INSULATED PACKAGE INTERNAL FUNCTIONS BLOCK DIAGRAM C1 VP1 VCC CPI IN TjA TjK IGBT OUT Fo FPO FWDi AMP SINK NC GND SC C2E1 V PC V N1 VCC CNI IN TjA TjK IGBT OUT FNO FWDi AMP SINK Fo SC NC GND V NC E2 MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol VCES IC ICRM Ptot IE IERM Tj Parameter Collector-Emitter Voltage Conditions Collector Current Total Power Dissipation Emitter Current (Free wheeling Diode Forward current) VD=15V, VCIN=15V TC=25°C Pulse TC=25°C TC=25°C Pulse Junction Temperature Ratings 600 400 800 1262 400 800 -20 ~ +150 Unit V Ratings 20 20 20 20 Unit V V V mA A W A °C *: Tc measurement point is just under the chip. CONTROL PART Symbol VD VCIN VFO IFO Parameter Supply Voltage Input Voltage Fault Output Supply Voltage Fault Output Current Conditions Applied between : VP1-VPC, VN1-VNC Applied between : CPI-VPC, CNI-VNC Applied between : FPO-VPC, FNO-VNC Sink current at FPO, FNO terminals 2 November. 2011 MITSUBISHI <INTELLIGENT POWER MODULES> PM400DV1A060 FLAT-BASE TYPE INSULATED PACKAGE TOTAL SYSTEM Symbol VCC(PROT) VCC(surge) TC Tstg Visol Parameter Supply Voltage Protected by SC Supply Voltage (Surge) Module case operating temperature Storage Temperature Isolation Voltage Conditions VD =13.5V ~ 16.5V Inverter Part, Tj =+125°C Start Applied between : C1-E2, Surge value 60Hz, Sinusoidal, Charged part to Base plate, AC 1min, RMS Ratings Unit 400 V 500 V -20 ~ +100 °C -40 ~ +125 °C 2500 V *: TC measurement point is just under the chip. THERMAL RESISTANCE Symbol Parameter Rth(j-c)Q Rth(j-c)D Thermal Resistance Rth(c-s) Contact Thermal Resistance Conditions Junction to case, IGBT (per 1 element) Junction to case, FWDi (per 1 element) Case to heat sink, (per 1 module) Thermal grease applied (Note.1) (Note.1) (Note.1) Min. - Limits Typ. - Max. 0.099 0.153 - 0.018 - Min. 0.3 - Limits Typ. 1.90 1.90 1.7 0.8 0.4 0.4 1.0 0.3 - Max. 2.35 2.35 2.8 2.0 0.8 1.0 2.3 1.0 1 10 Unit K/W Note1: If you use this value, Rth(s-a) should be measured just under the chips. ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol VCEsat VEC ton trr tc(on) toff tc(off) ICES Parameter Conditions Collector-Emitter Saturation Voltage VD=15V, IC=400A VCIN=0V, Pulsed Emitter-Collector Voltage IE=400A, VD=15V, VCIN= 15V Switching Time VD=15V, VCIN=0V← →15V VCC=300V, IC=400A Tj=125°C Inductive Load Collector-Emitter Cut-off Current (Fig. 1) VCE=VCES, VD=15V , VCIN=15V (Fig. 5) 3 Tj=25°C Tj=125°C (Fig. 2) (Fig. 3,4) Tj=25°C Tj=125°C Unit V V s mA November. 2011 MITSUBISHI <INTELLIGENT POWER MODULES> PM400DV1A060 FLAT-BASE TYPE INSULATED PACKAGE CONTROL PART Symbol Parameter Conditions Limits Typ. 2 2 1.5 2.0 - Max. 4 4 1.8 2.3 - ID Circuit Current VD=15V, VCIN=15V Vth(ON) Vth(OFF) SC Input ON Threshold Voltage Input OFF Threshold Voltage Short Circuit Trip Level Short Circuit Current Delay Time Applied between : CPI-VPC, CNI-VNC -20≤Tj≤125°C, VD=15V (Fig. 3, 6) Min. 1.2 1.7 600 VD=15V (Fig. 3, 6) - 0.2 - Over Temperature Protection Detect Temperature of IGBT chip Supply Circuit Under-Voltage Protection -20≤Tj≤125°C Fault Output Current VD=15V, VFO=15V (Note.2) Fault Output Pulse Width VD=15V (Note.2) 135 11.5 1.0 20 12.0 12.5 10 1.8 12.5 0.01 15 - toff(SC) OT OT(hys) UVt UVr IFO(H) IFO(L) tFO VP1-VPC VN1-VNC Trip level Hysteresis Trip level Reset level Unit mA V A s °C V mA ms Note.2: Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to protect it. MECHANICAL RATINGS AND CHARACTERISTICS Symbol Ms Mt m Parameter Mounting Torque Conditions Mounting part Main terminal part screw : M6 screw : M6 Weight - Min. 3.92 3.92 - Limits Typ. 4.90 4.90 510 Max. 5.88 5.88 - Unit N・m g RECOMMENDED CONDITIONS FOR USE Symbol VCC Parameter Supply Voltage VD Control Supply Voltage VCIN(ON) VCIN(OFF) fPWM Input ON Voltage Input OFF Voltage PWM Input Frequency Arm Shoot-through Blocking Time tdead Conditions Applied across C1-E2 terminals Applied between : VP1-VPC, VN1-VNC (Note.3) Applied between : CPI-VPC, CNI-VNC Using Application Circuit of Fig. 8 For IPM’s each input signals (Fig. 7) Recommended value ≤ 400 Unit V 15.0±1.5 V ≤ 0.8 ≥ 4.0 ≤ 20 kHz ≥ 3.0 s V Note.3: With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/μs, Variation ≤ 2V peak to peak 4 November. 2011 MITSUBISHI <INTELLIGENT POWER MODULES> PM400DV1A060 FLAT-BASE TYPE INSULATED PACKAGE PRECAUTIONS FOR TESTING 1. Before applying any control supply voltage (VD), the input terminals should be pulled up by resistors, etc. to their corresponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise above VCES rating of the device. (These test should not be done by using a curve tracer or its equivalent.) C1(C2) NC V *1 V *1 VD F*O V F*O VD Ic V*C V*C E1(E2) E1(E2) Fig. 1 VCEsat Test C1 C1 V P1 FPO FPO VD1 CPI CPI VPC VPC Vcc NC E1C2 Vcc NC E1C2 V N1 VD2 Fig. 2 VEC Test NC V P1 VD1 IE-Ic V C*I C *I NC C1(C2) NC V N1 FNO FNO V D2 C NI CNI E2 VNC E2 VNC Ic Ic Fig. 3 Switching time and SC test circuit Fig. 4 Switching time test waveform C1(C2) NC A V *1 VD F*O pulse VCE C*I V*C E1(E2) Fig. 5 ICES Test Fig. 6 SC test waveform Fig. 7 Dead time measurement point example 5 November. 2011 MITSUBISHI <INTELLIGENT POWER MODULES> PM400DV1A060 FLAT-BASE TYPE INSULATED PACKAGE 20k ≥10µ C1 VP1 Vcc OUT FPO VD1 IF Fo CPI + Vcc SC - IN VPC ≥0.1µ OT GND E1C2 (U) 20k ≥10µ VN1 Vcc OUT FNO VD2 IF 20k IN VNC ≥0.1µ ≥10µ OT Fo CNI VD3 C1 Vcc OUT OT Fo CPI ≥0.1µ E2 VP1 FPO IF SC GND IN VPC SC GND E1C2 (V) 20k ≥10µ VN1 Vcc OUT FNO VD4 IF OT Fo CNI SC IN VNC ≥0.1µ M GND E2 C1 20k ≥10µ VP1 Vcc OUT FPO VD5 IF OT Fo CPI SC IN VPC ≥0.1µ GND E1C2 (W) 20k ≥10µ VN1 Vcc OUT FNO VD6 IF OT Fo CNI ≥0.1µ IN VNC SC GND E2 Fig. 8 Application Example Circuit NOTES FOR STABLE AND SAFE OPERATION ; • Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler. • Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler. • Fast switching opto-couplers: tPLH, tPHL ≤ 0.8μs, Use High CMR type. • Slow switching opto-coupler: CTR > 100% • Use 6 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the power supply. • Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between C1 and E2 terminal. 6 November. 2011 MITSUBISHI <INTELLIGENT POWER MODULES> PM400DV1A060 FLAT-BASE TYPE INSULATED PACKAGE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 400 2.5 VD=15V Tj=25°C COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) COLLECTOR CURRENT IC (A) 350 300 VD=13V 250 VD=17V VD=15V 200 150 100 50 Tj=25°C Tj=125°C 2 1.5 1 0.5 0 0 0.5 1.0 1.5 2.0 0 2.5 200 300 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (VS. VD) CHARACTERISTICS (TYPICAL) FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) 2.5 400 400 Ic=400A VD=15V 350 Tj=25°C Tj=25°C Tj=125°C EMITTER CURRENT IE (A) COLLECTO R-EMITTER SATURATION VOLTAGE VCEsat (V) 100 2.0 1.5 Tj=125°C 300 250 200 150 100 50 0 1.0 12 13 14 15 16 17 0 18 CONTROL VOLTAGE VD (V) 0.5 1 1.5 2 EMITTER-COLLECTOR VOLTAGE VEC (V) 7 November. 2011 MITSUBISHI <INTELLIGENT POWER MODULES> PM400DV1A060 FLAT-BASE TYPE INSULATED PACKAGE SWITCHING TIME (ton, toff) CHARACTERISTICS (TYPICAL) SWITCHING TIME(tc(on), tc(off))CHARACTERISTICS (TYPICAL) 10.0 1 SWITCHING TIME tc(on), tc(off) (μs) toff 1.0 ton Vcc=300V VD=15V Tj=25°C Tj=125°C Inductive Load 0.1 tc(on) Vcc=300V VD=15V Tj=25°C Tj=125°C Inductive Load 0.01 10 100 10 1000 100 1000 COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) SWITCHING ENERGY CHARACTERISTICS (TYPICAL) FREE WHEELING DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 200 0.5 20 Vcc=300V 18 Vcc=300V Eoff REVERSE RECOVERY TIME trr (μs) SWITCHING ENERGY Eon, Eoff (mJ/pulse) 0.1 VD=15V Tj=25°C 16 Tj=125°C 14 Inductive Load 12 10 8 6 Eon 4 2 0 0.45 Irr 180 VD=15V Tj=25°C 0.4 160 Tj=125°C Inductive Load 0.35 140 0.3 120 0.25 100 0.2 80 0.15 60 40 0.1 trr 0.05 20 0 0 100 200 300 400 0 COLLECTOR CURRENT IC (A) 100 200 300 0 400 REVERSE RECOVERY CURRENT Irr (A) SWITCHING TIME ton, toff (μs) tc(off) EMITTER CURRENT IE (A) 8 November. 2011 MITSUBISHI <INTELLIGENT POWER MODULES> PM400DV1A060 FLAT-BASE TYPE INSULATED PACKAGE ID VS. fc CHARACTERISTICS (TYPICAL) 12 50 Vcc=300V 8 Tj=25°C Tj=25°C 40 Tj=125°C 35 Tj=125°C Inductive Load 30 6 4 25 20 15 10 2 5 0 0 0 100 200 300 0 400 5 10 15 20 25 EMITTER CURRENT IE (A) fc (kHz) UV TRIP LEVEL VS. Tj CHARACTERISTICS (TYPICAL) SC TRIP LEVEL VS. Tj CHARACTERISTICS (TYPICAL) 20 2 18 1.8 UVt SC (SC of Tj=25°C is normalized 1) UVr 16 14 UVt / UVr (V) VD=15V 45 VD=15V 10 ID (mA) REVESE RECOVERY ENERGY Err (mJ/pulse) FREE WHEELING DIODE REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) 12 10 8 6 4 2 VD=15V 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 -50 0 50 100 -50 150 Tj (°C) 0 50 100 150 Tj (°C) 9 November. 2011 MITSUBISHI <INTELLIGENT POWER MODULES> PM400DV1A060 FLAT-BASE TYPE INSULATED PACKAGE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j-c) 1 0.1 0.01 Single Pulse IGBT Part; Per unit base: Rth(j-c)Q=0.099K /W FWDi Part; Per unit base: Rth(j-c)D=0.153K /W 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 TIME t (sec) 10 November. 2011