2SK3516-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Symbol Ratings Unit V V DS 450 A ID ±8 A ID(puls] ±32 V VGS ±30 A IAR *2 8 mJ EAS *1 193 kV/µs dVDS/dt *4 20 dV/dt *3 5 kV/µs PD Ta=25°C 1.67 W Tc=25°C 65 +150 Operating and storage Tch °C -55 to +150 temperature range Tstg °C *1 L=5.53mH, Vcc=45V *2 Tch < = BVDSS, Tch < = 150°C = -ID, -di/dt=50A/µs, Vcc < =150°C *3 IF< *4 VDS < = 450V Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Min. Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=450V VGS=0V VDS=360V VGS=0V VGS=±30V VDS=0V ID=4A VGS=10V Typ. 450 3.0 5.0 25 250 100 0.65 Tch=25°C Tch=125°C ID=4A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=4A VGS=10V 4 RGS=10 Ω VCC =225V ID=8A VGS=10V L=5.53mH Tch=25°C IF=8A VGS=0V Tch=25°C IF=8A VGS=0V -di/dt=100A/µs Tch=25°C Max. 10 0.50 8 800 1200 120 150 4.5 7 15 23 12 18 25 38 7 11 22 33 9.5 14.5 6.5 10 8 1.00 0.7 3.5 1.50 Units V V µA nA Ω S pF ns nC A V µs µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 1.92 75.0 Units °C/W °C/W 1 2SK3516-01L,S,SJ FUJI POWER MOSFET Characteristics 80 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=45V,I(AV)<=8A Allowable Power Dissipation PD=f(Tc) 300 70 250 60 200 EAV [mJ] PD [W] 50 40 30 150 100 20 50 10 0 0 0 25 50 75 100 125 150 0 25 50 Tc [°C] 75 100 125 150 starting Tch [°C] Typical Output Characteristics Typical Transfer Characteristic ID=f(VDS):80µs Pulse test,Tch=25°C ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C 30 28 26 24 10 20V 10V 22 8V ID [A] 18 16 ID[A] 20 14 1 7.5V 12 10 8 7.0V 6 4 VGS=6.5V 0.1 2 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 1 2 3 4 5 6 7 8 9 10 VGS[V] VDS [V] Typical Drain-Source on-state Resistance Typical Transconductance gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C RDS(on)=f(ID):80µs Pulse test, Tch=25°C 100 2.0 1.8 7.5V VGS=6.5V 7.0V 1.6 8V 1.4 gfs [S] RDS(on) [ Ω ] 10 10V 1.2 20V 1.0 0.8 1 0.6 0.4 0.2 0.1 0.0 0.1 1 10 ID [A] 0 5 10 15 20 25 ID [A] 2 2SK3516-01L,S,SJ 2.0 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch Drain-Source On-state Resistance RDS(on)=f(Tch):ID=4A,VGS=10V VGS(th)=f(Tch):VDS=VGS,ID=250µA 7.0 6.5 6.0 5.5 max. 5.0 VGS(th) [V] RDS(on) [ Ω ] 1.5 1.0 max. 4.5 4.0 3.5 min. 3.0 2.5 typ. 2.0 0.5 1.5 1.0 0.5 0.0 0.0 -50 -25 0 25 50 75 100 125 150 -50 Tch [° C] 0 25 50 75 100 125 150 Tch [°C] Typical Gate Charge Characteristics 24 -25 VGS=f(Qg):ID=8A, Tch=25°C 10n Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 22 20 Vcc= 90V 18 16 Ciss 1n 225V 360V C [F] VGS [V] 14 12 100p Coss 10 8 6 10p Crss 4 2 0 1p 0 10 20 30 40 50 60 10 -1 10 0 Qg [nC] 100 10 1 10 2 10 3 VDS [V] Typical Forward Characteristics of Reverse Diode Typical Switching Characteristics vs. ID IF=f(VSD):80µs Pulse test,Tch=25°C t=f(ID):Vcc=300V, VGS=10V, RG=10Ω 10 2 tr 10 t [ns] IF [A] td(off) td(on) 10 tf 1 1 10 0.1 0.00 0.25 0.50 0.75 1.00 VSD [V] 1.25 1.50 1.75 2.00 0 10 0 10 1 ID [A] 3 Zth(ch-c) [℃/W] 2SK3516-01L,S,SJ 10 1 10 0 FUJI POWER MOSFET Transient Thermal Impedance Zth(ch-c)=f(t):D=0 -1 10 -2 10 -3 10 -6 10 -5 10 10 -4 -3 -2 10 -1 10 0 10 10 t [sec] Maximum Avalanche Current Pulsewidth Avalanche current IAV [A] 10 10 1 10 0 10 10 IAV=f(tAV):starting Tch=25°C. Vcc=45V 2 Single Pulse -1 -2 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] Outline Drawings (mm) Type(S) Type(L) FUJI POWER MOS FET Type(SJ) FUJI POWER MOS FET FUJI POWER MOS FET OUT VIEW OUT VIEW See Note: 1. See Note: 1. See Note: 1. 4 Trademark Trademark Fig. 1. Trademark Fig. 1. Lot No. Lot No. Lot No. Type name Type name Type name PRE-SOLDER Fig. 1. Fig. 1. CONNECTION CONNECTION Solder Plating CONNECTION 1 2 2 DRAIN 3 SOURCE GATE DRAIN SOURCE 4 Note: 1. Guaranteed mark of avalanche ruggedness. 1 GATE 2 DRAIN 3 SOURCE Solder Plating Pre-Solder Pre-Solder 1 GATE 3 1 4 2 3 Notes Notes 1. ( ) : Reference dimensions. 2. The metal part is covered with the solder plating, part of cutting is without the solder plating. 1. ( ) : Reference dimensions. DIMENSIONS ARE IN MILLIMETERS. Note: 1. Guaranteed mark of avalanche ruggedness. 2. The metal part is covered with the solder plating, part of cutting is without the solder plating. DIMENSIONS ARE IN MILLIMETERS. Note: 1. Guaranteed mark of avalanche ruggedness. DIMENSIONS ARE IN MILLIMETERS. 4