2SK3681-01 200401 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power 11.6±0.2 Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-Repetitive Maximum avalanche current Repetitive or Maximum avalanche current Non-Repetitive Maximum avalanche energy Maximum Drain-Source dV/dt Peak diode recovery dV/dt Max. power dissipation Symbol Ratings V DS 600 VDSX 600 ID ±43 ID(puls] ±172 VGS ±30 IAS 43 IAR 21.5 EAS 808.9 dV DS/dt dV/dt PD Unit V V A A V A 20 5 2.50 600 +150 -55 to +150 Operating and storage Tch temperature range Tstg *1 See to Avalanche Current Graph *2 See to Avalanche Energy Graph *3 IF < = 150°C = -ID, -di/dt=50A/µs, VCC < = BVDSS, Tch < Remarks VGS=-30V Tch=25°C *1 A Tch< =150°C *1 mJ L=802µH VCC=60V *2 kV/s VDS< = 600V kV/µs *3 Ta=25°C W Tc=25°C °C °C Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Symbol V(BR)DSS VGS(th) Zero gate voltage drain current IDSS Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C VDS=600V VGS=0V T ch=125°C VDS=480V VGS=0V VGS=±30V VDS=0V ID=26A VGS=10V ID=21.5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=21.5A VGS=10V Min. 600 3.0 15 RGS=10 Ω VCC =300V ID=43A VGS=10V L=802µH Tch=25°C IF=43A VGS=0V Tch=25°C IF=43A VGS=0V -di/dt=100A/µs Tch=25°C Typ. Max. 5.0 25 250 100 0.16 10 0.12 30 5360 8040 680 1020 40 60 80 120 87 131 190 285 44 66 112 168 34 51 40 60 43 1.00 0.98 22.0 1.50 Units V V µA nA Ω S pF ns nC A V µs µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 0.208 50.0 Units °C/W °C/W 1 2SK3681-01 FUJI POWER MOSFET Characteristics Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C Allowable Power Dissipation PD=f(Tc) 800 120 110 700 100 600 20V 10V 8V 90 80 500 ID [A] PD [W] 70 400 60 7.0V 50 300 40 30 200 6.5V 20 100 VGS=6.0V 10 0 0 0 25 50 75 100 125 0 150 4 8 12 VDS [V] Tc [°C] Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 ° C 16 20 24 Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C 100 100 10 gfs [S] ID[A] 10 1 1 0.1 0 1 2 3 4 5 VGS[V] 6 7 8 9 0.1 10 0.1 1 10 100 ID [A] Drain-Source On-state Resistance RDS(on)=f(Tch):ID=26A,VGS=10V Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25 ° C 0.4 VGS=6V 0.5 6.5V 0.4 7.5V 8V 10V 0.2 20V RDS(on) [ Ω ] RDS(on) [ Ω ] 0.3 0.3 max. 0.2 typ. 0.1 0.1 0.0 0.0 0 20 40 60 ID [A] 80 100 -50 -25 0 25 50 Tch [°C] 75 100 125 150 2 2SK3681-01 FUJI POWER MOSFET Typical Gate Charge Characteristics VGS=f(Qg):ID=43A,Tch=25 °C Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA 14 7.0 6.5 12 6.0 Vcc= 120V 5.5 max. 300V 10 4.5 480V 8 4.0 VGS [V] VGS(th) [V] 5.0 3.5 min. 3.0 6 2.5 2.0 4 1.5 1.0 2 0.5 0.0 0 -50 -25 0 25 50 75 Tch [°C] 100 125 150 0 5 10 4 40 60 80 100 120 140 160 180 200 Qg [nC] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25 ° C Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10 20 1000 100 10 3 10 2 IF [A] C [pF] Ciss 10 Coss 1 Crss 10 1 10 0 10 1 10 2 10 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 3 VDS [V] VSD [V] Maximum Avalanche Energy vs. starting Tch I(AV)=f(starting Tch):Vcc=60V Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 Ω 3 60 10 50 td(off) 40 2 10 Non-Repetitive (Single Pulse) IAV [A] t [ns] td(on) tf tr 30 Repetitive 20 1 10 10 0 0 10 -1 10 0 1 10 10 ID [A] 2 10 0 25 50 75 100 125 150 175 200 starting Tch [°C] 3 2SK3681-01 FUJI POWER MOSFET Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)<=43A 2500 IAS=18A 2000 EAV [mJ] 1500 IAS =26A 1000 IAS=43A 500 0 0 25 50 75 100 125 150 starting Tch [°C] 10 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25° C,Vcc=60V 2 Avalanche Current I AV [A] Single Pulse 10 1 10 0 10 -1 10 -2 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] Maxmum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 1 10 0 Zth(ch-c) [° C/W] 10 10 -1 10 -2 10 -3 -6 10 10 -5 10 -4 -3 10 -2 10 -1 10 10 0 t [sec] http://www.fujielectric.co.jp/denshi/scd/ 4