POWEREX PP150B120

TENTATIVE
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
PP150B120
TM
POW-R-PAK
150A / 1200V
H-Bridge IGBT Assembly
Description:
TM
The Powerex POW-R-PAK is a configurable IGBT
based power assembly that may be used as a
converter, chopper, half or full bridge, or three phase
inverter for motor control, power supply, UPS or other
power conversion applications.
The power assembly is mounted on a forced aircooled heatsink and features state-of-the-art Powerex
F-series trench gate IGBTs with low conduction and
switching losses for high efficiency operation. The
TM
POW-R-PAK includes a low inductance laminated
bus structure, optically isolated gate drive interfaces,
isolated gate drive power supplies, and a DC-link
capacitor bank. The control board provides a
simple user interface along with built-in
protection features including overvoltage,
undervoltage lockout, overcurrent,
overtemperature, and short circuit detection.
Depending on application characteristics the
TM
POW-R-PAK is suitable for operation with DC
bus voltages up to 800VDC and switching
frequencies above 20kHz.
Schematic
PP150B120(-)
Features:
High performance IGBT inverter bridge
Integrated gate drive with fault monitoring
& protection
System status / troubleshooting LEDs to
verify or monitor proper operation
Isolated gate drive power supplies
Low inductance laminated bus
Output current measurement & feedback
Superior short circuit detection & shoot
through prevention
-1-
PP150B120
TENTATIVE
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
TM
POW-R-PAK
150A / 1200V
H-Bridge IGBT Assembly
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
General
Symbol
IGBT Junction Temperature
Units
Tj
-40 to +150
°C
Tstg
-40 to +125
°C
Operating Temperature
Top
-25 to +85
°C
Voltage Applied to DC terminals
VCC
800
Volts
Isolation Voltage, AC 1 minute, 60Hz sinusoidal
Viso
2500
Volts
Collector Current (TC = 25°C)
IC
150
Amperes
Peak Collector Current (Tj < 150°C)
ICM
300
Amperes
Emitter Current
IE
150
Amperes
Peak Emitter Current
IEM
300
Amperes
Maximum Collector Dissipation (Tj < 150°C)
Pc
520
Watts
Unregulated +24V Power Supply
30
Volts
Regulated +15V Power Supply
18
Volts
PWM Signal Input Voltage
20
Volts
Fault Output Supply Voltage
30
Volts
Fault Output Current
50
mA
Storage Temperature
IGBT Inverter
Gate Drive Board
IGBT Inverter Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Collector Cutoff Current
Collector – Emitter Saturation Voltage
Emitter – Collector Voltage
Symbol
Test Conditions
Min
Typ
Max
Units
ICES
VCE = VCES, VGE = 0V
-
-
1
mA
VCE(sat)
VEC
IC = 150A, Tj = 25°C
-
1.8
2.4
Volts
IC = 150A, Tj = 125°C
-
1.9
-
Volts
IE = 150A
-
-
3.2
Volts
-
-
150
ns
td(on)
Inductive Load Switching Times
tr
td(off)
tf
Diode Reverse Recovery Time
trr
Diode Reverse Recovery Charge
Qrr
DC Link Capacitance
PP150B120(-)
VCC = 600V
IC = 150A
VGE = 15V
RG = 2.1Ω
-
-
80
ns
-
-
450
ns
-
-
300
ns
-
-
150
ns
6.0
-
µC
-
3300
µF
-2-
PP150B120
TENTATIVE
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
TM
POW-R-PAK
150A / 1200V
H-Bridge IGBT Assembly
Gate Drive Board Electrical Characteristics
Characteristics
Unregulated +24V Power Supply
Regulated +15V Power Supply
PWM Input On Threshold
Min
Typ
Max
Units
20
24
30
Volts
14.4
15
18
Volts
12
15
PWM Input Off Threshold
Volts
0
Output Overcurrent Trip
2
Volts
225
Overtemperature Trip
96
Amperes
98
Overvoltage Trip
100
°C
920
Volts
DC Link Voltage Feedback
See Figure Below
Volts
Heatsink Temperature Feedback
See Figure Below
Volts
Output Current Feedback
See Figure Below
Volts
DC Link Feedback
Heatsink Temperature Feedback
Output Current Feedback
120
800
700
600
500
400
300
200
100
0
400
100
Output Current (Amps)
900
Heatsink Temperature (ºC)
DC Link Voltage (Volts)
1000
80
60
40
20
0
0
1
2
3
4
5
6
7
8
9
10
350
300
250
200
150
100
50
0
0
1
2
Feedback Voltage (Volts)
3
4
5
6
7
8
9
10
0
1
2
Feedback Voltage (Volts)
3
4
5
6
7
8
9
Feedback Voltage (Volts)
Thermal and Mechanical Characteristics
Characteristics
Symbol
Test Conditions
Min
Typ
Max
Units
IGBT Thermal Resistance, Junction to Case
Rth(j-c)Q
Per IGBT ½ module
-
0.11
0.21
°C/W
FWD Thermal Resistance, Junction to Case
Rth(j-c)D
Per FWD ½ module
0.24
°C/W
-
0.020
-
°C/W
Contact Thermal Resistance
Rth(c-f)
Heatsink Thermal Resistance
Rth(f-a)
1500 LFM airflow
0.040
°C/W
Mounting Torque, AC terminals
75
90
in-lb
Mounting Torque, DC terminals
130
150
in-lb
Mounting Torque, Mounting plate
130
150
in-lb
Weight
21
PP150B120(-)
lb
-3-
10
TENTATIVE
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
PP150B120
TM
POW-R-PAK
150A / 1200V
H-Bridge IGBT Assembly
Gate Drive Board Interface Signal Definitions
Pin
Signal Name
Description
1
Shield
Connected to circuit ground
2
PWM A-
0-15 V signal controlling the duty cycle of A- IGBT
3
Phase A Error
Open collector output, external pull-up resistor required
LOW = No Error; Floating = Phase A overcurrent or short circuit
4
PWM A+
0-15 V signal controlling the duty cycle of A+ IGBT
5
PWM B-
1
0-15 V signal controlling the duty cycle of B- IGBT
6
Phase B Error
Open collector output, external pull-up resistor required
LOW = No Error; Floating = Phase B overcurrent or short circuit
7
PWM B+
0-15 V signal controlling the duty cycle of B+ IGBT
11
Overtemp1
Open collector output, external pull-up resistor required
LOW = No Error; Floating = heatsink overtemp
12
Not Connected
13
DC Link Voltage
1
8
9
10
Analog voltage representation of DC link voltage
14
2
24 VDC input power
20 – 30 VDC input voltage range
15
24 VDC input power2
20 – 30 VDC input voltage range
16
2
14.4 – 18 VDC input voltage range
2
15 VDC input power
17
15 VDC input power
14.4 – 18 VDC input voltage range
18
GND
Ground reference for 15 and 24 VDC inputs
19
GND
Ground reference for 15 and 24 VDC inputs
20
Heatsink Temperature
Analog voltage representation of heatsink temperature
3
21
GND
Tied to pins 18 and 19
22
Iout Phase A
Analog voltage representation of phase A output current
23
GND3
Tied to pins 18 and 19
24
Iout Phase B
Analog voltage representation of phase B output current
25
26
Notes:
1.
2.
3.
Open collectors can be pulled up to 30 V max and sink 50mA continuous.
Do not connect a 15 VDC and 24 VDC source to the unit at the same time, use one or the other.
GND signals to be used for analog feedback signals, i.e. twisted pair with Iout Phase A.
Gate Drive Board Interface Connector
Description
Symbol
Type
Manufacturer
J1
0.100” x 0.100” latching header, 26 pin
3M# 3429-6002 or equivalent
Recommended Mating Socket
-
0.100” x 0.100” IDC socket, 26 pin
3M# 3399-7600 or equivalent
Recommended Strain Relief
-
Plastic strain relief
3M# 3448-3026 or equivalent
Gate Drive Board Interface Header
PP150B120(-)
-4-
PP150B120
TENTATIVE
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
TM
POW-R-PAK
150A / 1200V
H-Bridge IGBT Assembly
Performance Curves
Effective Output Current vs. Carrier Frequency (Typical)
140
IGBT Junction Temperature
130
120
110
100
10kHz
90
5kHz
80
1kHz
70
60
50
40
40
60
80
100
120
140
160
180
200
220
Iout ARMS
Condition
Ambient Temperature
DC Bus Voltage
Symbol
Value
Units
TA
40
°C
Volts
VCC
600
Load Power Factor
cos φ
0.8
IGBT Saturation Voltage
VCE(sat)
Typical @ TJ = 125°C
Volts
ESW
Typical @ TJ = 125°C
mJ
1500
LFM
IGBT Switching Loss
Airflow
Switching Conditions
PP150B120(-)
-
1 phase PWM, 60Hz sinusoidal output
-5-
TENTATIVE
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
PP150B120
TM
POW-R-PAK
150A / 1200V
H-Bridge IGBT Assembly
Mechanical Drawing
PP150B120(-)
-6-