SFH618A/628A PHOTOTRANSISTOR, 5.3 kV TRIOS LOW CURRENT INPUT OPTOCOUPLER Package Dimensions in Inches (mm) FEATURES • Very High CTR at IF=1 mA, VCE=0.5 V – SFH618A-2, 63–125% – SFH618A-3, 100–200% – SFH618A-4, 160–320% – SFH618A-5, 250–500% – SFH628A-2, 63–200% – SFH628A-3, 100–320% – SFH628A-4, 160–500% • Specified Minimum CTR at IF=-0.5 mA – SFH618A, VCE=1.5 V: ≥32% (typical 120%) – SFH628A, VCE=1.5 V: ≥50% (typical 160%) • Good CTR Linearity Depending on Forward Current • Low CTR Degradation • High Collector-Emitter Voltage, VCEO=55 V • Isolation Test Voltage, 5300 VACRMS • Low Coupling Capacitance • Field-Effect Stable by TRIOS (TRansparent IOn Shield) • End-Stackable, 0.100"(2.54 mm) Spacing • High Common-Mode Interference Immunity (Unconnected Base) • Underwriters Lab File #52744 • VDE 0884 Available with Option 1 SMD Option — See SFH6186/6286 Data Sheet APPLICATIONS • Telecom • Industrial Controls • Battery Powered Equipment • Office Machines DESCRIPTION The SFH618A/628A feature a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package. The coupling devices are designed for signal transmission between two electrically separated circuits. The couplers are end-stackable with 2.54 mm spacing. Therefore multicouplers can easily be implemented and conventional multicouplers can be replaced. Creepage and clearance distances of >8 mm are achieved with option 6. This version complies with IEC 950 (DIN VDE 0805) for reinforced insulation up to an operation voltage of 400 VRMS or DC. 2 1 Pin One I.D. .268 (6.81) .255 (6.48) SFH618A Anode 1 4 Collector 3 Emitter Cathode 2 SFH628A 3 4 .190 (4.83) .179 (4.55) Anode/ Cathode 1 4 Collector Cathode/ Anode 2 3 Emitter .305 (7.75) .045 (1.14) .030 (.76) .150 (3.81) .130 (3.30) .135 (3.43 .115 (2.92 4° Typ. .022 (.56) .018 (.46) 10° Typ. .040 (1.02) .030 (.76 ) 3°–9° 1.00 (2.54) Typ. .012 (.30) .008 (.20) Maximum Ratings Emitter Reverse Voltage (SFH618A)6 V DC Forward Current (SFH628A: ± ) 50 mA Surge Forward Current (tP≤10 µs) (SFH628A: ± )2.5 A Total Power Dissipation70 mW Detector Collector-Emitter Voltage55 V Emitter-Collector Voltage7 V Collector Current50 mA Collector Current (tP≤1 ms)100 mA Total Power Dissipation150 mW Package Isolation Test Voltage between Emitter and Detector, refer to Climate DIN 40046, part 2, Nov. 745300 VACRMS Creepage≥7 mm Clearance≥7 mm Insulation Thickness between Emitter and Detector≥0.4 mm Comparative Tracking Index per DIN IEC 112/VDE0 303, part 1175 Isolation Resistance VIO=500 V, TA=25°C≥1012 Ω VIO=500 V, TA=100°C≥1011 Ω Storage Temperature Range–55 to +150°C Ambient Temperature Range–55 to +100°C Junction Temperature100°C Soldering Temperature (max. 10 s. Dip Soldering Distance to Seating Plane ≥1.5 mm)260°C Specifications subject to change. 5–246 Characteristics (TA=25°C) Description Symbol Min. Typ. Max. Unit Condition VF 1.1 1.5 V IF=5 mA 10 Emitter Forward Voltage Reverse Current SFH618A IR .01 Capacitance SFH618A SFH628A C0 25 45 pF RthJA 1070 K/W Collector-Emitter Leakage Current ICEO 10 Capacitance CCE Thermal Resistance RthJA Thermal Resistance VR=6 V VR=0 V, f=1 MHz Detector 200 nA VCE=10 V 7 pF VCE=5 V, f=1 MHz 500 K/W Package 0.25 0.4 0.25 0.4 0.25 0.4 IC=0.8 mA, IF=1 mA SFH618A-5 0.25 0.4 IC=1.25 mA, IF=1 mA SFH628A-2 0.25 0.4 IC=0.5 mA, IF=± 1 mA 0.25 0.4 0.25 0.4 SFH618A-2 Collector-Emitter Saturation Voltage SFH618A-3 SFH618A-4 Collector-Emitter Saturation Voltage SFH628A-3 SFH628A-4 Coupling Capacitance VCESAT VCESAT 0.25 CC 63 SFH618A-2 SFH618A-2 IC/IF 32 SFH618A-3 Coupling Transfer Ratio IC/IF 50 SFH618A-4 IC/IF 80 SFH618A-5 IC/IF 125 SFH628A-2 IC/IF 32 SFH628A-3 IC/IF 50 500 IC/IF 80 % % 500 250 IF=0.5 mA, VCE=1.5 V IF=± 0.5 mA, VCE=1.5 V IF=± 1 mA, VCE=0.5 V 320 160 IF=0.5 mA, VCE=1.5 V IF=± 1 mA, VCE=0.5 V 200 100 IF=0.5 mA, VCE=1.5 V IF=1 mA, VCE=0.5 V % 300 IF=0.5 mA, VCE=1.5 V IF=1 mA, VCE=0.5 V % 200 160 SFH628A-4 SFH628A-4 320 100 SFH628A-3 Coupling Transfer Ratio IC=1.25 mA, IF=± 1 mA IF=1 mA, VCE=0.5 V % 120 63 SFH628A-2 IC=0.8 mA, IF=± 1 mA IF=1 mA, VCE=0.5 V % 200 250 SFH618A-5 V IC=0.5 mA, IF=1 mA pF 75 160 SFH618A-4 V 125 100 SFH618A-3 IC=0.32 mA, IF=1 mA IF=± 0.5 mA, VCE=1.5 V IF=± 1 mA, VCE=0.5 V % IF=± 0.5 mA, VCE=1.5 V SFH618A/628A 5–247 Switching Times Measurement Figure 1. Test circuit—SFH618A Figure 2. Test circuit—SFH628A ±IF VCC = 5 V Input RL RL VCC IC VOUT 47Ω Figure 3. Switching times, typical VCC=5 V, IC=2 mA, RL=100Ω, TA=25°C Figure 4. Test circuit and waveforms Turn-on Time tON 6.0 µs Rise Time tR 3.5 µs Turn-off Time tOFF 5.5 µs Fall Time tF 5.0 µs INPUT 0 ton toff tpdon OUTPUT 0 10% tpdof td tr tr ts 10% 50% 50% 90% 90% SFH618A/628A 5–248 Figure 1. Current transfer ratio (typ.) VCE=0.5 V, CTR=f(TA) Figure 2. Current transfer ratio (typ.) VCE=1.5 V, CTR=f(TA) Figure 3. Diode forward voltage TA=25°C, VF=f(IF) Figure 4. Diode forward voltage IF=1 mA, VF=f(TA) Figure 5. Transistor capacitance TA=25°C, f=1 MHz, CCE=f(VCE) Figure 6. Output characteristics TA=25°C, CE=f(VCE, IF) Figure 7. Permissible forward current diode IF=f(TA) Figure 8. Permissible power dissipation PTOT=f(TA) Figure 9. Switching times (typ.) TA=25°C, IF=1 mA, VCC=5 V ton, tr, toff, tf=f(RL) SFH618A/628A 5–249