QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL65D6SA Signature of Approval Approvaed by Checked by Issued by Approval by Customer 315-9, Chunheung-ri, Sungger-eup, Chunan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL65D6SA InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd. 2003. Rev 0 ♦OVERVIEW QL65D6SA is a MOCVD grown 650nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 5mW for optoelectronic devices such as Bar Code Reader. ♦APPLICATION - Optical Leveler - Laser Module - Bar Code Reader ♦FEATURES - Visible Light Output : λp = 650 nm - Optical Power Output : 5mW CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode ♦ELECTRICAL CONNECTION Bottom View Pin Configuration ♦ABSOLUTE MAXIMUM RATING at Tc=25°C Items Symbols Optical Output Power Laser Diode Reverse Voltage Photo Diode Reverse Voltage Values Unit P 5 mW V 2 V V 30 V Operating Temperature Topr −10 ~ +60 °C Storage Temperature Tstg −40 ~ +85 °C ♦ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25°C Items Symbols Min. Typ. Max. Unit Condition Optical Output Power Po - 5 - mW - Threshold Current Ith - 30 45 mA - Operating Current Iop - 40 55 mA Po=5mW Slope Efficiency SE 0.4 0.5 0.8 mW/mA 3~5 mW Operating Voltage Vop - 2.2 2.6 V Po=5mW Lasing Wavelength λp 650 655 660 nm Po=5mW θ 7 8.5 10 deg Po=5mW θ⊥ 26 28 32 deg Po=5mW ∆θ - - ±1.5 deg Po=5mW ∆θ ⊥ - - ±2.5 deg Po=5mW Im 0.1 0.2 0.5 mA Po=5mW K-LI 10 % As 10 µm - ±60 µm Beam Divergence Beam Angle Monitor Current KINK Astigmatism ∆X, ∆Y, ∆Z Optical Distance - PD DARK CURRENT ID 5 10 nA VR=10V PD Capacitance Ct -5 -10 pF Vrd=0.5V f=1MHZ NOTICE : QL65D6SA to be operated on APC circuit. The above product specifications are subject to change without notice. ♦EXAMPLE of REPRESENTATIVE CHARACTERISTICS Optical Output Power vs. Foward Current Output Power P [ mW] 5 25℃ 40℃ 60℃ 30℃ 50℃ 4 3 2 1 0 0 10 20 30 40 50 60 70 80 90 100 Forward Current IF [mA] Wavelength vs. Temperature Wavelength, λ [nm] 680 675 670 665 660 655 650 10 20 30 40 50 60 70 Temperature, Tc [`C] Far Field Pattern Relative Intensity 1 0.8 0.6 0.4 0.2 0 -50 -40 -30 -20 -10 0 Angle [deg] 10 20 30 40 50 Monitor currnet, Im [mA] Monitor Current vs. Optical Output Power 0.12 0.1 0.08 0.06 0.04 0.02 0 0 1 2 3 4 5 Optical output power, Po [mW] Operating Voltagr, Vop [V] Operating Voltage vs. Temp 2.4 2.35 2.3 2.25 2.2 2.15 2.1 2.05 2 10 20 30 40 50 60 70 Temperature, Tc [V] Threshold Current, Ith [mA] Threshold Current vs. Temp 100 10 10 20 30 40 Temperature, Tc [`C] 50 60 70 ♦PACKAGE DIMENSION ♦PACKING