Data Sheet 10V Drive Nch MOSFET R4008AND Structure Silicon N-channel MOSFET Dimensions (Unit : mm) CPT3 6.5 5.1 2.3 0.5 0.9 1.5 5.5 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy. 2.5 0.75 0.65 0.9 2.3 (1) (2) (3) 0.8Min. (1) Gate (2) Drain (3) Source 9.5 1.5 (SC-63) <SOT-428> 2.3 0.5 1.0 Application Switching Packaging specifications Type Package Code Basic ordering unit (pieces) R4008AND Inner circuit Taping TL 2500 ∗1 (1) Gate (2) Drain (3) Source Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage VDSS Gate-source voltage VGSS Continuous Drain current Source current (Body Diode) ID Pulsed IDP Continuous IS Limits Unit 400 30 V V *4 8 *1 *4 32 48 8 *1 *2 (3) 1 BODY DIODE A A Avalanche current IAS *3 Avalanche energy *3 4.3 mJ Power dissipation EAS PD *5 Channel temperature Range of storage temperature Tch Tstg 20 150 55 to 150 W C C ISP (2) A 32 48 4 Pulsed (1) *2 A A *1 Pw10s, Duty cycle1% *2 Pw≤1s, Duty cycle≤1% Limited by Safe Operating Area.(VDS≤30V) *3 L 500H, VDD=50V, RG=25, T ch=25C *4 Limited only by maximum temperature allowed. *5 TC=25C Thermal resistance Parameter Channel to Case www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Symbol Rth (ch-c) Limits 6.25 Unit C / W 1/5 2011.10 - Rev.A Data Sheet R4008AND Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol Min. Max. Unit - - 100 nA VGS=30V, VDS=0V 400 - - V ID=1mA, VGS=0V IGSS Drain-source breakdown voltage V(BR)DSS Conditions Typ. IDSS - - 100 A VDS=400V, VGS=0V VGS (th) 2.5 - 4.5 V VDS=10V, ID=1mA RDS (on)* - 0.73 0.95 ID=4A, VGS=10V l Yfs l* 2 - - S VDS=10V, ID=4A Input capacitance Ciss - 500 - pF VDS=25V Output capacitance Coss - 280 - pF VGS=0V Reverse transfer capacitance Crss - 25 - pF f=1MHz Turn-on delay time td(on) * tr * - 20 - ns VDD 200V, ID=4A - 20 - ns VGS=10V td(off) * tf * - 48 - ns RL=50 - 16 - ns RG=10 Qg * Qgs * Qgd * - 15 - nC VDD 200V - 3.5 7 - nC nC ID=8A VGS=10V Min. - Typ. - Max. 1.5 Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed Body diode characteristics (Source-Drain) Parameter Forward Voltage Symbol VSD * Conditions Unit V IS=8A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.10 - Rev.A Data Sheet R4008AND Electrical characteristic curves Fig.1 Maximum Safe Operating Aera 1 8 VGS=10.0V VGS=8.0V VGS=7.0V VGS=6.5V VGS=6.0V 0.8 10 PW =100us 1 PW =1ms 0.1 0.6 0.5 0.4 VGS=4.5V 0.3 100 3 GATE THRESHOLD VOLTAGE: VGS(th) (V) VDS= 10V Pulsed 10 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 0.1 0.01 0.001 2 3 4 5 6 7 8 0 4 3 2 1 0 -50 0 50 100 ID= 8.0A ID= 4.0A 0.5 0.0 5 10 15 GATE-SOURCE VOLTAGE : VGS (V) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 7 8 9 10 0.1 0.1 1 2.5 100 Fig.9 Forward Transfer Admittance vs. Drain Current 100 VGS= 10V Pulsed 2 ID= 8.0A 1.5 1 ID= 4.0A 0.5 0 -50 10 DRAIN CURRENT : ID (A) FORWARD TRANSFER ADMITTANCE : |Yfs| (S) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 1.5 6 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 150 3 2.0 5 1 Fig.8 Static Drain-Source On-State Resistance vs. Channel Temperature Ta=25℃ pulsed 4 VGS= 10V Pulsed CHANNEL TEMPERATURE: Tch (℃) 3.0 0 3 10 5 9 2 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current VDS= 10V ID= 1mA Fig.7 Static Drain-Source On-State Resistance vs. Gate Source Voltage 1.0 1 Drain-Source Voltage : VDS [V] 6 GATE-SOURCE VOLTAGE : VGS (V) 2.5 VGS=4.5V Fig.5 Gate Threshold Voltage vs. Channel Temperature 100 1 1 Drain-Source Voltage : VDS [V] Fig.4 Typical Transfer Characteristics 0 VGS=5.0V 0 DRAIN-SOURCE VOLTAGE : VDS ( V ) 1 2 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1000 Ta=25℃ pulsed 4 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 10 VGS=6.0V 5 0 1 DRAIN CURRENT : ID (A) 6 Ta=25℃ pulsed 0.1 0.01 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) VGS=5.0V 0.2 PW =10ms Ta=25℃ pulsed 0.7 VGS=10.0V VGS=8.0V VGS=7.0V VGS=6.5V 7 Drain Current : ID [A] 0.9 Drain Current : ID [A] DRAIN CURRENT : ID (A) 100 Fig.3 Typical Output Characteristics (Ⅱ) Fig.2 Typical Output Characteristics (Ⅰ) Operation in this area is limited by RDS(ON) 0 50 100 150 CHANNEL TEMPERATURE: Tch (℃) 3/5 VDS= 10V Pulsed 10 1 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 0.1 0.01 0.01 0.1 1 10 100 DRAIN CURRENT : ID (A) 2011.10 - Rev.A Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage Fig.11 Typical Capacitance vs. Drain-Source Voltage Fig.12 Dynamic Input Characteristics 15 10000 10 1 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 0.1 1000 GATE-SOURCE VOLTAGE : VGS (V) VGS= 0V Pulsed CAPACITANCE : C (pF) SOURCE CURRENT : IS (A) 100 Ciss 100 Coss 10 Crss Ta= 25℃ f= 1MHz VGS= 0V 1 0.01 0 0.5 1 Ta= 25°C VDD= 200V ID= 8A RG= 10Ω Pulsed 10 5 0 0.1 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) 1 10 100 1000 DRAIN-SOURCE VOLTAGE : VDS (V) Fig.13 Reverse Recovery Time vs.Source Current 0 5 10 15 20 TOTAL GATE CHARGE : Qg (nC) Fig.14 Switching Characteristics 10000 1000 REVERSE RECOVERY TIME: trr (ns) Data Sheet R4008AND Ta= 25℃ di / dt= 100A / μs VGS= 0V Pulsed VDD≃200V VGS=10V RG=10W Switching Time : t [ns] 1000 100 Ta=25℃ Pulsed tf td(off) 100 tr 10 td(on) 1 10 0.1 1 10 SOURCE CURRENT : IS (A) 0.01 100 0.1 1 10 Drain Current : ID [A] Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width NORMARIZED TRANSIENT THERMAL RESISTANCE : r(t) 10 1 Ta = 25℃ Single Pulse Rth(ch-a)(t) = r(t)×Rth(ch-a) Rth(ch-a) = 79.2℃/W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/5 2011.10 - Rev.A Data Sheet R4008AND Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) ton Fig.1-1 Switching Time Measurement Circuit 90% td(off) tr tf toff Fig.1-2 Switching Waveforms VG VGS ID VDS RL Qg VGS D.U.T. IG(Const.) Qgs Qgd VDD RG Charge Fig.2-2 Gate Charge Waveform Fig.2-1 Gate Charge Measurement Circuit VGS IAS VDS V(BR)DSS D.U.T. RG L VDD IAS VDD EAS = Fig.3-1 Avalanche Measurement Circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 2 L IAS 2 V(BR)DSS V(BR)DSS - VDD Fig.3-2 Avalanche Waveform 5/5 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A