RICOH R5511X

LDO REGULATOR with RESET
R5511x SERIES
NO. EA-111-0407
OUTLINE
The R5511x Series are CMOS-based voltage regulator(LDO) ICs equipped with a voltage detector(VD). LDO
function of the R5511x has features of high ripple rejection, low dropout voltage, high output voltage accuracy,
and low supply current. Each of these ICs consists of a voltage reference unit, an error amplifier, resistors for
setting output voltage, a current limit circuit, a voltage detector, and a chip enable circuit. The output of built-in
voltage detector is Nch open drain type. (With the mask option CMOS output type is also available.)
The output voltage and the detector threshold voltage are fixed in the IC. Low supply current by the merit of
CMOS process and the built-in transistor with low ON-resistance make low dropout voltage. These regulators in
the R5511x Series are remarkable improvement on the current regulators in terms of ripple rejection, input
transient response, and load transient response. Furthermore, the R5511x series can supervise input voltage
(the input voltage means the input level for VDD or VSEN pin) with built-in detector. Thus, the R5511x series are
suitable not only for cellular handsets but also for power supply for CD-drives, DVD-drives, and so forth.
Since the packages for these ICs are the SON-6, SOT-23-5, SOT-89-5 package, high density mounting of the
ICs on boards is possible.
FEATURES
•
•
•
•
•
Low Supply Current ............................................................. Typ. 50µA (VR)
Low Standby Current ........................................................... Typ. 0.1µA (VR)
High Ripple Rejection .......................................................... Typ. 75dB (f=1kHz) (VR)
Output Current ..................................................................... Min. 300mA
High Output Voltage Accuracy ..................±1.5% (VOUT >
= 2.0V), 30mV(2.0V>VOUT>1.5V), 2.0%(1.5V >
= VOUT)
>
±1.5% (VDET >
2.0V),
30mV(2.0V>V
DET
>1.5V),
2.0%(1.5V
=
= VDET)
• Low Dropout Voltage............................................................ Typ. 0.1V (VOUT=3.0V, IOUT=100mA) (VR)
• Built-in Current Limit Circuits (VR)
• Low Temperature-drift Coefficient of Output Voltage ........... Typ. ±100ppm/°C
• Absolute Maximum Voltage ................................................. 6.5V
• Small Packages ................................................................. SON-6,SOT-23-5, SOT-89-5
• Built-in Reset Delay Circuits ................................................ A: (Delay time=1ms, Hysteresis5%)
B: (Delay time=20ms, Hysteresis5%)
C: (Delay time; 60ms, Hysteresis5%)
D: (Delay time; 240ms, no Hysteresis)
∗Delay time:120ms/ With or without hysteresis can be designated with user’s request
• Ceramic Capacitor Recommendation.................................. CIN=COUT=Ceramic Capacitor 1.0µF or more.
APPLICATIONS
• CD-drives and DVD-drives
• Power source for Cellular Phone
1
R5511x
BLOCK DIAGRAMS
VDD
VOUT
VDD
VOUT
Vref
Vref
Current Limit
Current Limit
CE
GND
GND
Delay circuit
Delay circuit
VSEN
CE
vDET
VSEN
VDET
Vref
Vref
∗In case 5-pin package is selected, VSEN is connected to VDD or VOUT inside the chip.
SELECTION GUIDE
The output voltage setting code number, hysteresis, output delay time, VSENSE connection option, the detector
output type, the taping type can be selected at the user’s request.
The selection can be made by designating the part number as follows;
R5511xxxxxx-xx
←Part Number
↑ ↑ ↑↑ ↑
a b cd e
Code
a
b
c
d
e
Contents
Designation of the package:
H: SOT-89-5, D: SON-6, N: SOT23-5
Designation of option;
Serial number code of Output voltage and Detector Threshold setting, with/without hysteresis
Designation of Output Delay Time;
A: 1ms, B: 20ms, C: 60ms, D: 240ms
Designation of Supervised pin, Detector Output type
A: VDD monitor Nch Open drain (5-pin package)
B: VOUT monitor Nch Open drain (5-pin package)
C: VSEN monitor Nch Open drain (6-pin package)
D: VSEN monitor CMOS Output (6-pin package)
Designation of Taping Type
∗With Hysteresis / No delay time version can be designated.
2
R5511x
PIN CONFIGURATION
SOT-23-5
5
SOT-89-5
5
4
SON-6
4
(mark side)
1
2
3
1
2
1
6
2
5
3
4
3
PIN DESCRIPTIONS
•
•
SOT-23-5
•
SOT-89-5
SON-6
Pin No
Symbol
Pin No
Symbol
Pin No
Symbol
1
CE
1
VDET
1
CE
2
GND
2
GND
2
GND
3
VDET
3
CE
3
VOUT
4
VDD
4
VOUT
4
VDD
5
VOUT
5
VDD
5
VSEN
6
VDET
Symbol
Description
VOUT
Voltage Regulator Output Pin
VDD
Input and SENSE Pin of Voltage Detector
GND
Ground Pin
VDET
Voltage Detector Output Pin (When the voltage detector detects the lowering voltage
than setting threshold level, the output voltage level is “L”. While VDD Input Level at reset
detection or before crossing threshold level from higher voltage than it, the output voltage
level is “H”.)
CE
Chip Enable Pin
VSEN
VDET SENSE Pin
(In case of 5-lead packages, VSEN is connected VDD or VOUT inside the package.)
3
R5511x
ABSOLUTE MAXIMUM RATINGS
Symbol
VIN
Item
Rating
Unit
6.5
V
6.5
V
6.5
V
CMOS Output
: −0.3~ VIN + 0.3
Ncn Open Drain : −0.3~ 6.5
V
Input Voltage
∗Note
VCE
Input Voltage (CE Input Pin)
VSEN
Input Voltage (VSEN Pin)
VDET
Output Voltage (VDET Output pin)
VOUT
Output Voltage
−0.3~ VIN + 0.3
V
IOUT
Output Current
400
mA
Power Dissipation (SON-6)
150
Power Dissipation (SOT-23-5)
250
Power Dissipation (SOT-89-5)
500
PD
mW
Topt
Operating Temperature
−40~ 85
°C
Tstg
Storage Temperature
−55~ 125
°C
ELECTRICAL CHARACTERISTICS
•
R5511
Symbol
4
Item
Conditions
Min.
Typ.
Max.
Unit
6.0
V
VIN
Input Voltage
ISS1
Quiescent Current 1
VIN−VOUT=1.0V
50
80
µA
ISS2
Quiescent Current 2
VIN=−VDET−0.1V, VCE=0V
1.5
3.0
µA
ISS3
Quiescent Current 3
VIN=−VDET+1.0V, VCE=0V
1.5
3.0
µA
R5511x
•
VR Part
Topt=25°C
Symbol
VOUT
Item
Output voltage
IOUT
Output Current
∆VOUT/∆IOUT
Load regulation
VDIF
Dropout Voltage
Conditions
×0.985
×1.015
(+30mV)
VIN−VOUT = 1.0V
300
×0.980
f=1kHz,Ripple 0.5Vp−p
VIN−VREG1=1.0V
Output Voltage
Temperature Coefficient
IOUT=30mA
−40°C <
= Topt
ILIM
Short Current Limit
VOUT = 0V
RPD
Pull-down resistance for CE pin
VCEH
CE Input Voltage “H”
VCEL
CE Input Voltage “L”
<
=
<
=
85°C
2
∗Note1: ±1.5% (VOUT >
= 2.0V), 30mV(2.0V>VOUT>1.5V), 2.0%(1.5V
∗Note2: Guaranteed by Design.
>
=
V
mA
0.05
6.0V
Unit
×1.020
VIN−VOUT = 1.0V
5
15
∗Note2
1mA <
= IOUT <
= 100mA
Refer to the Electrical Characteristics by Output
Voltage
Ripple Rejection
∆VOUT/∆T
Max.
(−30mV)
IOUT=30mA
VOUT+0.5V <
= VIN
RR
Typ.
VIN−VOUT=1.0V
IOUT=30mA ∗Note1
Line regulation
∆VOUT/∆VIN
•
Min.
0.15
mV
V
%/V
75
dB
±100
ppm
/°C
50
mA
5
14
MΩ
1.1
VIN
V
0.0
0.3
V
VOUT)
VD Part
Topt=25°C
Symbol
Item
−VDET
Detector Threshold
VHYS
Detector Threshold
Hysteresis
Conditions
Min.
Typ.
×0.985
(−30mV)
×0.980
∗Note3
−VDET
×0.03
Delay Time:
0ms, 20ms, 60ms
−VDET
×0.05
Max.
Unit
×1.015
(+30mV)
×1.020
V
−VDET
×0.07
V
IOL
Output Current
IOH
(CMOS Output)
Minimum Operating
VDDL
Voltage
∆−VDET/∆T
tPLH
Detector Threshold
Temperature Coefficient
Output Delay Time
∗Note3: ±1.5% (VOUT
>
=
Refer to Electrical Characteristics by Detector Threshold
0.65
−40°C
<
=
Topt
<
=
0.80
Delay time=1ms
0.5
1.0
2.8
Delay time=20ms
16
20
24
Delay time=60ms
50
60
70
Delay time=240ms
200
240
280
2.0V), 30mV(2.0V>VOUT>1.5V), 2.0%(1.5V
>
=
V
ppm
/°C
±100
85°C
mA
ms
VOUT)
5
R5511x
•
Electrical Characteristics by Output Voltage
Dropout Voltage (mV)
Output Voltage
VOUT (V)
Typ.
Max.
1.2V
<
=
VSET<1.5V
180
280
1.5V
<
=
VSET<1.8V
160
220
1.8V
<
=
VSET<2.2V
140
200
2.2V
<
=
VSET<2.8V
120
170
<
=
100
150
2.8V
•
VDIF
Condition
<
=
VSET
IOUT = 100mA
4.0V
Electrical Characteristics by Detector Threshold
Nch Open Drain Type
Output Current (mA)
Detector Threshold
−VDET (V)
Condition
1.2V
<
=
VDSET<1.6V
VDD=1.1V
1.6V
<
=
VDSET<3.1V
VDD=1.5V
<
=
VDD=3.0V
3.1V
<
=
VDSET
5.0V
VDS=0.5V
Min.
IOL
Typ.
Max.
1.1
2.8
5.0
3.0
6.0
10.0
8.0
11.0
15.0
CMOS Output Type
Detector Threshold
−VDET (V)
1.2V
<
=
VDSET<1.6V, VS=1.7V
1.6V
<
=
VDSET<3.1V, VS=3.3V
3.1V
6
<
=
VDSET
<
=
5.0V, VS=5.4V
Output Current (mA)
Condition
VDD=VS
VDS=VS×0.8
Min.
IOH
Typ.
Max.
0.10
0.20
0.35
0.55
0.90
1.40
1.50
2.10
2.90
R5511x
TYPICAL CHARACTERISTICS
1)
Output Voltage vs. Output Current (Topt=25°C)
R5511x (VR=4.0V)
R5511x (VR=3.3V)
3.5
4.0
VIN=6.0V
3.5
VIN=5.0V
3.0
VIN=4.2V
Output Voltage VOUT(V)
Output Voltage VOUT(V)
4.5
2.5
2.0
1.5
1.0
0.5
0
0
2.5
VIN=3.5V
2.0
1.5
1.0
0.5
0
100 200 300 400 500 600 700 800
Output Current IOUT(mA)
VIN=6.0V
VIN=5.0V
3.0
0
R5511x (VR=2.5V)
R5511x (VR=1.2V)
1.4
2.5
VIN=6.0V
VIN=4.5V
2.0
VIN=2.7V
1.5
1.0
0.5
0
1.2
0.8
VIN=3.0V
0.6
VIN=1.5V
0.4
0.2
0
100 200 300 400 500 600 700 800
Output Current IOUT(mA)
VIN=6.0V
1.0
0
Input Voltage vs. Output Voltage (Topt=25°C)
R5511x (VR=4.0V)
4.5
3.5
4.0
3.0
3.5
3.0
2.5
2.0
1.5
IOUT=1mA
IOUT=30mA
1.0
0.5
0
0
1
2
3
4
Input Voltage VIN(V)
5
6
100 200 300 400 500 600 700 800
Output Current IOUT(mA)
R5511x (VR=3.3V)
Output Voltage VOUT(V)
Output Voltage VOUT(V)
2)
Output Voltage VOUT(V)
Output Voltage VOUT(V)
3.0
0
100 200 300 400 500 600 700 800
Output Current IOUT(mA)
2.5
2.0
1.5
1.0
IOUT=1mA
IOUT=30mA
0.5
0
0
1
2
3
4
Input Voltage VIN(V)
5
6
7
R5511x
2.5
1.2
2.0
1.5
1.0
IOUT=1mA
IOUT=30mA
0.5
0
3)
R5511x (VR=1.2V)
1.4
Output Voltage VOUT(V)
Output Voltage VOUT(V)
R5511x (VR=2.5V)
3.0
0
1
2
3
4
Input Voltage VIN(V)
5
1.0
0.8
0.6
0.4
0
6
IOUT=1mA
IOUT=30mA
0.2
0
Dropout Voltage vs. Output Current
R5511x (VR=4.0V)
Dropout Voltage VDIF(mV)
Dropout Voltage VDIF(mV)
200
85°C
150
25°C
100
-40°C
50
0
50
100 150 200 250
Output Voltage IOUT(mA)
200
85°C
150
25°C
100
-40°C
50
0
300
0
50
100 150 200 250
Output Voltage IOUT(mA)
300
R5511x (VR=1.2V)
350
600
Dropout Voltage VDIF(mV)
Dropout Voltage VDIF(mV)
6
250
R5511x (VR=2.5V)
8
5
300
250
300
250
85°C
200
25°C
150
-40°C
100
50
0
2
3
4
Input Voltage VIN(V)
R5511x (VR=3.3V)
300
0
1
0
50
100 150 200 250
Output Voltage IOUT(mA)
300
500
400
85°C
25°C
300
-40°C
200
100
0
0
50
100 150 200 250
Output Voltage IOUT(mA)
300
R5511x
Output Voltage vs. Temperature
R5511x (VR=4.0V)
R5511x (VR=3.3V)
4.3
3.6
4.2
3.5
Output Voltage VOUT(V)
Output Voltage VOUT(V)
4)
4.1
4.0
IOUT=30mA
3.9
3.8
3.7
-40
-15
10
35
60
Temperature Topt(°C)
3.4
3.3
IOUT=30mA
3.2
3.1
3.0
-40
85
2.8
1.5
2.7
1.4
2.6
2.5
IOUT=30mA
2.4
2.3
2.2
-40
-15
10
35
60
Temperature Topt(°C)
1.3
1.2
IOUT=30mA
1.1
1.0
0.9
-40
85
Supply Current vs. Input Voltage (Topt=25°C)
R5511x (VR=4.0V)
60
50
50
40
30
20
10
0
0
1
2
3
4
Input Voltage VIN(V)
5
6
-15
10
35
60
Temperature Topt(°C)
85
R5511x (VR=3.3V)
60
Supply Current ISS(µA)
Supply Current ISS(µA)
5)
85
R5511x (VR=1.2V)
Output Voltage VOUT(V)
Output Voltage VOUT(V)
R5511x (VR=2.5V)
-15
10
35
60
Temperature Topt(°C)
40
30
20
10
0
0
1
2
3
4
Input Voltage VIN(V)
5
6
9
R5511x
50
50
40
30
20
10
0
0
5
20
10
0
6
0
50
50
Supply Current ISS(µA)
60
40
30
20
10
-15
10
35
60
Temperature Topt(°C)
IOUT=1mA
IOUT=100mA
IOUT=30mA
10
100
Frequency f(kHz)
5
6
30
20
10
1000
-15
10
35
60
Temperature Topt(°C)
85
R5511x (VR=3.3V)
VIN=5.0V+0.2Vp-p,
CIN=none,COUT=Ceramic1.0µF
1
2
3
4
Input Voltage VIN(V)
40
0
-40
85
Ripple Rejection RR(dB)
100
90
80
70
60
50
40
30
20
10
0
0.1
1
R5511x (VR=1.2V)
Ripple Rejection vs. Temperature (Topt=25°C)
R5511x (VR=4.0V)
Ripple Rejection RR(dB)
10
2
3
4
Input Voltage VIN(V)
30
60
0
-40
7)
1
40
Supply Current vs. Temperature
R5511x (VR=4.0V)
Supply Current ISS(µA)
6)
R5511x (VR=1.2V)
60
Supply Current ISS(µA)
Supply Current ISS(µA)
R5511x (VR=2.5V)
60
100
90
80
70
60
50
40
30
20
10
0
0.1
VIN=4.3V+0.2Vp-p,
CIN=none,COUT=Ceramic1.0µF
IOUT=1mA
IOUT=100mA
IOUT=30mA
1
10
100
Frequency f(kHz)
1000
R5511x
IOUT=1mA
IOUT=100mA
IOUT=30mA
1
10
100
Frequency f(kHz)
1000
100
90
80
70
60
50
40
30
20
10
0
0.1
100
90
80
70
60
50
40
30
20
10
0
f = 400Hz
f = 1kHz
f = 10kHz
f = 100kHz
3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3
Input Voltage VIN(V)
VIN=2.2V+0.2Vp-p,
CIN=none,COUT=Ceramic1.0µF
IOUT=1mA
IOUT=100mA
IOUT=30mA
1
10
100
Frequency f(kHz)
1000
R5511x (VR=2.5V)
Ripple 0.2Vp-p,
IOUT=100mA,CIN=none,COUT=1.0µF
Ripple Rejection RR(dB)
Ripple Rejection RR(dB)
Ripple Rejection vs. Input Bias Voltage
R5511x (VR=3.3V)
100
90
80
70
60
50
40
30
20
10
0
Ripple 0.2Vp-p,
IOUT=30mA,CIN=none,COUT=1.0µF
f = 400Hz
f = 1kHz
f = 10kHz
f = 100kHz
3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3
Input Voltage VIN(V)
R5511x (VR=3.3V)
Ripple Rejection RR(dB)
8)
100
90
80
70
60
50
40
30
20
10
0
0.1
R5511x (VR=1.2V)
VIN=3.5V+0.2Vp-p,
CIN=none,COUT=Ceramic1.0µF
Ripple Rejection RR(dB)
Ripple Rejection RR(dB)
R5511x (VR=2.5V)
100
90
80
70
60
50
40
30
20
10
0
Ripple 0.2Vp-p,
IOUT=1mA,CIN=none,COUT=1.0µF
f = 400Hz
f = 1kHz
f = 10kHz
f = 100kHz
3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3
Input Voltage VIN(V)
11
R5511x
Input Transient Response
R5511x (VR=4.0V)
R5511x (VR=3.3V)
3.34
4.03
6
3.33
Input Voltage
5
4.01
4
4.00
3
2
Output Voltage
3.98
1
3.97
0
20
40
60
Time (µs)
80
3.32
4
3.31
3
3.30
3.29
1
3.28
0
100
0
R5511x (VR=2.5V)
1.25
5
1.24
2.52
4
2.51
3
2.50
2
Output Voltage
2.49
1
2.48
20
40
60
Time (µs)
80
Output Voltage VOUT(V)
6
Input Voltage VIN(V)
Output Voltage VOUT(V)
Input Voltage
0
0
100
0
100
3.0
Input Voltage
1.23
2.5
1.22
2.0
1.21
1.5
1.20
1.0
Output Voltage
1.19
0.5
1.18
0
20
40
60
Time (µs)
80
0
100
3.33
120
4.02
100
3.32
100
4.01
80
Load Current
4.00
60
3.99
40
3.98
20
3.97
0
Output Voltage
3.96
-20
3.95
-40
3.94
-60
20
40
60
Time (µs)
80
100
Output Voltage VOUT(V)
120
Load Current IOUT(mA)
Output Voltage VOUT(V)
80
R5511x (VR=3.3V)
CIN=1µF,COUT=1µF
0
12
40
60
Time (µs)
3.5
10) Load Transient Response
R5511x (VR=4.0V)
4.03
20
R5511x (VR=1.2V)
2.54
2.53
2
Output Voltage
Input Voltage VIN(V)
3.99
5
Input Voltage
3.31
80
Load Current
3.30
60
3.29
40
3.28
20
3.27
0
Output Voltage
3.26
-20
3.25
-40
3.24
-60
0
20
40
60
Time (µs)
80
100
Load Current IOUT(mA)
4.02
6
Input Voltage VIN(V)
7
Output Voltage VOUT(V)
4.04
Input Voltage VIN(V)
Output Voltage VOUT(V)
9)
R5511x
120
2.53
100
1.25
100
2.52
80
Load Current
2.51
60
2.50
40
2.49
20
2.48
0
Output Voltage
-20
2.46
-40
2.45
-60
20
40
60
Time (µs)
80
1.23
60
1.22
40
1.21
20
1.20
1.17
6
4
5
2
3
Output Voltage
2
0
1
-1
0
CE Input Voltage VCE(V)
5
4
40
60
Time (µs)
80
100
3
VIN=5.0V,CIN=COUT=1.0µF
5
CE Input Voltage
2
1
0
6
4
3
Output Voltage
-1
2
1
0
-1
-2
-20 -10 0 10 20 30 40 50 60 70 80
Time T (µs)
-2
-1
-20 -10 0 10 20 30 40 50 60 70 80
Time T (µs)
R5511x (VR=2.5V)
R5511x (VR=1.2V)
VIN=5.0V,CIN=COUT=1.0µF
3
4
CE Input Voltage
2
3
1
2
0
-1
Output Voltage
3.0
5
1
0
-2
-1
-20 -10 0 10 20 30 40 50 60 70 80
Time T (µs)
CE Input Voltage VCE(V)
4
CE Input Voltage VCE(V)
7
3
1
-60
20
R5511x (VR=3.3V)
Output Voltage VOUT(V)
4
CE Input Voltage
-40
0
Output Voltage VOUT(V)
CE Input Voltage VCE(V)
5
-20
1.18
100
VIN=5.0V,CIN=COUT=1.0µF
0
Output Voltage
1.19
11) Turn-on Speed with CE
R5511x (VR=4.0V)
6
80
Load Current
VIN=5.0V,CIN=COUT=1.0µF
3.5
3.0
2.5
2.0
Output Voltage VOUT(V)
0
1.24
CE Input Voltage
2.5
1.5
2.0
1.0
1.5
1.0
0.5
0
-0.5
Output Voltage
0.5
0
Output Voltage VOUT(V)
2.47
Output Voltage VOUT(V)
1.26
Load Current IOUT(mA)
R5511x (VR=1.2V)
120
Load Current IOUT(mA)
Output Voltage VOUT(V)
R5511x (VR=2.5V)
2.54
-1.0
-0.5
-20 -10 0 10 20 30 40 50 60 70 80
Time T (µs)
13
R5511x
12) Detector Threshold vs. Temperature
R5511x (−VDET=4.3V)
R5511x (−VDET=2.63V)
2.80
Detector Threshold -VDET(V)
Detector Threshold -VDET(V)
4.50
4.45
4.40
4.35
4.30
4.25
4.20
4.15
-40
-15
10
35
60
Temperature Topt(°C)
2.75
2.70
2.65
2.60
2.55
2.50
2.45
-40
85
R5511x (−VDET=2.0V)
Detector Threshold -VDET(V)
Detector Threshold -VDET(V)
1.40
2.15
2.10
2.05
2.00
1.95
1.90
1.85
-40
-15
10
35
60
Temperature Topt(°C)
85
1.35
1.30
1.25
1.20
1.15
1.10
1.05
-40
13) Detector Output Voltage vs. Input Voltage
R5511x (−VDET=4.3V VDD pull-up)
85
6
VD Output Voltage VDOUT(V)
VD Output Voltage VDOUT(V)
-15
10
35
60
Temperature Topt(°C)
R5511x (−VDET=4.3V 5.0V pull-up)
6
14
85
R5511x (−VDET=1.2V)
2.20
5
4
3
2
85°C 25°C
1
0
-15
10
35
60
Temperature Topt(°C)
-40°C
0
1
2
3
4
Input Voltage VIN(V)
5
6
85°C
5
25°C
4
3
-40°C
2
1
0
0
1
2
3
4
Input Voltage VIN(V)
5
6
R5511x (−VDET=2.63V VDD pull-up)
R5511x (−VDET=2.63V 5.0V pull-up)
6
6
VD Output Voltage VDOUT(V)
VD Output Voltage VDOUT(V)
R5511x
5
4
3
2
85°C 25°C
1
-40°C
0
0
1
2
3
4
Input Voltage VIN(V)
5
R5511x (−VDET=2.0V VDD pull-up)
VD Output Voltage VDOUT(V)
VD Output Voltage VDOUT(V)
4
3
85°C
2
25°C
1
-40°C
0
1
2
3
4
Input Voltage VIN(V)
5
2
1
0
1
2
3
4
Input Voltage VIN(V)
5
6
85°C
5
R5511x (−VDET=1.2V VDD pull-up)
25°C
4
-40°C
3
2
1
0
6
0
1
2
3
4
Input Voltage VIN(V)
5
6
R5511x (−VDET=1.2V 5.0V pull-up)
6
VD Output Voltage VDOUT(V)
6
VD Output Voltage VDOUT(V)
3
6
5
5
4
3
85°C
2
25°C
1
0
-40°C
R5511x (−VDET=2.0V 5.0V pull-up)
6
0
25°C
4
0
6
85°C
5
-40°C
0
1
2
3
4
Input Voltage VIN(V)
5
6
5
85°C
4
25°C
3
-40°C
2
1
0
0
1
2
3
4
Input Voltage VIN(V)
5
6
15
R5511x
R5511x (−VDET=2.0V)
90
80
70
4.0V
60
3.5V
50
40
3.0V
30
2.5V
20
2.0V
10
0
1.5V
0
1
2
3
VDS(V)
4
5
6
Nch Driver Output Current IOUT(mA)
Nch Driver Output Current IOUT(mA)
14) Nch Driver Output Current vs. VDS
R5511x (−VDET=4.3V)
12
10
1.5V
8
6
1.25V
4
2
0
1.0V
0
2.5
1.0V
2.0
1.5
1.0
0.5
0
0.75V
0
1
2
3
VDS(V)
4
5
6
-40°C
25°C
8
85°C
6
4
2
0
0
0.5
1.0 1.5 2.0 2.5
Input Voltage VIN(V)
4
5
6
2.0V
20
15
1.5V
10
1.25V
5
0
1.0V
0
3.0
3.5
1
2
3
VDS(V)
4
5
6
R5511x (−VDET=1.2V)
Nch Driver Output Current IOUT(mA)
Nch Driver Output Current IOUT(mA)
16
14
10
3
VDS(V)
25
15) Nch Driver Output Current vs. Input Voltage
R5511x (−VDET=2.63V)
12
2
R5511x (−VDET=2.63V)
Nch Driver Output Current IOUT(mA)
Nch Driver Output Current IOUT(mA)
R5511x (−VDET=1.2V)
1
5
-40°C
4
25°C
3
85°C
2
1
0
0
0.5
1.0
1.5
2.0
Input Voltage VIN(V)
2.5
R5511x
R5511x (−VDET=2.0V)
-40°C
12
25°C
8
85°C
4
0
0
1
2
3
4
Input Voltage VIN(V)
5
Nch Driver Output Current IOUT(mA)
Nch Driver Output Current IOUT(mA)
R5511x (−VDET=4.3V)
16
12
-40°C
10
8
25°C
6
85°C
4
2
0
0
300
250
200
150
100
50
0
-40
-15
10
35
60
Temperature Topt(°C)
85
70
60
50
40
30
20
10
0
-40
Released Delay Time TDELAY(ms)
Released Delay Time TDELAY(ms)
-15
10
35
60
Temperature Topt(°C)
85
R5511x (TDELAY=0ms)
30
25
20
15
10
5
-15
10
35
60
Temperature Topt(°C)
3.0
80
R5511x (TDELAY=20ms)
0
-40
1.0
1.5
2.0
2.5
Input Voltage VIN(V)
R5511x (TDELAY=60ms)
Released Delay Time TDELAY(ms)
Released Delay Time TDELAY(ms)
16) Released Delay Time vs. Temperature
R5511x (TDELAY=240ms)
0.5
85
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-40
-15
10
35
60
Temperature Topt(°C)
85
17