RF3800 Proposed 0 GaAs HBT PRE-DRIVER AMPLIFIER Typical Applications • Pre-Driver for 450MHz Basestation Amplifiers • PA Stage for Commercial Wireless Infrastructure • Class AB Operation for Cellular Radio and Wireless Local Loop Product Description The RF3800 is specifically designed for wireless infrastructure applications in 450MHz. Using a highly reliable GaAs HBT fabrication process, this high-performance single-stage amplifier achieves high output power over a broad frequency range. The RF3800 also provides excellent efficiency and thermal stability through the use of a thermally-enhanced surface-mount AlN package. Ease of integration is accomplished through the incorporation of an optimized evaluation board design provided to achieve proper 50Ω operation. Various evaluation board bias configurations are available to address a broad range of wireless infrastructure applications. -A- Pin 1 0.005 A 0.200 REF 0.180 REF 0.198 0.236 0.156 0.025 R.008 0.050 TYP 0.050 REF Optimum Technology Matching® Applied 9 GaAs HBT GaAs MESFET Si Bi-CMOS SiGe HBT Si CMOS InGaP/HBT GaN HEMT SiGe Bi-CMOS 0.0780 MAX 0.028 TYP 0.020 7 PL Si BJT 0.0025 0.024 Package Style: AlN Features • 6W Output Power • High Linearity • 45% Power-Added Efficiency VREF 1 Bias Circuit 8 VBIAS • Broadband Platform Design Approach NC 2 7 RF OUT RF IN 3 6 RF OUT NC 4 5 NC PACKAGE BASE GND Functional Block Diagram Rev A1 040827 • Thermally-Enhanced Packaging Ordering Information RF3800 GaAs HBT Pre-Driver Amplifier RF3800PCBA-416 Fully Assembled Evaluation Board RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 4-623 RF3800 Proposed Please contact RF Micro Devices Applications Engineering at (336) 678-5570 for more information. 4-624 Rev A1 040827