RF3375 0 GENERAL PURPOSE AMPLIFIER Pb-Free Product Typical Applications • Basestation Applications • Driver Stage for Power Amplifiers • Broadband, Low-Noise Gain Blocks • Final PA for Low-Power Applications • IF or RF Buffer Amplifiers • High Reliability Applications Product Description The RF3375 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz. The device is self-contained with 50Ω input and output impedances and requires only two external DC-biasing elements to operate as specified. 1.04 0.80 0.50 0.30 3.10 2.90 0.48 0.36 2 PL 1.60 1.40 4.60 4.40 2.60 2.40 Dimensions in mm. 1.80 1.45 Shaded lead is pin 1. 1.75 1.40 0.53 0.41 0.43 0.38 Optimum Technology Matching® Applied 9 Si BJT GaAs HBT GaAs MESFET Si Bi-CMOS SiGe HBT Si CMOS InGaP/HBT GaN HEMT SiGe Bi-CMOS Package Style: SOT89 Features • DC to >6000MHz Operation • Internally Matched Input and Output GND • 13.2dB Small Signal Gain • +28dBm Output IP3 4 1 2 3 RF IN GND RF OUT • +16.0dBm Output P1dB Functional Block Diagram Rev A6 050310 Ordering Information RF3375 General Purpose Amplifier RF337XPCBA-41XFully Assembled Evaluation Board RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 4-591 RF3375 Absolute Maximum Ratings Parameter Input RF Power Operating Ambient Temperature Storage Temperature ICC Parameter Rating Unit +13 -40 to +85 -60 to +150 80 dBm °C °C mA Specification Min. Typ. Max. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Unit T=25 °C, ICC =65mA (See Note 1.) Overall Frequency Range 3dB Bandwidth Gain 12.5 12.5 12.2 12.2 12.0 10.0 Noise Figure Input VSWR Output VSWR Output IP3 Output P1dB Reverse Isolation +31.0 +28.0 +17.0 +14.5 DC to >6000 6 13.5 13.5 13.2 13.2 13.0 12.4 4.6 <1.9:1 <2.0:1 <1.7:1 +33.9 +30.0 +18.5 +16.0 -18.0 MHz GHz dB dB dB dB 175 139 °C/W °C Freq=500MHz Freq=1000MHz Freq=2000MHz Freq=3000MHz Freq=4000MHz Freq=6000MHz Freq=2000MHz In a 50Ω system, DC to 6000MHz In a 50Ω system, DC to 500MHz In a 50Ω system, 500MHz to 6000MHz Freq=1000MHz Freq=2000MHz Freq=1000MHz Freq=2000MHz Freq=2000MHz ICC =65mA, PDISS =313mW. (See Note 3.) VPIN =4.81V TCASE =+85°C 1500 years TCASE =+85°C dB dBm dBm dBm dBm dB Thermal ThetaJC Maximum Measured Junction Temperature at DC Bias Conditions Mean Time to Failures Condition With 22Ω bias resistor, T=+25oC Device Operating Voltage 5.18 5.36 V At pin 8 with ICC =65mA 6.6 7.0 V At Evaluation Board Connector ICC =65mA Operating Current 65 80 mA See Note 2. Note 1: All specification and characterization data has been gathered on standard FR-4 evaluation boards. These evaluation boards are not optimized for frequencies above 2.5GHz. Performance above 2.5GHz may improve if a high performance PCB is used. Note 2: The RF3375 must be operated at or below 80mA in order to achieve the thermal performance listed above. While the RF3375 may be operated at higher bias currents, 65mA is the recommended bias to ensure the highest possible reliability and electrical performance. Note 3: Because of process variations from part to part, the current resulting from a fixed bias voltage will vary. As a result, caution should be used in designing fixed voltage bias circuits to ensure the worst case bias current does not exceed 80mA over all intended operating conditions. Power Supply 4-592 Rev A6 050310 RF3375 Pin 1 Function RF IN 2 3 GND RF OUT Description Interface Schematic RF input pin. This pin is NOT internally DC blocked. A DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. DC coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instability. Ground connection. RF output and bias pin. Biasing is accomplished with an external series resistor and choke inductor to VCC. The resistor is selected to set the DC current into this pin to a desired level. The resistor value is determined by the following equation: ( V SUPPLY – V DEVICE ) R = ------------------------------------------------------I CC 4 GND Rev A6 050310 RF OUT RF IN Care should also be taken in the resistor selection to ensure that the current into the part never exceeds 80mA over the planned operating temperature. This means that a resistor between the supply and this pin is always required, even if a supply near 5.0V is available, to provide DC feedback to prevent thermal runaway. Because DC is present on this pin, a DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. The supply side of the bias network should also be well bypassed. Ground connection. 4-593 RF3375 Application Schematic VCC 4 22 Ω 1 100 pF 2 3 + 100 pF 1 µF 100 nH RF IN RF OUT 100 pF Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) P1 P1-1 1 VCC1 2 GND 3 4 VCC CON3 R1 22 Ω J1 RF IN 50 Ω µstrip C1 100 pF 337x410, r.1 4-594 1 2 3 L1 100 nH C2 100 pF C3 100 pF + C4 1 µF 50 Ω µstrip J2 RF OUT Rev A6 050310 RF3375 Evaluation Board Layout Board Size 1.195" x 1.000" Board Thickness 0.033”, Board Material FR-4 Rev A6 050310 4-595 RF3375 Gain versus Frequency Across Temperature (ICC=65mA) 22.0 15.0 20.0 14.0 18.0 13.0 16.0 Output Power (dBm) Gain (dB) Output P1dB versus Frequency Across Temperature (ICC=65mA) 16.0 12.0 11.0 10.0 14.0 12.0 10.0 9.0 8.0 8.0 6.0 -40°C 25°C 85°C 7.0 -40°C 25°C 85°C 4.0 6.0 2.0 0.0 1000.0 2000.0 3000.0 4000.0 5000.0 6000.0 7000.0 0.0 1000.0 2000.0 Frequency (MHz) Output IP3 versus Frequency Across Temperature 4000.0 5000.0 6000.0 7000.0 Noise Figure versus Frequency Across Temperature (ICC=65mA) (ICC=65mA) 40.0 3000.0 Frequency (MHz) 7.0 35.0 6.0 5.0 Noise Figure (dB) OIP3 (dBm) 30.0 25.0 20.0 4.0 3.0 2.0 15.0 -40°C 25°C 85°C 1.0 -40C 25C 85C 0.0 10.0 0.0 1000.0 2000.0 3000.0 4000.0 5000.0 6000.0 0.0 7000.0 500.0 1000.0 1500.0 2000.0 2500.0 3000.0 3500.0 Frequency (MHz) Frequency (MHz) Input VSWR versus Frequency Across Temperature Output VSWR versus Frequency Across Temperature (ICC=65mA) 2.5 (ICC=65mA) 2.5 VSWR 2.0 VSWR 2.0 1.5 1.5 -40C 25C 85C 1.0 1.0 0.0 1000.0 2000.0 3000.0 4000.0 Frequency (MHz) 4-596 -40C 25C 85C 5000.0 6000.0 7000.0 0.0 1000.0 2000.0 3000.0 4000.0 5000.0 6000.0 7000.0 Frequency (MHz) Rev A6 050310 RF3375 Reverse Isolation versus Frequency Across Temperature 0.0 Junction Temperature versus Power Dissipated (TAMBIENT=+85°C) 180.000 (ICC=65mA) 170.000 Junction Temperature (°C) Reverse Isolation (dB) -5.0 -10.0 -15.0 -20.0 160.000 150.000 140.000 130.000 120.000 -25.0 -40C 25C 85C 110.000 -30.0 100.000 0.0 1000.0 2000.0 3000.0 4000.0 5000.0 0.250 6000.0 0.275 Frequency (MHz) 0.300 0.325 0.350 0.375 0.400 Power Dissipated (Watts) Power Dissipation versus Device Voltage Across Temperature (TAMBIENT=+85°C) Bias Current versus Supply Voltage Across Temperature (At Evaluation Board Connector, RBIAS=22Ω) 100.0 0.50 0.45 90.0 0.40 70.0 0.30 ICC (mA) Power Dissipated (W) 80.0 0.35 0.25 0.20 60.0 50.0 0.15 40.0 0.10 -40C 25C 85C 30.0 0.05 0.00 20.0 4.60 4.70 4.80 4.90 5.00 5.10 5.20 VPIN (V) 5.7 5.9 6.1 6.3 6.5 6.7 6.9 7.1 7.3 7.5 7.7 VCC (V) Bias Current versus Devices Voltage Across Temperature (At Pin 3 of the RF3375) 100.0 90.0 80.0 ICC (mA) 70.0 60.0 50.0 40.0 30.0 -40C 25C 85C 20.0 10.0 4.6 4.8 5.0 5.2 5.4 5.6 5.8 VPIN (V) Rev A6 050310 4-597 RF3375 4-598 Rev A6 050310