RENESAS RJH60F5DPK

Preliminary
RJH60F5DPK
Silicon N Channel IGBT
High Speed Power Switching
REJ03G1836-0100
Rev.1.00
Oct 13, 2009
Features
• High speed switching
• Low on-state voltage
• Fast recovery diode
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
C
4
1. Gate
2. Collector
3. Emitter
4. Collector (Flange)
G
1
2
3
E
Absolute Maximum Ratings
(Tc = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW ≤ 5 μs, duty cycle ≤ 1%
REJ03G1836-0100 Rev.1.00 Oct 13, 2009
Page 1 of 6
Symbol
Ratings
Unit
VCES
VGES
IC
IC
ic(peak) Note1
iDF(peak) Note2
PC
θj-c
θj-c
Tj
600
±30
80
40
160
100
260.4
0.48
2.0
150
V
V
A
A
A
A
W
°C/W
°C/W
°C
Tstg
–55 to +150
°C
RJH60F5DPK
Preliminary
Electrical Characteristics
(Tj = 25°C)
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
C-E diode forward voltage
C-E diode reverse recovery time
Symbol
ICES
IGES
VGE(off)
VCE(sat)
VCE(sat)
Cies
Coes
Cres
td(on)
tr
td(off)
tf
VECF1
VECF2
trr
Notes: 3. Pulse test
REJ03G1836-0100 Rev.1.00 Oct 13, 2009
Page 2 of 6
Min
⎯
⎯
4
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
1.37
1.7
2880
122
47
40
35
80
80
1.6
1.8
140
Max
100
±1
8
1.8
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2.1
⎯
⎯
Unit
μA
μA
V
V
V
pF
pF
pF
ns
ns
ns
ns
V
V
ns
Test Conditions
VCE = 600V, VGE = 0
VGE = ±30 V, VCE = 0
VCE = 10V, IC = 1 mA
IC = 40 A, VGE = 15V Note3
IC = 80 A, VGE = 15V Note3
VCE = 25 V
VGE = 0 V
f = 1 MHz
IC = 30 A, Resistive Load
VCC = 300 V
VGE = 15 V
Note3
Rg = 5 Ω
IF = 20 A
IF = 40 A
Note3
Note3
IF = 20 A
diF/dt = 100 A/μs
RJH60F5DPK
Preliminary
Main Characteristics
Maximum Safe Operation Area
Typical Output Characteristics
PW
100
=
10
Collector Current IC (A)
160
10
μs
s
0μ
10
1
0.1
1
Collector Current IC (A)
10 V
120
13 V
8.6 V
15 V
80
8V
40
VGE = 7.4 V
0
10
100
1
0
1000
2
3
4
5
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
160
Pulse
VCE = Test
10 V
Ta
= 25Test
°C
Pulse
120
80
Tc = 75°C
40
25°C
–25°C
0
0
2
4
6
8
4
Pulse Test
Ta = 25°C
3
2
1
IC = 20 A
2.4
IC = 80 A
2.0
40 A
1.6
20 A
1.2
0.8
0.4
0
−25
VGE = 15 V
Pulse Test
0
25
50
75
100 125 150
Junction Temparature Tj (°C)
REJ03G1836-0100 Rev.1.00 Oct 13, 2009
Page 3 of 6
80 A
0
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Gate to Emitter Cutoff Voltage VGE(off) (V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
40 A
0
10
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
VCE(sat) (V)
9V
Pulse Test
Ta = 25°C
Tc = 25°C
Single pulse
Collector to Emitter Saturation Voltage
VCE(sat) (V)
Collector Current IC (A)
1000
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
7
IC = 10 mA
6
5
4
1 mA
3
2
1
0
−25
VCE = 10 V
Pulse Test
0
25
50
75
100 125 150
Junction Temparature Tj (°C)
RJH60F5DPK
Preliminary
Typical Capacitance vs.
Collector to Emitter Voltage (Typical)
Forward Current vs. Forward Voltage (Typical)
10000
VGE = 0 V
Pulse Test
Ta = 25°C
80
Capacitance C (pF)
Forward Current IF (A)
100
60
40
20
VGE = 0 V
f = 1 MHz
Cies
1000
100
Coes
Cres
Ta = 25°C
0
10
1
2
3
4
0
5
50
150
200
250
300
Collector to Emitter Voltage VCE (V)
Dynamic Input Characteristics (Typical)
Switching Characteristics (Typical) (1)
VGE
IC = 40 A
Ta = 25°C
VCE
600
16
12
400
VCE = 600 V
300 V 8
200
4
VCE = 600 V
300 V
0
0
20
40
60
80
0
100
1000
Switching Time t (ns)
800
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Ta = 25°C
tf
100
td(off)
td(on)
10
tr
1
1
10
Gate Charge Qg (nc)
10000
Switching Characteristics (Typical) (3)
Switching Time t (ns)
1000
td(off)
tf
100
IC = 40 A, RL = 7.5 Ω
VGE = 15 V
tf
100
td(off)
tr
td(on)
td(on)
10
10
1
1000
1000
IC = 40 A, RL = 7.5 Ω
VGE = 15 V, Ta = 25°C
tr
100
Collector Current IC (A)
Switching Characteristics (Typical) (2)
Switching Time t (ns)
100
C-E Diode Forward Voltage VCEF (V)
Gate to Emitter Voltage VGE (V)
Collector to Emitter Voltage VCE (V)
0
10
Gate Resistance Rg (Ω)
REJ03G1836-0100 Rev.1.00 Oct 13, 2009
Page 4 of 6
100
0
20
40
60
80
100 120 140
Case Temperature Tc (°C)
RJH60F5DPK
Preliminary
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width (IGBT)
10
Tc = 25°C
D=1
1
0.5
θj – c(t) = γs (t) • θj – c
θj – c = 0.48 °C/W, Tc = 25°C
0.2
0.1
0.05
0.1
PDM
D=
0.02 0.01 1 shot pulse
0.01
10 μ
100 μ
PW
T
PW
T
1m
10 m
Pulse Width
100 m
10
1
PW (s)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width (Diode)
10
Tc = 25°C
D=1
1
0.5
θj – c(t) = γs (t) • θj – c
θj – c = 2°C/W, Tc = 25°C
0.2
0.1
0.1 0.05
2
0.0
PDM
D=
PW
T
0.01
1 shot pulse
0.01
10 μ
PW
T
100 μ
1m
10 m
Pulse Width
100 m
1
10
PW (s)
Switching Time Test Circuit
Waveform
Ic Monitor
90%
RL
Vin
Vin Monitor
10%
90%
Rg
D.U.T.
90%
VCC
Vin = 15 V
Ic
tr
ton
REJ03G1836-0100 Rev.1.00 Oct 13, 2009
Page 5 of 6
10%
10%
td(on)
td(off)
tf
toff
RJH60F5DPK
Preliminary
Package Dimensions
JEITA Package Code
SC-65
Previous Code
TO-3P / TO-3PV
RENESAS Code
PRSS0004ZE-A
15.6 ± 0.3
MASS[Typ.]
5.0g
Unit: mm
4.8 ± 0.2
1.5
0.3
19.9 ± 0.2
2.0
14.9 ± 0.2
0.5
1.0
φ3.2 ± 0.2
5.0 ± 0.3
Package Name
TO-3P
1.6
2.0
1.4 Max
18.0 ± 0.5
2.8
1.0 ± 0.2
3.6
5.45 ± 0.5
0.6 ± 0.2
0.9
1.0
5.45 ± 0.5
Ordering Information
Part No.
RJH60F5DPK-00-T0
Quantity
360 pcs
REJ03G1836-0100 Rev.1.00 Oct 13, 2009
Page 6 of 6
Shipping Container
Box (Tube)
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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