RUICHIPS RU3710S

RU3710
N-Channel Advanced Power MOSFET
Features
Pin Description
• 100V/60A
RDS (ON)=14mΩ(Typ.) @ VGS=10V
• Ultra Low On-Resistance
TO-220
TO-220F
TO-247
TO-263
• Exceptional dv/dt capability
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
• Lead Free and Green Available
Applications
·Switching Application Systems
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
100
VGSS
Gate-Source Voltage
±25
Maximum Junction Temperature
175
°C
-55 to 175
°C
TC=25°C
60
A
TC=25°C
250
TJ
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
V
Mounted on Large Heat Sink
IDP
300µs Pulsed Drain Current Tested
TC=25°C
ID
PD
Continue Drain Current
Maximum Power Dissipation
①
A
60
TC=100°C
55
TC=25°C
250
TC=100°C
150
RθJC
Thermal Resistance -Junction to Case
0.5
RθJA
Thermal Resistance-Junction to Ambient
62
W
°C/W
Drain-Source Avalanche Ratings
EAS
Avalanche Energy ,Single Pulsed
Storage Temperature Range
800
-55 to 150
Copyright Ruichips Semiconductor Co., Ltd
Rev.C –JAN., 2009
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mJ
RU3710
Electrical Characteristics
(TA=25°C Unless Otherwise Noted)
RU3710
Symbol
Parameter
Test Condition
Unit
Min.
Typ.
Max.
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS=0V, IDS=250µA
100
V
VDS= 100V, VGS=0V
1
TJ=85°C
VGS(th)
IGSS
②
RDS(ON)
Gate Threshold Voltage
VDS=VGS, IDS=250µA
Gate Leakage Current
VGS=±25V, VDS=0V
Drain-Source On-state Resistance
VGS= 10V, IDS=40A
ISD=40 A, VGS=0V
30
2
3
µA
4
V
±100
nA
14
16
mΩ
0.8
1.3
V
Diode Characteristics
VSD
②
Diode Forward Voltage
Reverse Recovery Time
trr
90
ns
180
nC
1.5
Ω
ISD=40A, dlSD/dt=100A/µs
Reverse Recovery Charge
qrr
Dynamic Characteristics
③
RG
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
210
td(ON)
Turn-on Delay Time
13
25
tr
Turn-on Rise Time
25
50
td(OFF)
Turn-off Delay Time
72
130
80
150
85
120
tf
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS= 30V,
Frequency=1.0MHz
VDD=35V, RL=35Ω,
IDS= 1A, VGEN= 10V,
RG=6Ω
Turn-off Fall Time
Gate Charge Characteristics
pF
510
ns
③
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Notes:
3600
VDS=80V, VGS= 10V,
IDS=80A
20
nC
30
①Current limited by wire bond.
②Pulse test ; Pulse width≤300µs, duty cycle≤2%.
③Guaranteed by design, not subject to production testing.
Copyright Ruichips Semiconductor Co., Ltd
Rev. C –JAN., 2009
2
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RU3710
Typical Characteristics
Drain Current
Ptot-Power(W)
ID - Drain Current (A)
Power Dissipation
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
ID - Drain Current (A)
Normalized Effective Transient
Thermal Transient Impedance
VDS - Drain-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. C –JAN., 2009
Square Wave Pulse Duration (sec)
3
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RU3710
Typical Characteristics
Drain-Source On Resistance
ID - Drain Current (A)
RDS(ON) - On Resistance (mΩ)
Output Characteristics
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Gate Threshold Voltage
VGS - Gate-Source Voltage (V)
RDS(ON) - On - Resistance (mW)
Drain-Source On Resistance
VGS - Gate - Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. C –JAN., 2009
Tj - Junction Temperature (°C)
4
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RU3710
Typical Characteristics
Source-Drain Diode Forward
IS - Source Current (A)
Normalized On Resistance
Drain-Source On Resistance
Tj - Junction Temperature (°C)
VSD - Source-Drain Voltage (V)
Gate Charge
C - Capacitance (pF)
VGS - Gate-Source Voltage (V)
Capacitance
VDS - Drain-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. C –JAN., 2009
QG - Gate Charge (nC)
5
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RU3710
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Copyright Ruichips Semiconductor Co., Ltd
Rev. C –JAN., 2009
6
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RU3710
Ordering and Marking Information
RU3710
Package (Available)
R : TO-220;
S: TO-263 ;
P: TO-220F
Q:TO-247
Operating Temperature Range
C : -55 to 175 ºC
Assembly Material
G : Green & Lead Free Device
Packaging
T : TUBE
TR : Tape & Reel
Copyright Ruichips Semiconductor Co., Ltd
Rev. C –JAN., 2009
7
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RU3710
Package Information
TO-220FB-3L
SYMBOL
MM
INCH
MM
SYMBOL
INCH
MIN
NOM
MAX
MIN
NOM
MAX
A
4.40
4.57
4.70
0.173
0.180
0.185
Øp1
MIN
NOM
MAX
MIN
NOM
MAX
1.40
1.50
1.60
0.055
0.059
A1
1.27
1.30
1.33
0.050
0.051
0.052
e
0.063
A2
2.35
2.40
2.50
0.093
0.094
0.098
e1
b
0.77
-
0.90
0.030
-
0.035
H1
6.40
6.50
6.60
0.252
0.256
0.260
b2
1.23
-
1.36
0.048
-
0.054
L
12.75
-
13.17
0.502
-
0.519
-
-
3.95
-
-
0.156
2.54BSC
0.1BSC
5.08BSC
0.2BSC
C
0.48
0.50
0.52
0.019
0.020
0.021
L1
D
15.40
15.60
15.80
0.606
0.614
0.622
L2
D1
9.00
9.10
9.20
0.354
0.358
0.362
Øp
3.57
3.60
3.63
0.141
0.142
0.143
DEP
0.05
0.10
0.20
0.002
0.004
0.008
Q
2.73
2.80
2.87
0.107
0.110
0.113
E
9.70
9.90
10.10
0.382
0.389
0.398
θ1
5°
7°
9°
5°
7°
9°
E1
-
8.70
-
-
0.343
-
θ2
1°
3°
5°
1°
3°
5°
E2
9.80
10.00
10.20
0.386
0.394
0.401
2.50REF.
0.098REF.
ALL DIMENSIONS REFER TO JEDEC STANDARD
DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS
Copyright Ruichips Semiconductor Co., Ltd
Rev. C –JAN., 2009
8
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RU3710
TO-263-2L
SYMBOL
MM
INCH
MM
MIN
NOM
MAX
MIN
NOM
MAX
SYMBOL
INCH
MIN
NOM
MAX
MIN
NOM
MAX
A
4.40
4.57
4.70
0.173
0.180
0.185
L
2.00
2.30
2.60
0.079
0.090
0.102
A1
0
0.10
0.25
0
0.004
0.010
L3
1.17
1.27
1.40
0.046
0.050
0.055
A2
2.59
2.69
2.79
0.102
0.106
0.110
L1
-
-
1.70
-
-
0.067
b
0.77
-
0.90
0.030
-
0.035
L4
0.25BSC
0.01BSC
b1
1.23
-
1.36
0.048
-
0.052
L2
2.50REF.
0.098REF.
c
0.34
-
0.47
0.013
-
0.019
θ
0°
-
8°
0°
-
8°
C1
1.22
-
1.32
0.048
-
0.052
θ1
5°
7°
9°
5°
7°
9°
D
8.60
8.70
8.80
0.338
0.343
0.346
θ2
1°
3°
5°
1°
3°
5°
E
10.00
10.16
10.26
0.394
0.4
0.404
DEP
0.05
0.10
0.20
0.002
0.004
0.008
Øp1
1.40
1.50
1.60
0.055
0.059
0.063
15.50
0.579
e
H
2.54BSC
14.70
15.10
0.1BSC
0.594
0.610
ALL DIMENSIONS REFER TO JEDEC STANDARD
DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS
Copyright Ruichips Semiconductor Co., Ltd
Rev. C –JAN., 2009
9
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RU3710
TO-220F-3L
SYMBOL
MM
INCH
MM
MIN
NOM
MAX
MIN
NOM
MAX
SYMBOL
MIN
NOM
INCH
MAX
MIN
NOM
MAX
E
9.96
10.16
10.36
0.392
0.400
0.408
Øp3
-
3.450
-
-
0.136
-
A
4.50
4.70
4.90
0.177
0.185
0.193
θ1
5°
7°
9°
5°
7°
9°
A1
2.34
2.54
2.74
0.092
0.100
0.108
θ2
-
45°
-
-
45°
-
A2
0.95
1.05
1.15
0.037
0.041
0.045
DEP
0.05
0.10
0.15
0.002
0.004
0.006
A3
0.42
0.52
0.62
0.017
0.020
0.024
F1
1.90
2.00
2.10
0.075
0.079
0.083
A4
2.65
2.75
2.85
0.104
0.108
0.112
F2
13.61
13.81
14.01
0.536
0.544
0.552
c
-
0.50
-
-
0.020
-
F3
3.20
3.30
3.40
0.126
0.130
0.134
D
15.67
15.87
16.07
0.617
0.625
0.633
G
3.25
3.45
3.65
0.128
0.136
0.144
Q
8.80
9.00
9.20
0.346
0.354
0.362
G1
5.90
6.00
6.10
0.232
0.236
0.240
H1
6.48
6.68
6.88
0.255
0.263
0.271
G2
6.90
7.00
7.10
0.272
0.276
0.280
b1
1.17
1.20
0.046
0.047
0.048
b2
0.77
0.8
0.85
0.030
0.031
0.033
e
2.54BSC
0.1BSC
Øp
-
3.183
-
-
0.125
-
1.24
L
12.78
12.98
13.18
0.503
0.511
0.519
b3
1.10
1.30
1.50
0.043
0.051
0.059
D1
8.99
9.19
9.39
0.354
0.362
0.370
E1
9.8
10.00
10.20
0.386
0.394
0.412
Øp1
1.40
1.50
1.60
0.055
0.059
0.063
K1
0.75
0.8
0.85
0.030
0.031
0.033
Øp2
1.15
1.20
1.25
0.045
0.047
0.049
ALL DIMENSIONS REFER TO JEDEC STANDARD
DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS
Copyright Ruichips Semiconductor Co., Ltd
Rev. C –JAN., 2009
10
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RU3710
TO-247
SYMBOL
MM
INCH
MM
SYMBOL
MIN
INCH
MIN
MAX
MIN
MAX
A
4.850
5.150
0,191
0.200
E2
MAX
A1
2.200
2.600
0.087
0.102
L
40.900
41.300
1.610
1.626
3.600 REF
MIN
MAX
0.142 REF
B
1.000
1.400
0.039
0.055
L1
24.800
25.100
0.976
0.988
b1
2.800
3.200
0.110
0.126
L2
20.300
20.600
0.799
0.811
b2
1.800
2.200
0.071
0.087
Φ
7.100
7.300
0.280
0.287
c
0.500
0.700
0.020
0.028
e
5.450 TYP
0.215 TYP
c1
1.900
2.100
0.075
0.083
H
5.980 REF.
0.235 REF.
D
15.450
15.750
0.608
0.620
h
E1
3.500 REF.
0.000
0.300
0.000
0.012
0.138 REF.
ALL DIMENSIONS REFER TO JEDEC STANDARD
DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS
Copyright Ruichips Semiconductor Co., Ltd
Rev. C –JAN., 2009
11
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RU3710
Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
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Investor Relations Contacts:
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Marcom Contact:
[email protected]
Editorial Contact:
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HR Contact:
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Legal Contact:
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TEL: (86-755) 8311-5334
FAX: (86-755) 8311-4278
E-mail: [email protected]
Copyright Ruichips Semiconductor Co., Ltd
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