RURP640CC, RURP650CC, RURP660CC 6A, 400V - 600V Ultrafast Dual Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <55ns JEDEC TO-220AB o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C • Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . 600V ANODE 2 CATHODE ANODE 1 • Avalanche Energy Rated CATHODE (FLANGE) • Planar Construction Applications • Switching Power Supplies • Power Switching Circuits • General Purpose Description The RURP640CC, RURP650CC, and RURP660CC are ultrafast dual diodes with soft recovery characteristics (tRR < 55ns). They have low forward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction. Symbol K These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast soft recovery minimize ringing and electrical noise in many power switching circuits, reducing power loss in the switching transistors. A1 A2 PACKAGE AVAILABILITY PART NUMBER PACKAGE BRAND RURP640CC TO-220AB RURP640C RURP650CC TO-220AB RURP650C RURP660CC TO-220AB RURP660C NOTE: When ordering, use the entire part number. Formerly developmental type TA49038. Absolute Maximum Ratings (per leg) TC = +25oC, Unless Otherwise Specified Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = +155oC) Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ RURP640CC 400 400 400 6 RURP650CC 500 500 500 6 RURP660CC 600 600 600 6 UNITS V V V A 12 12 12 A 60 60 60 A 50 10 -65 to +175 50 10 -65 to +175 50 10 -65 to +175 W mJ oC CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 6-55 File Number 4007 Specifications RURP640CC, RURP650CC, RURP660CC Electrical Specifications (per leg) TC = +25oC, Unless Otherwise Specified LIMITS RURP640CC SYMBOL TEST CONDITION IF = 6A, TC = VF RURP660CC MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS +25oC - - 1.5 - - 1.5 - - 1.5 V o IF = 6A, TC = +150 C IR RURP650CC - - 1.2 - - 1.2 - - 1.2 V VR = 400V, TC = +25oC - - 100 - - - - - - µA VR = 500V, TC = +25oC - - - - - 100 - - - µA VR = 600V, TC = +25oC - - - - - - - - 100 µA VR = 400V, TC = +150oC - - 500 - - - - - - µA VR = 500V, TC = +150oC - - - - - 500 - - - µA +150oC - - - - - - - - 500 µA IF = 1A, dIF/dt = 200A/µs - - 55 - - 55 - - 55 ns IF = 6A, dIF/dt = 200A/µs - - 60 - - 60 - - 60 ns tA IF = 6A, dIF/dt = 200A/µs - 28 - - 28 - - 28 - ns tB IF = 6A, dIF/dt = 200A/µs - 16 - - 16 - - 16 - ns QRR IF = 6A, dIF/dt = 200A/µs - 150 - - 150 - - 150 - nC VR = 10V, IF = 0A - 25 - - 25 - - 25 - pF 3 oC/W IR VR = 600V, TC = tRR CJ RθJC - - 3 - - 3 - - DEFINITIONS VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current. tRR = Reverse recovery time (See Figure 2), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 2). tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2). QRR = Reverse recovery charge. CJ = Junction Capacitance. RθJC = Thermal resistance junction to case. EAVL = Controlled avalanche energy. (See Figures 10 and 11). pw = pulse width. D = duty cycle. V1 AMPLITUDE CONTROLS IF V2 AMPLITUDE CONTROLS dIF/dt L1 = SELF INDUCTANCE OF R4 + LLOOP R1 +V3 t1 ≥ 5tA(MAX) t2 > tRR t3 > 0 L1 tA(MIN) ≤ R4 10 Q2 Q1 +V1 0 IF LLOOP t2 R2 t1 dIF dt tRR tA tB 0 DUT Q4 0.25 IRM t3 IRM C1 0 R4 VR Q3 -V2 R3 -V4 VRM FIGURE 1. tRR TEST CIRCUIT FIGURE 2. tRR WAVEFORMS AND DEFINITIONS 6-56 RURP640CC, RURP650CC, RURP660CC Typical Performance Curves 500 IR , REVERSE CURRENT (µA) IF , FORWARD CURRENT (A) 30 10 +100oC o +25oC +175 C 1 0.5 +175oC 100 10 +100oC 1 0.1 +25oC 0.01 0.001 0 1 0.5 1.5 2 0 2.5 200 100 VF , FORWARD VOLTAGE (V) FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD VOLTAGE DROP TC = +25oC, dIF/dt = 200A/µs t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 600 75 tRR 30 tA 20 tB 10 60 tRR 45 tA 30 tB 15 1 0 0.5 6 1 IF , FORWARD CURRENT (A) FIGURE 6. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +100oC IF(AV) , AVERAGE FORWARD CURRENT (A) TC = +175oC, dIF/dt = 200A/µs 100 80 tRR 60 40 tA tB 20 1 6 IF , FORWARD CURRENT (A) FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +25oC t, RECOVERY TIMES (ns) 500 TC = +100oC, dIF/dt = 200A/µs 90 40 0 0.5 400 FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE VOLTAGE 50 0 0.5 300 VR , REVERSE VOLTAGE (V) 6 6 5 DC 4 SQ. WAVE 3 2 1 0 145 150 155 160 165 170 175 TC , CASE TEMPERATURE (oC) IF , FORWARD CURRENT (A) FIGURE 7. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +175oC FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES 6-57 RURP640CC, RURP650CC, RURP660CC Typical Performance Curves (Continued) CJ , JUNCTION CAPACITANCE (pF) 75 60 45 30 15 0 0 50 150 100 200 VR , REVERSE VOLTAGE (V) FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE Test Circuit and Waveforms IMAX = 1A L = 40mH R < 0.1Ω EAVL = 1/2LI2 [VAVL/(VAVL - VDD)] Q1 AND Q2 ARE 1000V MOSFETs Q1 130Ω L R + VDD 1MΩ DUT 12V VAVL Q2 130Ω IL CURRENT SENSE IL I V VDD t0 12V FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT t1 t2 t FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS 6-58