S1PHB28 Single Phase Half Controlled Bridge With Free Wheeling Diode Dimensions in mm (1mm=0.0394") Type 2 1 3 6 4 S1PHB28-08 S1PHB28-12 S1PHB28-14 S1PHB28-16 S1PHB28-18 VRSM VDSM V 900 1300 1500 1700 1900 VRRM VDRM V 800 1200 1400 1600 1800 8 Symbol Test Conditions IdAV TK=85oC, module IdAVM module IFRMS, ITRMS per leg Maximum Ratings Unit 28 32 23 A ITSM, IFSM TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 300 330 270 300 A 2 TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 440 455 365 370 A2s TVJ=125oC f=50Hz, tp=200us VD=2/3VDRM IG=0.3A diG/dt=0.3A/us repetitive, IT=50A 150 non repetitive, IT=1/2IdAV 500 It (di/dt)cr A/us TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) 1000 V/us 10 5 W PGAVM 0.5 W VRGM 10 V TVJ TVJM Tstg -40...+125 125 -40...+125 (dv/dt)cr PGM VISOL Md Weight TVJ=TVJM IT=ITAVM 50/60Hz, RMS _ IISOL<1mA tp=30us tp=500us t=1min t=1s Mounting torque (M5) (10-32 UNF) o C 3000 3600 V~ 2-2.5 18-22 Nm lb.in. 50 g S1PHB28 Single Phase Half Controlled Bridge With Free Wheeling Diode Symbol IR, ID VT, VF VTO Test Conditions Characteristic Values Unit TVJ=TVJM; VR=VRRM; VD=VDRM TVJ=25oC 5 0.3 mA IT, IF=45A; TVJ=25oC 1.6 V For power-loss calculations only (TVJ=125oC) 0.9 V 15 rT VGT o m VD=6V; TVJ=25 C TVJ=-40oC 1.0 1.2 V VD=6V; TVJ=25oC TVJ=-40oC TVJ=125oC 65 80 50 mA IGT VGD TVJ=TVJM; VD=2/3VDRM 0.2 V IGD TVJ=TVJM; VD=2/3VDRM 5 mA 150 200 100 mA 100 mA 2 us 150 us 75 uC o IL tG=30us; IG=0.3A; diG/dt=0.3A/us TVJ=25 C TVJ=-40oC TVJ=125oC IH TVJ=25oC; VD=6V; RGK= o tgd TVJ=25 C; VD=1/2VDRM IG=0.3A; diG/dt=0.3A/us tq TVJ=125oC; IT=15A; tp=300us; VR=100V Qr VD=2/3VDRM; dv/dt=20V/us; di/dt=-10A/us typ. RthJC per thyristor(diode); DC current per module 1.4 0.35 K/W RthJK per thyristor(diode); DC current per module 2.0 0.5 K/W dS Creepage distance on surface 12.6 mm dA Creepage distance in air 6.3 mm a Maximum allowable acceleration 50 m/s2 10 1000 1: IG T , T V J = 125°C 2: IG T , T V J = 25°C 3: IG T , T V J = -40°C V VG T V J = 25°C s tgd 100 1 1 2 typ. Limit 3 6 4 5 10 0.1 4: P G AV = 0.5 W 5: P G M = 1 W 6: P G M = 10 W IG D, T VJ = 125°C 1 10 100 F ig. 1 G ate trigger range 1000 IG mA 1 10 100 mA 1000 IG F ig. 2 G ate controlled delay time tgd S1PHB28 Single Phase Half Controlled Bridge With Free Wheeling Diode F ig. 3 S urge overload current per chip I F S M: C res t value, t: duration F ig. 4 I 2t vers us time (1-10 ms ) per chip F ig. 5 Max. forward current at heats ink temperature F ig. 6 P ower dis s ipation vers us direct output current and ambient temperature C ons tants for Z thJ K calculation: i 1 2 3 F ig. 7 T rans ient thermal impedance junction to heats ink per chip R thi (K /W) ti (s ) 0.3441 1.1554 1.5005 0.0344 0.12 0.5