TFBS6711 Vishay Semiconductors Low Profile Fast Infrared Transceiver (FIR, 4 Mbit/s) for IrDA® Applications Description The TFBS6711 is the smallest FIR transceiver available. It is a low profile and low-power IrDA transceiver. Compliant to IrDA’s Physical Layer specification, the TFBS6711 supports data transmission rates from 9.6 kbit/s to 4 Mbit/s with a typical link distance of 50 cm. It also enables mobile phones and PDAs to function as universal remote controls for televisions, DVDs and other home appliances. The TFBS6711 emitter covers a range of 6.5 meters with common remote control receivers. Integrated within the transceiver module is a PIN photodiode, an infrared emitter, and a low-power control IC. The TFBS6711 can be completely shutdown, achieving very low power consumption. The TFBS6711 has an I/O voltage 20208 related to the supply voltage while TFBS6712 supports low voltage logic of 1.8 V allowing direct connection to a microcontroller’s I/Os operating at 1.8 V. Features • • • • • • • • • • • • Lowest profile: 1.9 mm Smallest footprint: 6.0 mm x 3.05 mm Surface mount package e4 IrDA transmit distance: 50 cm typical Best Remote Control distance: ≥ 6.5 m on-axis Fast data rates: from 9.6 kbit/s to 4 Mbit/s Low shutdown current: 0.01 µA Operating Voltage: 2.4 V to 3.6 V Reduced pin count: 6 pins I/O voltage equal to the supply voltage Pin compatibility: TFBS4711 and TFBS5711 Integrated EMI Protection − no external shield required • • • • IEC 60825-1 Class 1, Eye Safe Qualified for lead (Pb)-free and Sn/Pb processing Compliant to IrDA Physical Layer Specification Split power supply, transmitter and receiver can be operated from two power supplies with relaxed requirements saving costs, US patent No. 6,157,476 • Lead (Pb)-free device • Qualified for lead (Pb)-free and Sn/Pb processing (MSL4) • Device in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC Applications • High-speed data transfer using infrared wireless communication • Mobile phones • Camera phones • • • • PDAs MP3 Players Digital Cameras IrDA Adapters or Dongles Package Options Ordering Information Part Number Qty/Reel or Tube Description and Remarks TFBS6711-TR1 1000 pcs Oriented in carrier tape for side view surface mounting TFBS6711-TR3 2500 pcs Oriented in carrier tape for side view surface mounting Note: A version oriented in the carrier tape for top view mounting is available on request www.vishay.com 258 Document Number 84676 Rev. 1.3, 21-Feb-07 TFBS6711 Vishay Semiconductors Functional Block Diagram VCC1 Tri-State Driver Amplifier RXD Comparator VCC2 SD Logic & Controlled Driver Control TXD GND 19298 Figure 1. Functional Block Diagramm Pin Description Pin Number Function Description 1 VCC2, IRED Anode IRED anode to be externally connected to VCC2. For higher voltages as 3.6 V an external resistor might be necessary for reducing the internal power dissipation. See derating curves. This pin is allowed to be supplied from an uncontrolled power supply separated from the controlled VCC1 - supply I/O Active 2 TXD Transmit Data Input I HIGH 3 RXD Received Data Output, push-pull CMOS driver output capable of driving a standard CMOS load. No external pull-up or pull-down resistor is required. Floating with a weak pull-up of 500 kΩ (typ.) in shutdown mode. The RXD output echos the TXD input during transmission. O LOW 4 SD Shutdown, also used for dynamic mode switching I HIGH 5 VCC1 Supply voltage 6 GND Ground TFBS6711 Weight: 50 mg PIN 1 19428 Figure 2. Pinning Document Number 84676 Rev. 1.3, 21-Feb-07 www.vishay.com 259 TFBS6711 Vishay Semiconductors Absolute Maximum Ratings Reference point Pin, GND unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Symbol Min Max Unit Supply voltage range, transceiver Parameter 0 V < VCC2 < 6 V Test Conditions VCC1 - 0.5 Typ. 6 V Supply voltage range, transmitter 0 V < VCC1 < 6 V VCC2 - 0.5 6.5 V Input currents For all Pins, Except IRED Anode Pin 10 mA Output sinking current Power dissipation PD Junction temperature TJ 25 mA 500 mW 125 °C Ambient temperature range (operating) Tamb - 25 + 85 °C Storage temperature range Tstg - 25 + 85 °C 260 °C 125 mA Soldering temperature IIRED (DC) Average output current Repetitive pulse output current < 90 µs, ton < 20 % IRED anode voltage Voltage at all inputs and outputs Vin > VCC1 is allowed Virtual source size Method: (1-1/e) encircled energy IIRED (RP) 600 mA IIREDA - 0.5 6.5 V Vin - 0.5 5.5 V d 1.5 mm internal limitation to class 1 500 Maximum Intensity for Class 1 operation of IEC60825-1 or EN60825-1, edition Jan. 2001 IrDA® specified maximum limit mW/sr Due to the internal limitation measures the device is a “class 1” device. It will not exceed the IrDA® intensity limit of 500 mW/sr Definitions: In the Vishay transceiver data sheets the following nomenclature is used for defining the IrDA operating modes: SIR: 2.4 kbit/s to 115.2 kbit/s, equivalent to the basic serial infrared standard with the physical layer version IrPhY 1.0 MIR: 576 kbit/s to 1152 kbit/s FIR: 4 Mbit/s VFIR: 16 Mbit/s IrDA®, the Infrared Data Association, implemented MIR and FIR with IrPHY 1.1, followed by IrPhY 1.2, adding the SIR Low Power Standard. IrPhY 1.3 extended the Low Power Option to MIR and FIR and VFIR was added with IrPhY 1.4. A new version of the standard in any case obsoletes the former version. www.vishay.com 260 Document Number 84676 Rev. 1.3, 21-Feb-07 TFBS6711 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, VCC = 2.4 V to 3.6 V unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Parameters Test Conditions/Pins Symbol Min VCC 2.4 Typ. Max Unit 3.6 V Transceiver Supply voltage Dynamic supply current Receive mode only. In transmit mode, add additional 85 mA (typ) for IRED current. Add RXD output current depending on RXD load. SD = Low, SIR mode ICC 1.7 3 mA SD = Low, MIR/FIR mode ICC 1.9 3.3 mA SD = High T = 25 °C, not ambient light sensitive, detector is disabled in shutdown mode ISD 1 µA SD = High T = 85 °C, not ambient light sensitive ISD 5 µA + 85 °C Output voltage low IOL = 1 mA CLOAD = 15 pF VOL 0.4 V Output voltage high IOH = - 250 µA CLOAD = 15 pF VOH 0.9 x VCC RRXD 400 Shutdown supply current Shutdown supply current Operating temperature range TA Internal RXD pull-up - 25 V 500 600 kΩ Input voltage low (TXD, SD) VIL - 0.5 0.5 V Input voltage high (TXD, SD) VIH VCC - 0.5 VCC + 0.5 V Input leakage current (TXD, SD) IICH -1 +1 µA 5 pF Input capacitance (TXD, SD) *) CI 0.05 Standard illuminant A **) The typical threshold level is 0.5 x V CC (VCC = 3 V). It is recommended to use the specified min/max values to avoid increased operating/ shutdown currents. Document Number 84676 Rev. 1.3, 21-Feb-07 www.vishay.com 261 TFBS6711 Vishay Semiconductors Optoelectronic Characteristics Tamb = 25 °C, VCC = 2.4 V to 3.6 V unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Parameter Test Conditions Symbol Minimum irradiance Ee in angular range **) 9.6 kbit/s to 115.2 kbit/s λ = 850 nm - 900 nm, VCC = 2.4 V Ee Minimum irradiance Ee in angular range MIR mode 1.152 Mbit/s λ = 850 nm - 900 nm, VCC = 2.4 V Ee Minimum irradiance Ee in angular range FIR mode 4 Mbit/s λ = 850 nm - 900 nm, VCC = 2.4 V Ee Maximum irradiance Ee in angular range ***) λ = 850 nm - 900 nm Ee Min Typ. Max Unit 50 80 mW/m2 (5) (8) (µW/cm2) Receiver Ee No detection receiver Input Irradiance (fluorescent light noise suppression) 100 mW/m2 (10) (µW/cm2) 120 200 mW/m2 (12) (20) (µW/cm2) 5 kW/m2 (500) (mW/cm2) 4 mW/m2 (0.4) (µW/cm2) Rise time of output signal 10 % to 90 %, CL = 15 pF tr (RXD) 10 50 ns Fall time of output signal 90 % to 10 %, CL = 15 pF tf (RXD) 10 50 ns RXD pulse width of output signal, 50 %, SIR mode Input pulse length 1.4 µs < PWopt < 25 µs tPW 1.4 1.8 2.6 µs RXD pulse width of output signal, 50 %, MIR mode Input pulse length PWopt = 217 ns, 1.152 Mbit/s tPW 110 250 270 ns RXD pulse width of output signal, 50 %, FIR mode Input pulse length PWopt = 125 ns, 4 Mbit/s tPW 110 140 ns RXD pulse width of output signal, 50 %, FIR mode Input pulse length PWopt = 250 ns, 4 Mbit/s tPW 225 275 ns RXD output jitter, leading edge Input irradiance = 150 mW/m2, 4 Mbit/s 1.152 Mbit/s ≤ 115.2 kbit/s 20 ns 40 ns Receiver start up time After completion of shutdown programming sequence Power on delay tL Latency*) 350 ns 500 µs 100 µs ® Note: All timing data measured with 4 Mbit/s are measured using the IrDA FIR transmission header. The data given here are valid 5 µs after starting the preamble. *) IrDA latency definition: Receiver Latency Allowance (milliseconds or microseconds) is the maximum time after a node ceases transmitting before the node’s receiver recovers its specified sensitivity. During this period and also during the receiver start up time (after power on or shut down) the RXD output may be in an undefined state. **) IrDA sensitivity definition: Minimum Irradiance Ee In Angular Range, power per unit area. The receiver must meet the BER specification while the source is operating at the minimum intensity in angular range into the minimum half-angle range at the maximum Link Length ***) Maximum Irradiance Ee In Angular Range, power per unit area. The optical delivered to the detector by a source operating at the maximum intensity in angular range at Minimum Link Length must not cause receiver overdrive distortion and possible related link errors. If placed at the Active Output Interface reference plane of the transmitter, the receiver must meet its bit error ratio (BER) specification. For more definitions see the document “Symbols and Terminology” on the Vishay Website (http://www.vishay.com/docs/82512/82512.pdf). www.vishay.com 262 Document Number 84676 Rev. 1.3, 21-Feb-07 TFBS6711 Vishay Semiconductors Optoelectronic Characteristics, continued Tamb = 25 °C, VCC = 2.4 V to 3.6 V unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Parameter Test Conditions Symbol Min Typ. Max Unit ID 330 440 600 mA VCC = VIRED = 3.3 V, TXD = Low IIRED -1 1 µA VCC = VIRED = 3.3 V, α = 0° TXD = High, SD = Low, R1 = 1 Ω Ie 45 115 300 mW/sr Output radiant intensity, s. figure 3, recommended application circuit VCC = VIRED = 3.3 V, α = 0°, 15° TXD = High, SD = Low, R1 = 1 Ω Ie 25 75 300 mW/sr Output radiant intensity VCC1 = 3.6 V, α = 0°, 15° TXD = Low or SD = High (Receiver is inactive as long as SD = High) Ie 0.04 mW/sr IRED operating current, switched current control For 3.3-V operation no external resistor is needed. Output leakage IRED current Output radiant intensity, s. figure 3, recommended application circuit α Output radiant intensity, angle of half intensity Peak - emission wavelength Optical rise time, Optical fall time ° ± 24 λp 880 900 nm tropt, tfopt 10 40 ns Optical output pulse duration Input pulse width 217 ns, 1.152 Mbit/s topt 200 217 230 ns Optical output pulse duration Input pulse width 125 ns, 4 Mbit/s topt 116 125 134 ns Optical output pulse duration Input pulse width 250 ns, 4 Mbit/s topt 241 250 259 ns Optical output pulse duration Input pulse width t < 80 µs Input pulse width t ≥ 80 µs topt topt 20 85 µs µs 25 % Optical overshoot Document Number 84676 Rev. 1.3, 21-Feb-07 t www.vishay.com 263 TFBS6711 Vishay Semiconductors Recommended Circuit Diagram Operated at a clean low impedance power supply the TFBS6711 needs no additional external components. However, depending on the entire system design and board layout, additional components may be required (see figure 3). V CC2 V CC1 GND IRED Anode R1 R2 C1 V CC C3 C2 Ground SD SD TXD TXD RXD RXD 19299 In addition, when connecting the described circuit to the power supply, low impedance wiring should be used. When extended wiring is used the inductance of the power supply can cause dynamically a voltage drop at VCC2. Often some power supplies are not able to follow the fast current rise time. In that case another 4.7 µF (type, see table under C1) at VCC2 will be helpful. Keep in mind that basic RF-design rules for circuit design should be taken into account. Especially longer signal lines should not be used without termination. See e.g. "The Art of Electronics" Paul Horowitz, Winfield Hill, 1989, Cambridge University Press, ISBN: 0521370957. Table 1. Recommended Application Circuit Components Component Recommended Value C1 4.7 µF, 16 V Vishay part#: 293D 475X9 016B C2 0.1 µF, Ceramic Vishay part#: VJ1206 Y 104 J XXMT R1 3.3 V supply voltage: no resistor is necessary, the internal controller is able to control the current R2 4.7 Ω, 0.125 W Figure 3. Recommended Application Circuit The capacitor C1 is buffering the supply voltage and eliminates the inductance of the power supply line. This one should be a Tantalum or other fast capacitor to guarantee the fast rise time of the IRED current. Vishay transceivers integrate a sensitive receiver and a built-in power driver. The combination of both needs a careful circuit board layout. The use of thin, long, resistive and inductive wiring should be avoided. The inputs (RXD, SD) and the output RXD should be directly (DC) coupled to the I/O circuit. The capacitor C2 combined with the resistor R2 is the low pass filter for smoothing the supply voltage. R2, C1 and C2 are optional and dependent on the quality of the supply voltages VCCx and injected noise. An unstable power supply with dropping voltage during transmission may reduce the sensitivity (and transmission range) of the transceiver. The placement of these parts is critical. It is strongly recommended to position C2 as close as possible to the transceiver power supply pins. A Tantalum capacitor should be used for C1 while a ceramic capacitor is used for C2. www.vishay.com 264 I/O and Software In the description, already different I/Os are mentioned. Different combinations are tested and the function verified with the special drivers available from the I/O suppliers. In special cases refer to the I/ O manual, the Vishay application notes, or contact directly Vishay Sales, Marketing or Application. Document Number 84676 Rev. 1.3, 21-Feb-07 TFBS6711 Vishay Semiconductors Mode Switching The TFBS6711 is in the SIR mode after power on as a default mode, therefore the FIR data transfer rate has to be set by a programming sequence using the TXD and SD inputs as described below. The low frequency mode covers speeds up to 115.2 kbit/s. Signals with higher data rates should be detected in the high frequency mode. Lower frequency data can also be received in the high frequency mode but with reduced sensitivity. To switch the transceivers from low frequency mode to the high frequency mode and vice versa, the programming sequences described below are required. Setting to the Lower Bandwidth Mode (2.4 kbit/s to 115.2 kbit/s) 1. Set SD input to logic "HIGH". 2. Set TXD input to logic "LOW". Wait ts ≥ 200 ns. 3. Set SD to logic "LOW" (this negative edge latches state of TXD, which determines speed setting). 4. TXD must be held for th ≥ 200 ns. TXD is now enabled as normal TXD input for the lower bandwidth mode. 50 % SD Setting to the High Bandwidth Mode (0.576 Mbit/s to 4 Mbit/s) 1. Set SD input to logic "HIGH". 2. Set TXD input to logic "HIGH". Wait ts ≥ 200 ns. 3. Set SD to logic "LOW" (this negative edge latches state of TXD, which determines speed setting). 4. After waiting th ≥ 200 ns TXD can be set to logic “LOW”. The hold time of TXD is limited by the maximum allowed pulse length. TXD is now enabled as normal TXD input for the high bandwidth mode. ts th High: FIR TXD 50 % 50 % Low: SIR 14873 Figure 4. Mode Switching Timing Diagram Truth table Inputs Outputs SD TXD Input irradiance mW/m2 RXD Transmitter high x x weakly pulled (500 kΩ) high 0 low high x low active (echo) Ie low high > 80 µs x high 0 low low <4 high 0 low low > Min. irradiance Ee in angular range < Max. irradiance Ee in angular range low (active) 0 low low > Max. irradiance Ee in angular range x 0 Document Number 84676 Rev. 1.3, 21-Feb-07 www.vishay.com 265 TFBS6711 Vishay Semiconductors Recommended Solder Profiles Manual Soldering Manual soldering is the standard method for lab use. However, for a production process it cannot be recommended because the risk of damage is highly dependent on the experience of the operator. Nevertheless, we added a chapter to the above mentioned application note, describing manual soldering and desoldering. Solder Profile for Sn/Pb soldering 260 10 s max. at 230 °C 240 °C max. 240 220 2...4 °C/s 200 180 160 140 120 s...180 s 120 90 s max. 100 80 2...4 °C/s 60 40 20 0 0 50 100 150 200 250 300 350 Time/s 19431 Figure 5. Recommended Solder Profile for Sn/Pb soldering Lead (Pb)-Free, Recommended Solder Profile The TFBS6711 is a lead (Pb)-free transceiver and qualified for lead (Pb)-free processing. For lead (Pb)-free solder paste like Sn(3.0-4.0)Ag(0.5-0.9)Cu, there are two standard reflow profiles: Ramp-SoakSpike (RSS) and Ramp-To-Spike (RTS). The RampSoak-Spike profile was developed primarily for reflow ovens heated by infrared radiation. With widespread use of forced convection reflow ovens the Ramp-ToSpike profile is used increasingly. Shown below in figure 6 is VISHAY's recommended profiles for use with the TFBS6711 transceivers. For more details please refer to Application note: SMD Assembly Instruction. Storage The storage and drying processes for all VISHAY transceivers (TFDUxxxx and TFBSxxx) are equivalent to MSL4. The data for the drying procedure is given on labels on the packing and also in the application note "Taping, Labeling, Storage and Packing" (http://www.vishay.com/docs/82601/82601.pdf). 280 T ≥ 255 °C for 20 s max 260 T peak = 260 °C max. 240 T ≥ 217 °C for 50 s max 220 200 180 Temperature/°C Temperature/°C 160 °C max. 160 20 s 140 120 90 s...120 s 100 50 s max. 2 °C...4 °C/s 80 60 2 °C...4 °C/s 40 20 0 0 50 100 150 200 250 300 350 19261 Time/s Figure 6. Solder Profile, RSS Recommendation Wave Soldering For TFDUxxxx and TFBSxxxx transceiver devices wave soldering is not recommended. www.vishay.com 266 Document Number 84676 Rev. 1.3, 21-Feb-07 TFBS6711 Vishay Semiconductors TFBS4711, TFBS5711, TFBS6711, and TFBS6712 Package (Mechanical Dimensions) 19612 Figure 7. Package drawing, tolerances: Height + 0.1, - 0.2 mm, otherwise ± 0.2 mm if not indicated 19728 19301 Soldering footprint: Side view Soldering footprint: Top view Figure 8. Soldering footprints Design Rules for Optical Windows For optical windows see the application note on the web http://www.vishay.com/docs/82506/82506.pdf. Document Number 84676 Rev. 1.3, 21-Feb-07 www.vishay.com 267 TFBS6711 Vishay Semiconductors Drawing-No.: 9.800-5090.01-4 Issue: 1; 29.11.05 14017 Tape Width A max. N W1 min. W2 max. W3 min. mm mm mm mm mm mm W3 max. mm 16 330 50 16.4 22.4 15.9 19.4 Figure 9. Reel dimensions [mm] 19303 Drawing-No.: 9.700-5294.01-4 Issue: prel. copy; 24.11.04 Figure 10. Tape dimensions [mm] TFBS6711-TT3 www.vishay.com 268 Document Number 84676 Rev. 1.3, 21-Feb-07 TFBS6711 Vishay Semiconductors 19304 Drawing-No.: 9.700-5295.01-4 Issue: prel. copy; 24.11.04 Figure 11. Tape dimensions [mm] TFBS6711-TR3 Document Number 84676 Rev. 1.3, 21-Feb-07 www.vishay.com 269 TFBS6711 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 84676 Rev. 1.3, 21-Feb-07 www.vishay.com 270 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1