SM-8 DUAL NPN MEDIUM POWER DARLINGTON TRANSISTORS ZDT605 ISSUE 1 - NOVEMBER 1995 ZDT605 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). C1 B1 C1 E1 C2 B2 C2 E2 SM-8 (8 LEAD SOT223) PARTMARKING DETAIL T605 PARAMETER SYMBOL Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage MIN. UNIT CONDITIONS. 140 V IC=100µA VCEO(SUS) 120 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 10 V IE=100µA Collector Cutoff Current ICBO 0.01 10 µA µA VCB=120V VCB=120V, Tamb=100°C Collector Cutoff Current ICES 10 µA VCES=120V Emitter Cutoff Current IEBO 0.1 µA VEB=8V Collector-Emitter Saturation Voltage VCE(sat) 1.0 1.5 V V IC=250mA, IB=0.25mA* IC=1A, IB=1mA* Base-Emitter Saturation Voltage VBE(sat) 1.8 V IC=1A, IB=1mA* Base-Emitter TurnOn Voltage VBE(on) 1.7 V IC=1A, VCE=5V* ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage VEBO 10 V Peak Pulse Current ICM 4 A Continuous Collector Current IC 1 A Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C THERMAL CHARACTERISTICS PARAMETER SYMBOL Total Power Dissipation at Tamb = 25°C* Any single die on Both die on equally Ptot Derate above 25°C* Any single die on Both die on equally Thermal Resistance - Junction to Ambient* Any single die on Both die on equally UNIT Static Forward Current Transfer Ratio hFE VALUE 2.25 2.75 W W Transition Frequency fT 18 22 mW/ °C mW/ °C Input Capacitance Cibo Output Capacitance Switching Times 55.6 45.5 °C/ W °C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. 3 - 324 2K 5K 2K 0.5K MAX. IC=50mA, VCE=5V* IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V* 100K 150 MHz IC=100mA, VCE=10V f=20MHz 90 Typical pF VEB=0.5V, f=1MHz Cobo 15 Typical pF VCE=10V, f=1MHz ton 0.5 Typical µs toff 1.6 Typical µs IC=0.5A, VCE=10V IB1=IB2=0.5mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3 - 325 SM-8 DUAL NPN MEDIUM POWER DARLINGTON TRANSISTORS ZDT605 ISSUE 1 - NOVEMBER 1995 ZDT605 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). C1 B1 C1 E1 C2 B2 C2 E2 SM-8 (8 LEAD SOT223) PARTMARKING DETAIL T605 PARAMETER SYMBOL Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage MIN. UNIT CONDITIONS. 140 V IC=100µA VCEO(SUS) 120 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 10 V IE=100µA Collector Cutoff Current ICBO 0.01 10 µA µA VCB=120V VCB=120V, Tamb=100°C Collector Cutoff Current ICES 10 µA VCES=120V Emitter Cutoff Current IEBO 0.1 µA VEB=8V Collector-Emitter Saturation Voltage VCE(sat) 1.0 1.5 V V IC=250mA, IB=0.25mA* IC=1A, IB=1mA* Base-Emitter Saturation Voltage VBE(sat) 1.8 V IC=1A, IB=1mA* Base-Emitter TurnOn Voltage VBE(on) 1.7 V IC=1A, VCE=5V* ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage VEBO 10 V Peak Pulse Current ICM 4 A Continuous Collector Current IC 1 A Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C THERMAL CHARACTERISTICS PARAMETER SYMBOL Total Power Dissipation at Tamb = 25°C* Any single die on Both die on equally Ptot Derate above 25°C* Any single die on Both die on equally Thermal Resistance - Junction to Ambient* Any single die on Both die on equally UNIT Static Forward Current Transfer Ratio hFE VALUE 2.25 2.75 W W Transition Frequency fT 18 22 mW/ °C mW/ °C Input Capacitance Cibo Output Capacitance Switching Times 55.6 45.5 °C/ W °C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. 3 - 324 2K 5K 2K 0.5K MAX. IC=50mA, VCE=5V* IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V* 100K 150 MHz IC=100mA, VCE=10V f=20MHz 90 Typical pF VEB=0.5V, f=1MHz Cobo 15 Typical pF VCE=10V, f=1MHz ton 0.5 Typical µs toff 1.6 Typical µs IC=0.5A, VCE=10V IB1=IB2=0.5mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3 - 325 ZDT605 TYPICAL CHARACTERISTICS -55°C +25°C +100°C +175°C 1.4 2.5 - Gain normalised to 1 Amp - (Volts) 1.6 1.2 1.0 IC/IB=100 V 0.8 0.6 0.4 0.2 0 2.2 2.0 1.8 0.01 0.1 1 10 -55°C +25°C +100°C VCE=5V 2.0 1.5 1.0 0.5 0.001 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC -55°C +25°C +100°C +175°C 2.2 10 -55°C +25°C +100°C 2.0 1.8 - (Volts) 1.6 - (Volts) h 1.8 1.4 1.2 IC/IB=100 V 1.0 1.6 1.4 1.2 1.0 0.8 0.6 0.6 VCE=5V V 0.8 0.4 0.01 0.1 1 10 IC - Collector Current (Amps) 0.4 0.01 0.1 1 IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC 3 - 326 10