TRIQUINT AGR19060E

AGR19060E
60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
GSM Features
The AGR19060E is a 60 W, 28 V N-channel laterally
diffused metal oxide semiconductor (LDMOS) RF
power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—
1990 MHz), global system for mobile communication
(GSM/EDGE), time-division multiple access (TDMA),
and single-carrier or multicarrier class AB power
amplifier applications.
Typical performance over entire GSM band:
— P1dB: 60 W typical.
— Continuous wave (CW) power gain: @ P1dB =
14.5 dB.
— CW efficiency @ P1dB = 53% typical.
— Return loss: –12 dB.
Device Performance Features
High-reliability, gold-metalization process.
Low hot carrier injection (HCI) induced bias drift
over 20 years.
AGR19060EU (unflanged)
AGR19060EF (flanged)
Figure 1. Available Packages
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
N-CDMA Features
Typical 2 carrier N-CDMA performance: VDD =
28 V, IDQ = 700 mA, f1 = 1958.75 MHz, f2 =
1961.25 MHz, IS-95 CDMA (pilot, sync, paging,
traffic codes 8—13). Peak/average (P/A) = 9.72 dB
at 0.01% probability on CCDF. 1.2288 MHz transmission bandwidth (BW). Adjacent channel power
ratio (ACPR) measured over 30 kHz BW at f1 –
885 kHz and f2 + 885 kHz. Third-order intermodulation distortion (IM3) measured over a
1.2288 MHz BW at f1 – 2.5 MHz and f2 + 2.5 MHz.
— Output power (POUT): 12 W.
— Power gain: 15.5 dB.
— Efficiency: 23.5%.
— IM3: –36 dBc.
— ACPR: –50.5 dBc.
EDGE Features
Typical EDGE performance (1960 MHz, 26 V,
IDQ = 500 mA):
— Output power (POUT): 25 W.
— Power gain: 15.3 dB.
— Efficiency: 37%.
— Modulation spectrum:
@ ±400 kHz = –61.0 dBc.
@ ±600 kHz = –74.0 dBc.
— Error vector magnitude (EVM) = 2.5%.
Device can withstand 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 1930 MHz, 60 W CW
output power.
Large signal impedance parameters available.
ESD Rating*
AGR19060E
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. PEAK
Agere Devices
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be
observed.
AGR19060E
60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Electrical Characteristics
Table 1. Thermal Characteristics
Parameter
Thermal Resistance, Junction to Case:
AGR19060EU
AGR19060EF
Symbol
Value
Unit
RθJC
RθJC
1.00
1.00
°C/W
°C/W
Symbol
VDSS
VGS
Value
65
–0.5, 15
Unit
Vdc
Vdc
PD
PD
175
175
W
W
—
—
TJ
TSTG
1.00
1.00
200
–65, 150
W/°C
W/°C
°C
°C
Table 2. Absolute Maximum Ratings*
Parameter
Drain-source Voltage
Gate-source Voltage
Total Dissipation at TC = 25 °C:
AGR19060EU
AGR19060EF
Derate Above 25 °C:
AGR19060EU
AGR19060EF
Operating Junction Temperature
Storage Temperature Range
* Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only.
Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the
data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Recommended operating conditions apply unless otherwise specified: T C = 30 °C.
Table 3. dc Characteristics
Parameter
Off Characteristics
= 90
300µA
µA)
Drain-source Breakdown Voltage (VGS = 0 V, ID =
Gate-source Leakage Current (VGS = 5 V, VDS = 0 V)
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V)
On Characteristics
Forward Transconductance (VDS = 10 V, ID = 0.45 A)
Gate Threshold Voltage (VDS = 10 V, ID = 180 µA)
Gate Quiescent Voltage (VDS = 28 V, ID = 500 mA)
Drain-source On-voltage (VGS = 10 V, ID = 0.45 A)
Symbol
Min
Typ
Max
Unit
V(BR)DSS
IGSS
IDSS
65
—
—
—
—
—
—
1.8
100
5.5
Vdc
µAdc
µAdc
GFS
VGS(th)
VGS(Q)
VDS(on)
—
—
—
—
4.0
—
3.6
0.08
—
4.8
—
—
S
Vdc
Vdc
Vdc
AGR19060E
60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Electrical Characteristics (continued)
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. RF Characteristics
Parameter
Symbol
Min
Typ
Max Unit
Dynamic Characteristics
CRSS
—
1.3
—
pF
Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
(Part is internally matched both on input and output.)
Test Fixture)
Functional Tests (in Supplied
Agere Systems
Supplied Test Fixture)
GPS
14.5 15.5
—
dB
Common-source Amplifier Power Gain
(VDD = 28 Vdc, POUT = 12 W average, 2-Carrier N-CDMA, IDQ = 700 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
Drain Efficiency
η
—
23.5
—
%
(VDD = 28 Vdc, POUT = 12 W average, 2-Carrier N-CDMA, IDQ = 700 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
Third-order Intermodulation Distortion
IM3
—
–36
— dBc
(VDD = 28 Vdc, POUT = 12 W average, 2-Carrier N-CDMA, IDQ = 700 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz;
IM3 measured in a 1.2288 MHz integration BW centered at f1 – 2.5 MHz
and f2 + 2.5 MHz, referenced to the carrier channel power)
ACPR
— –50.5 — dBc
Adjacent Channel Power Ratio
(VDD = 28 Vdc, POUT = 12 W average, 2-Carrier N-CDMA, IDQ = 700 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz;
ACPR measured in a 1.2288 MHz integration BW centered at
f1 – 2.5 MHz and f2 + 2.5 MHz, referenced to the carrier channel power)
IRL
—
–12
—
dB
Input Return Loss
(VDD = 28 Vdc, POUT = 12 W average, 2-Carrier N-CDMA, IDQ = 700 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
Output Power at 1 dB Gain Compression
P1dB
60
70
—
W
(VDD = 28 V, POUT = 60 W CW, f = 1990 MHz, IDQ = 500 mA)
Ruggedness
Ψ
No degradation in output
(VDD = 28 V, POUT = 60 W CW, IDQ = 350 mA, f = 1930 MHz,
power.
VSWR = 10:1 [all phase angles])
AGR19060E
60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Test Circuit Illustrations for AGR19060E
R3
VGG
C2
R2
C1
RF INPUT
+
C13
C11
Z1
VDD
FB1
R1
Z2
C3
C4
Z3
Z4
Z14
Z13
Z5
2
1
Z6
C12
C6
Z7
Z8
C7
Z9
3
C5
+
+
C8
Z10
C17
DUT
C9
C18
C10
Z11 C16 Z12
RF
OUTPUT
PINS: 1. DRAIN, 2. GATE, 3. SOURCE
A. Schematic
Gate
C2
R2
C1
Gnd
Drain
C12
R1
C11
R3
C8 C9 C18 C10
C3
FB1
C6
C13
C4
S1
S2
C5
C7
C16
C17
B. Component Layout
Parts List:
■ Microstrip line: Z1 0.330 in. x 0.065 in.; Z2 0.470 in. x 0.065 in.; Z3 0.175 in. x 0.065 in.; Z4 0.260 in. x 0.270 in.; Z5 0.410 in. x 0.840 in.;
Z6 0.260 in. x 0.970 in.; Z7 0.105 in. x 0.400 in.; Z8 0.330 in. x 0.560 in.; Z9 0.165 in. x 0.240 in.; Z10 0.315 in. x 0.065 in.;
Z11 0.260 in. x 0.065 in.; Z12 0.255 in. x 0.065 in.; Z13 0.440 in. x 0.030 in.; Z14 0.695 in. x 0.050 in.
®
■ ATC B case chip capacitors: C3, C6: 8.2 pF, 100B8R2JCA500X; C4, C16: 10 pF, 100B100JCA500X; C7: 1000 pF, 100B102JCA500X.
®
■ Kemet B case chip capacitors: C9, C11: 0.10 µF, CDR33BX104AKWS.
®
■ Johanson Giga-Trim variable capacitors: C5, C17: 0.4 pF—2.5 pF.
®
■ Vitramon 1206: C2, C8: 22000 pF.
®
■ Murata 0805: C13: 0.01 µF, GRM40X7R103K100AL.
®
■ Fair-Rite ferrite bead: FB1, #2743019447.
®
■ Sprague tantalum, SMT, 35 V: C1, C10, C12: 22 µF; C18: 10 µF.
■ Fixed film chip resistors, 0.25 W, 0.08 x 0.13: R1 510 Ω; R2 560 kΩ; R3 4.7 Ω.
■ PCB etched circuit boards.
®
■ Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, εr = 3.5.
Figure 2. AGR19060E Test Circuit Schematic
AGR19060E
60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
IN D
90
0.6
0.0 Ð > W A V EL E
N GTH
S TOW
A RD
0.0
0.49
0.48
170
0.
10
0.1
0.4
20
50
20
10
5.0
4.0
3.0
2.0
1.8
1.6
1.4
1.2
50
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
± 180
0.1
0.2
9
0.0
-90
-1
06
-70
40
5
0.
0.
07
30
-1
43
0.
8
0.0
2
0.4
0.4
1
0.4
0.39
F
0.38
0.37
0.1
0.
0
1.8
0.12
-65
2.
0.11
-100
-90
0.13
0.6
1.6
5
0.36
-60
1.4
1.2
1.0
0.9
-4
0.14
-80
0.35
-110
5
,O
o)
0
-4
0.15
0
-70
-5
6
4
0
-12
-80
1.
0
IV
CT
IN
0.7
0.1
0.3
0.8
35
5
3
-60
VE
-5
0.3
7
CA P
AC
I TI
(-j
0.0
Z
X/
0.1
-75
R
0.2
-30
32
CE
CO
M
T
-160
-85
)
/ Yo
(-jB
CE
DU
18
0.
RE
AC
TA
N
EN
0.
0
-5
-25
0.
PO
N
V
AN
PT
CE
US
ES
0.4
0
0.6
0
-20
31
0.
19
0.
44
0.8
3.
0.3
.45
4.0
WA
0
1.
-15
6
0.4
4
0.0
0
-15
0.2
8
-30
0.2
0
-4
4
0.
0.2
9
0.2
1
0.3
8
0.
0.2
2
<Ð
ZS
0.6
5.0
0.2
f1
-10
0.48
0.4
f3
10
D L OA D <
OW A R
HST
N GT
-170
EL E
ZL
0.1
0.2
-20
7
0.4
f1
20
Ð
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
f3
50
0.49
8
0.25
0.26
0.24
0.27
0.23
0.25
0.24
0.26
0.23
0.27
L ECTI ON COEFFI CI EN
T
F
E
I
N
R
D
E
GREE
L E OF
S
ANG
I SSI ON COEFFI CI EN T I N
TRA N SM
D EGR
EES
L E OF
ANG
Z0 = 20 Ω
U CT
Typical Performance Characteristics
MHz (f)
1930 (f1)
1960 (f2)
1990 (f3)
Note:
ZL Ω
(Complex Optimum Load Impedance)
3.23 – j1.07
3.06 – j0.99
2.97 – j1.00
ZS Ω
(Complex Source Impedance)
7.24 – j5.20
7.04 – j5.00
6.87 – j4.96
ZL was chosen based on trade-offs between gain, output power, drain efficiency, and intermodulation distortion.
GATE (2)
ZS
DRAIN (1)
ZL
SOURCE (3)
INPUT MATCH
DUT
OUTPUT MATCH
Figure 3. Series Equivalent Input and Output Impedances
AGR19060E
60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
55
18
P1dB = 48.66 dBm (73.50 W)
17
3 dB
50
16
GPS
15
POUT (dBm)Z
13
P3dB = 49.41 dBm
(87.24 W)
40
POUT
12
11
35
GPS (dB)Z
14
45
10
9
8
30
7
25
15
20
25
P IN (dBm)Z
30
35
40
6
Test Conditions:
VDD = 28 Vdc, IDQ = 500 mA, CW, center frequency = 1960 MHz.
Figure 4. CW POUT vs. PIN
50
-20

GPS (dB),
 (%)Z
40
35
-25
2.25 MHz
30
1 MHz
25
20
-35
-40
-45
-50
15
GPS
10
5
0
-30
885 kHz
-55
ACPR (dBc)
45
-60
-65
1
10
POUT (W) Avg.Z
-70
100
Test Conditions:
VDD = 28 Vdc, IDQ = 700 mA, f = 1960 MHz, N-CDMA, 2.5 MHz @ 1.2288 MHz BW, P/A = 9.72 dB @ 0.01% probability (CCDF), channel spacing (BW) 885 kHz (30 kHz), 1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz).
Figure 5. N-CDMA ACPR, Power Gain, and Drain Efficiency vs. POUT
AGR19060E
60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
60
55
50
45
40
35
30
25
20
15
10
5
0
-10
IM3
-20

-30
ACP
-40
-50
GPS
1
-60
IM3 (dBc), ACPR (dBc)Z
GPS (dB),
 (%)Z
Typical Performance Characteristics (continued)
-70
100
10
POUT (W)Z
Test Conditions:
VDD = 28 Vdc, IDQ = 700 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 x N-CDMA, 2.5 MHz @ 1.2288 MHz BW, P/A = 9.72 dB @ 0.01% probability (CCDF), channel spacing (BW) ACPR: 885 kHz (30 kHz), IM3: 2.5 MHz (1.2288 MHz).
Figure 6. 2-Carrier N-CDMA ACPR, IM3, Power Gain, and Drain Efficiency vs. P OUT
17
IDQ = 800 mA
IDQ = 700 mA
IDQ = 600 mA
IDQ = 300 mA
IDQ = 400 mA
IDQ = 500 mA
GPS (dB)Z
16
15
14
13
12
1
10
POUT (W)
Test Conditions:
VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 carrier N-CDMA measurement.
Figure 7. 2-Carrier N-CDMA Power Gain vs. POUT
100
AGR19060E
60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
-30
IDQ = 300 mA
-35
IDQ = 400 mA
IDQ = 500 mA
ACPR (dBc)Z
-40
-45
-50
-55
IDQ = 800 mA
-60
IDQ = 700 mA
IDQ = 600 mA
-65
-70
1
10
100
POUT (W)Z
Test Conditions:
VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 carrier N-CDMA measurement.
Figure 8. ACPR vs. POUT
-15
-20
IDQ = 300 mA
IDQ = 400 mA
IM3 (dBc)
-25
IDQ = 500 mA
-30
-35
-40
-45
IDQ = 800 mA
IDQ = 700 mA
-50
-55
IDQ = 600 mA
1
10
POUT (W)
Test Conditions:
VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 carrier N-CDMA measurement.
Figure 9. IM3 vs. POUT
100
AGR19060E
60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
55
-30
50
-35
45

40
-40
400 kHz
35
-45
-50
600 kHz
30
-55
25
-60
GPS
20
-65
15
-70
10
5
0
-75
EVM
0
10
-80
20
30
40
50
60
SPECTRAL REGROWTH (dBc)
GPS (dB),
 (%), EVM (%) Z
Typical Performance Characteristics (continued)
-85
P OUT (W) Avg.Z
Test Conditions:
VDD = 26 Vdc, IDQ = 500 mA, f = 1960 MHz, modulation = GSM/EDGE.
55
-30
50
-35
45

40
-40
400 kHz
-45
35
-50
30
-55
600 kHz
25
20
-60
-65
GPS
15
-70
10
-75
EVM
5
0
0
10
-80
20
30
40
50
60
SPECTRAL TREGROWTH (dBc)Z
GPS (dB),
 (%), EVM (%) Z
Figure 10. GSM/EDGE Power Gain, Drain Efficiency, Spectral Regrowth, and EVM vs. POUT
-85
P OUT (W) Avg.Z
Test Conditions:
VDD = 28 Vdc, IDQ = 500 mA, f = 1960 MHz, modulation = GSM/EDGE.
Figure 11. GSM/EDGE Power Gain, Drain Efficiency, Spectral Regrowth, and EVM vs. POUT
AGR19060E
60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Package Dimensions
All dimensions are in inches. Tolerances are ±0.005 in. unless specified.
AGR19060EU
PINS:
1. DRAIN
2. GATE
3. SOURCE
PEAK DEVICES
AGR19060XU
YYWWLL XXXXX
ZZZZZZZ
AGR19060EF
PINS:
1. DRAIN
2. GATE
3. SOURCE
PEAK DEVICES
AGR19060XE
YYWWLL XXXXX
ZZZZZZZ
Label Notes:
■ M before the part number denotes model program. X before the part number denotes engineering prototype.
■
■
■
■
The last two letters of the part number denote wafer technology and package type.
YYWWLL is the date code including place of manufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; BK = Bangkok,
Thailand). XXXXX = five-digit wafer lot number.
ZZZZZZZ = seven-digit assembly lot number on production parts.
ZZZZZZZZZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes.