AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz— 1990 MHz), wide-band code division multiple access (W-CDMA), global system for mobile communication (GSM/EDGE), time-division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications. Typical performance over entire GSM band: — P1dB: 90 W typical. — Continuous wave (CW) power gain: @ P1dB = 14.0 dB. — CW Efficiency @ P1dB = 50% typical. — Return loss: –12 dB. Device Performance Features High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift over 20 years. AGR19090EU (unflanged) AGR19090EF (flanged) Figure 1. Available Packages N-CDMA Features Typical 2 carrier N-CDMA performance: VDD = 28 V, IDQ = 850 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz, IS-95 CDMA (pilot, sync, paging, traffic codes 8—13). Peak/average (P/A) = 9.72 dB at 0.01% probability on CCDF. 1.2288 MHz transmission bandwidth (BW). Adjacent channel power ratio (ACPR) measured over 30 kHz BW at f1 – 885 kHz and f2 + 885 kHz. Third-order intermodulation (IM3) distortion measured over a 1.2288 MHz BW at f1 – 2.5 MHz and f2 + 2.5 MHz. — Output power (POUT): 18 W. — Power gain: 15.0 dB. — Efficiency: 25.8%. — IM3: –34.5 dBc. — ACPR: –50 dBc. EDGE Features Typical EDGE performance (1960 MHz, 26 V, IDQ = 800 mA): — Output power (POUT): 36 W. — Power gain: 15.0 dB. — Efficiency: 38%. — Modulation spectrum: @ ±400 kHz = –61.0 dBc. @ ±600 kHz = –73.0 dBc. — Error vector magnitude (EVM) = 2.2%. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Device can withstand 10:1 voltage standing wave ratio (VSWR) at 28 Vdc, 1930 MHz, 90 W CW output power. Large signal impedance parameters available. ESD Rating* AGR19090E HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4 * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. PEAK Agere Devices employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. AGR 19090 E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Electrical Characteristics Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR19090EU AGR19090EF Symbol Value Unit RθJC RθJC 0.75 0.75 °C/W °C/W Symbol VDSS VGS Value 65 –0.5, 15 Unit Vdc Vdc PD PD 230 230 W W — — TJ 1.33 1.33 200 –65, 150 W/°C W/°C °C °C Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 °C: AGR19090EU AGR19090EF Derate Above 25 °C: AGR19090EU AGR19090EF Operating Junction Temperature Storage Temperature Range TSTG * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Recommended operating conditions apply unless otherwise specified: TC = 30 °C. Table 3. dc Characteristics Parameter Off Characteristics 130 µA) Drain-source Breakdown Voltage (VGS = 0 V, ID = 300 Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V) On Characteristics Forward Transconductance (VDS = 10 V, ID = 0.67 A) Gate Threshold Voltage (VDS = 10 V, ID = 270 µA) Gate Quiescent Voltage (VDS = 28 V, ID = 800 mA) Drain-source On-voltage (VGS = 10 V, ID = 0.67 A) Symbol Min Typ Max Un i t V(BR)DSS IGSS IDSS 65 — — — — — — 2.7 150 8 Vdc µAdc µAdc GFS VGS(th) VGS(Q) VDS(on) — — — — 6.0 — 3.7 0.08 — 4.8 — — S Vdc Vdc Vdc AG R190 90E 90 W, 1930 MHz —1990 MHz, PCS LDMOS RF Power Transistor Electrical Characteristics (continued) Recommended operating conditions apply unless otherwise specified: TC = 30 °C. Table 4. RF Characteristics Parameter Dynamic Characteristics Symbol Min Typ Max Unit CRSS — 2.0 — pF Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) (Part is internally matched both on input and output.) (in Supplied Test Fixture) Functional Tests (in Agere Systems Supplied Test Fixture) GPS 14.5 15.5 — dB Common-source Amplifier Power Gain (VDD = 28 Vdc, POUT = 18 W average, 2-Carrier N-CDMA, IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) Drain Efficiency η — 25.8 — % (VDD = 28 Vdc, POUT = 18 W average, 2-Carrier N-CDMA, IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) Third-order Intermodulation Distortion IM3 — –34.5 — dBc (VDD = 28 Vdc, POUT = 18 W average, 2-Carrier N-CDMA, IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measured in a 1.2288 MHz integration BW centered at f1 – 2.5 MHz and f2 + 2.5 MHz, referenced to the carrier channel power) ACPR — –50 — dBc Adjacent Channel Power Ratio (VDD = 28 Vdc, POUT = 18 W average, 2-Carrier N-CDMA, IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPR measured in a 1.2288 MHz integration BW centered at f1 – 2.5 MHz and f2 + 2.5 MHz, referenced to the carrier channel power) IRL — –12 — dB Input Return Loss (VDD = 28 Vdc, POUT = 18 W average, 2-Carrier N-CDMA, IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) Output Power at 1 dB Gain Compression P1dB 90 95 — W (VDD = 28 V, POUT = 90 W CW, f = 1990 MHz, IDQ = 800 mA) Ruggedness Ψ No degradation in output (VDD = 28 V, POUT = 90 W CW, IDQ = 800 mA, f = 1930 MHz, power. VSWR = 10:1 [all phase angles]) AGR 19090 E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Test Circuit Illustrations for AGR19090E R2 VGG VDD FB1 R3 R4 C10 Z1 RF INPUT C3 Z2 C4 C1 C5 Z3 + C7 Z4 Z5 Z6 Z13 Z7 Z14 1 C9 Z8 2 3 C8 DUT C11 C17 C12 C13 C14 C16 C15 Z9 Z10 C16 Z11 C2 Z12 RF OUTPUT PINS: 1. DRAIN, 2. GATE, 3. SOURCE A. Schematic B. Component Layout Parts List: ? Microstrip line: Z1 0.390 in. x 0.065 in.; Z2 0.300 in. x 0.065 in.; Z3 0.070 in. x 0.065 in.; Z4 0.400 in. x 0.260 in.; Z5 0.100 in. x 0.540 in.; Z6 0.160 in. x 0.770 in.; Z7 0.275 in. x 1.160 in.; Z8 0.550 in. x 1.130 in.; Z9 0.300 in. x 0.205 in.; Z10 0.120 in. x 0.065 in.; Z11 0.165 in. x 0.065 in.; Z12 0.555 in. x 0.065 in.; Z13 0.185 in. x 0.030 in.; Z14 0.845 in. x 0.050 in. ® ? ATC B case chip capacitors: C1, C2, 10 pF, 100B100JCA500X; C7, C11, 8.2 pF, 100B8R2CA500X. ® ? Sprague tantalum SMT: C9, C10, C15 22 µF, 35 V. ® ? Kemet : B case chip capacitors: C3, C14 0.10 µF, CDR33BX104AKWS; tantalum capacitor: C16, 1 µF, 50 V T491C. ® ? Vitramon 1206: C5, C12: 22000 pF. ® ? Murata : 0805: C4, C13 0.01 µF, GRM40X7R103K100AL. ? 0603: C12 220 pF. ® ? Johanson Giga-Trim variable capacitors: C8, C18 0.4 pF—2.5 pF. ? Fixed film chip resistors (0.25 W, 0.08 x 0.13): R2 4.7 Ω; R3 1.02 kΩ; R4 560 kΩ. ® ? Fair-Rite ferrite bead: FB1: 2743019447. ® ? Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, εr = 3.5. Figure 2. AGR19090E Test Circuit AG R190 90E 90 W, 1930 MHz —1990 MHz, PCS LDMOS RF Power Transistor U CT 8 0. IN D 0.25 0.26 0.24 0.27 0.23 0.25 0.24 0.26 0.23 0.27 REFL ECTI ON COEFFI CI EN T I N D EG REES L E OF ANG I SSI ON COEFFI CI EN T I N TRA N SM D EGR EES L E OF ANG 0.6 10 0.1 0.4 20 20 50 10 5.0 4.0 3.0 2.0 1.8 1.4 1.6 1.2 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.1 0.2 0.2 50 RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo) ZL 0 1.8 0.38 0.37 0.1 9 0.0 40 -1 06 -70 0. 07 30 -1 43 0. 8 0.0 2 0.4 0.4 1 0.4 0.39 F 0.12 0 -65 .5 2. 0.11 -100 -90 0.13 0.6 1.6 1.4 1.2 1.0 0.9 5 0.36 0.8 0 -4 0.14 -80 0.35 -110 0 -12 -85 1. 0 IV CT IN 0 -4 0.15 -75 R 0.7 -70 -5 6 4 5 0.1 0.3 -5 35 -60 -60 VE 0.0 Z X/ 3 0.3 7 0.1 CA P AC I TI (-j 5 ,O o) 0.2 -30 32 CE CO M T -80 AN PT CE US ES DU 18 0. RE AC TA N EN 0. 0 -5 -25 0. PO N 0 0.4 31 0. 19 0. 4 .4 0.6 0 3. -20 0 0.8 -15 4.0 6 0.4 4 0.0 0 1. -15 0.3 5 0.4 5.0 -30 0.2 0 -4 4 0. 0.2 8 ZS 8 0. 0.2 9 0.2 1 0.3 f1 0.2 2 f3 -10 ) / Yo (-jB CE 0.6 -20 0.2 0.4 10 0.1 0.2 f1 20 f3 50 Z0 = 10 Ω 0.0 Ð > W A V EL E 0.49 N GTH S TOW A RD 0.48 0.0 0.49 A D <Ð A RD L O 0.48 7 S TOW ± 180 H T 0.4 170 -170 EN G L E V WA <Ð -90 90 -160 Typical Performance Characteristics MHz (f) 1930 (f1) 1960 (f2) 1990 (f3) Note: ZS Ω (Complex Source Impedance) 2.16 – j2.62 2.44 – j2.57 2.49 – j2.76 ZL Ω (Complex Optimum Load Impedance) 2.51 – j0.83 2.50 – j0.82 2.38 – j0.80 ZL was chosen based on trade-offs between gain, output power, drain efficiency, and intermodulation distortion. GATE (2) ZS DRAIN (1) ZL SOURCE (3) INPUT MATCH DUT OUTPUT MATCH Figure 3. Series Equivalent Input and Output Impedances AGR 19090 E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Typical Performance Characteristics (continued) 54 53 P3dB = 51.60 dBm (144.53 W) 15 14 P1dB = 50.81 dBm (120.66 W) 52 P OUT (dBm)Z 16 GPS 13 51 12 50 11 49 10 48 9 P OUT 47 8 46 7 45 6 44 5 43 30 31 GPS (dB)Z 55 32 33 34 35 36 37 38 39 40 41 42 4 PIN (dBm)Z Test Conditions: VDD = 28 Vdc, IDQ = 800 mA, pulsed CW, 4 µs (on), 40 µs (off), center frequency = 1960 MHz. Figure 4. Pulse CW POUT vs. PIN 50 -25 45 -30 ? (%)Z GPS (dB), -35 885 kHz 35 2.25 MHz 30 1 MHz 25 -40 -45 -50 20 -55 15 -60 GPS 10 5 0 ACPR (dBc)Z ? 40 -65 -70 1 10 POUT (W) Avg.Z -75 100 Test Conditions: VDD = 28 Vdc, IDQ = 850 mA, f = 1960 MHz, N-CDMA, 2.5 MHz @ 1.2288 MHz BW, P/A = 9.72 dB @ 0.01% probability (CCDF), channel spacing (BW) 885 kHz (30 kHz), 1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz). Figure 5. N-CDMA ACPR, Power Gain, and Drain Efficiency vs. POUT AG R190 90E 90 W, 1930 MHz —1990 MHz, PCS LDMOS RF Power Transistor 60 55 50 45 40 35 30 25 20 15 10 5 0 -10 -20 IM3 ? -30 -40 ACP GPS 1 -50 -60 IM3 (dBc), ACPR (dBc) GPS (dB), ? (%) Typical Performance Characteristics (continued) -70 100 10 P OUT (W) Test Conditions: VDD = 28 Vdc, IDQ = 850 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 x N-CDMA, 2.5 MHz @ 1.2288 MHz BW, P/A = 9.72 dB @ 0.01% probability (CCDF), channel spacing (BW) ACPR: 885 kHz (30 kHz), IM3: 2.5 MHz (1.2288 MHz). Figure 6. 2-Carrier N-CDMA ACPR, IM3, Power Gain, and Drain Efficiency vs. POUT 17 IDQ = 1300 mA GPS (dB)Z 16 IDQ = 1100 mA 15 IDQ = 850 mA IDQ = 650 mA 14 IDQ = 450 mA 13 12 1 10 POUT (W) Test Conditions: VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 carrier N-CDMA measurement. Figure 7. 2-Carrier N-CDMA Power Gain vs. POUT 100 AGR 19090 E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Typical Performance Characteristics (continued) -30 -35 -40 IDQ = 450 mA ACPR (dBc)Z -45 -50 IDQ = 650 mA -55 IDQ =1300 mA -60 IDQ = 1100 mA -65 -70 IDQ = 850 mA 1 10 POUT (W) 100 Test Conditions: VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 carrier N-CDMA measurement. Figure 8. ACPR vs. POUT -15 -20 IM3 (dBc)Z -25 -30 IDQ = 450 mA -35 IDQ = 650 mA -40 -45 -50 -55 IDQ =1300 mA IDQ = 1100 mA IDQ = 850 mA 1 10 POUT (W)Z Test Conditions: VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 carrier N-CDMA measurement. Figure 9. IM3 vs. POUT 100 AG R190 90E 90 W, 1930 MHz —1990 MHz, PCS LDMOS RF Power Transistor 50 -40 45 -45 40 -50 ? 35 -55 30 -60 400 kHz 25 -65 20 15 -75 GPS 10 -80 EVM 5 0 -70 600 kHz 0 10 20 -85 30 40 50 60 70 SPECTRAL REGROWTH (dBc) GPS (dB), ? (%), EVM (%) Z Typical Performance Characteristics (continued) -90 P OUT (W) Avg.Z Test Conditions: VDD = 28 Vdc, IDQ = 800 mA, f = 1960 MHz, modulation = GSM/EDGE. 50 -40 45 -45 40 -50 ? 35 -55 30 -60 400 kHz 25 -65 20 15 -75 GPS 10 5 0 -70 600 kHz -80 -85 EVM 0 10 20 30 40 50 60 70 SPECTRAL REGROWTH (dBc)Z GPS (dB), ? (%), EVM (%) Z Figure 10. GSM/EDGE Power Gain, Drain Efficiency, Spectral Regrowth, and EVM vs. POUT -90 POUT (W) Avg.Z Test Conditions: VDD = 26 Vdc, IDQ = 800 mA, f = 1960 MHz, modulation = GSM/EDGE. Figure 11. GSM/EDGE Power Gain, Drain Efficiency, Spectral Regrowth, and EVM vs. POUT AGR 19090 E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Package Dimensions All dimensions are in inches. Tolerances are ±0.005 in. unless specified. AGR19090EU PINS: 1. DRAIN 2. GATE 3. SOURCE 1 1 PEAK DEVICES AGR19090EU 3 XXXX 3 2 2 AGR19090EF PINS: 1. DRAIN 2. GATE 3. SOURCE 1 PEAK DEVICES AGR19090EF XXXX 2 XXXX - 4 Digit Trace Code 1 3 3 2