AON6240 40V N-Channel MOSFET General Description Product Summary VDS The AON6240 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode. 40V 85A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 1.6mΩ RDS(ON) (at VGS = 4.5V) < 2.4mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS VGS Gate-Source Voltage TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current C V A 355 27 IDSM TA=70°C ±20 67 IDM TA=25°C Units V 85 ID TC=100°C Maximum 40 A 22 Avalanche Current C IAS, IAR 82 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 336 mJ Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 0: February 2011 2.3 Steady-State Steady-State RθJA RθJC W 1.5 TJ, TSTG Symbol t ≤ 10s W 33 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 83 PD TC=100°C -55 to 150 Typ 14 40 1 www.aosmd.com °C Max 17 55 1.5 Units °C/W °C/W °C/W Page 1 of 6 AON6240 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Max 40 1 TJ=55°C µA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.3 ID(ON) On state drain current VGS=10V, VDS=5V 355 Units V VDS=40V, VGS=0V VGS(th) 100 nA 1.9 2.4 V 1.3 1.6 2.1 2.7 VGS=4.5V, ID=20A 1.8 2.4 mΩ 1 V 85 A VGS=10V, ID=20A RDS(ON) Typ Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=20A 166 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance mΩ S 4360 5458 6550 pF VGS=0V, VDS=20V, f=1MHz 970 1395 1815 pF 30 103 176 pF VGS=0V, VDS=0V, f=1MHz 0.5 1.0 1.6 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 58 72.8 88 nC Qg(4.5V) Total Gate Charge 24 31 44 Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=20V, ID=20A VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω nC 14.8 nC 10.8 nC 14.8 ns 5.5 ns 61.3 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 16 23.9 10 31 ns Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 59 84.6 110 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: February 2011 www.aosmd.com Page 2 of 6 AON6240 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 50 4.5V 3V 10V 40 40 ID(A) ID (A) VDS=5V 50 30 30 20 20 10 125°C 25°C 10 VGS=2.5V 0 0 0 1 2 3 4 0 5 4 Normalized On-Resistance VGS=4.5V 2 1 VGS=10V 0 3 4 5 6 VGS=10V ID=20A 1.8 1.6 1.4 VGS=4.5V ID=20A 1.2 1 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+02 5 ID=20A 1.0E+01 4 1.0E+00 3 125°C IS (A) RDS(ON) (mΩ Ω) 2 2 3 RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 125°C 1.0E-01 25°C 2 1.0E-02 1 1.0E-03 25°C 1.0E-04 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: February 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON6240 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 7000 Capacitance (pF) VGS (Volts) Ciss 6000 VDS=20V ID=20A 8 6 4 5000 4000 3000 Coss 2000 2 1000 0 Crss 0 0 10 20 30 40 50 60 70 80 90 0 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 400 1000.0 10µs RDS(ON) limited 360 320 100µs 10.0 1ms 10ms DC 1.0 240 200 160 120 TJ(Max)=150°C TC=25°C 0.1 TJ(Max)=150°C TC=25°C 280 Power (W) 100.0 ID (Amps) 25 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=1.5°C/W 1 PD 0.1 Single Pulse Ton T 0.01 0.00001 Rev 0: February 2011 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) www.aosmd.com 10 100 Page 4 of 6 AON6240 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS IAR (A) Peak Avalanche Current 1000.0 100 90 TA=25°C Power Dissipation (W) TA=100°C 100.0 TA=150°C TA=125°C 10.0 80 70 60 50 40 30 20 10 0 1.0 1 10 100 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 0 1000 100 25 50 75 100 125 TCASE (° °C) Figure 13: Power De-rating (Note F) 150 10000 90 TA=25°C 1000 70 Power (W) Current rating ID(A) 80 60 50 40 100 30 10 20 10 0 1 0 25 50 75 100 125 TCASE (° °C) Figure 14: Current De-rating (Note F) 150 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=55°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 Rev 0: February 2011 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) www.aosmd.com 100 1000 Page 5 of 6 AON6240 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0: February 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6