AOSMD AON6240

AON6240
40V N-Channel MOSFET
General Description
Product Summary
VDS
The AON6240 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are
minimized due to an extremely low combination of
RDS(ON) and Crss.In addition,switching behavior is well
controlled with a "Schottky style" soft recovery body
diode.
40V
85A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 1.6mΩ
RDS(ON) (at VGS = 4.5V)
< 2.4mΩ
100% UIS Tested
100% Rg Tested
DFN5X6
Top View
D
Top View
Bottom View
1
8
2
7
3
6
4
5
G
S
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
Current
C
V
A
355
27
IDSM
TA=70°C
±20
67
IDM
TA=25°C
Units
V
85
ID
TC=100°C
Maximum
40
A
22
Avalanche Current C
IAS, IAR
82
A
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
336
mJ
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 0: February 2011
2.3
Steady-State
Steady-State
RθJA
RθJC
W
1.5
TJ, TSTG
Symbol
t ≤ 10s
W
33
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
83
PD
TC=100°C
-55 to 150
Typ
14
40
1
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°C
Max
17
55
1.5
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON6240
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Max
40
1
TJ=55°C
µA
5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1.3
ID(ON)
On state drain current
VGS=10V, VDS=5V
355
Units
V
VDS=40V, VGS=0V
VGS(th)
100
nA
1.9
2.4
V
1.3
1.6
2.1
2.7
VGS=4.5V, ID=20A
1.8
2.4
mΩ
1
V
85
A
VGS=10V, ID=20A
RDS(ON)
Typ
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=20A
166
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous CurrentG
DYNAMIC PARAMETERS
Ciss
Input Capacitance
mΩ
S
4360
5458
6550
pF
VGS=0V, VDS=20V, f=1MHz
970
1395
1815
pF
30
103
176
pF
VGS=0V, VDS=0V, f=1MHz
0.5
1.0
1.6
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
58
72.8
88
nC
Qg(4.5V) Total Gate Charge
24
31
44
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=20V, ID=20A
VGS=10V, VDS=20V, RL=1Ω,
RGEN=3Ω
nC
14.8
nC
10.8
nC
14.8
ns
5.5
ns
61.3
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
16
23.9
10
31
ns
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
59
84.6
110
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: February 2011
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Page 2 of 6
AON6240
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
60
50
4.5V
3V
10V
40
40
ID(A)
ID (A)
VDS=5V
50
30
30
20
20
10
125°C
25°C
10
VGS=2.5V
0
0
0
1
2
3
4
0
5
4
Normalized On-Resistance
VGS=4.5V
2
1
VGS=10V
0
3
4
5
6
VGS=10V
ID=20A
1.8
1.6
1.4
VGS=4.5V
ID=20A
1.2
1
0.8
0
5
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
25
50
75
100
125
150
175
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.0E+02
5
ID=20A
1.0E+01
4
1.0E+00
3
125°C
IS (A)
RDS(ON) (mΩ
Ω)
2
2
3
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
125°C
1.0E-01
25°C
2
1.0E-02
1
1.0E-03
25°C
1.0E-04
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: February 2011
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON6240
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
7000
Capacitance (pF)
VGS (Volts)
Ciss
6000
VDS=20V
ID=20A
8
6
4
5000
4000
3000
Coss
2000
2
1000
0
Crss
0
0
10
20
30
40
50
60
70
80
90
0
5
10
15
20
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
400
1000.0
10µs
RDS(ON)
limited
360
320
100µs
10.0
1ms
10ms
DC
1.0
240
200
160
120
TJ(Max)=150°C
TC=25°C
0.1
TJ(Max)=150°C
TC=25°C
280
Power (W)
100.0
ID (Amps)
25
80
40
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=1.5°C/W
1
PD
0.1
Single Pulse
Ton
T
0.01
0.00001
Rev 0: February 2011
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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10
100
Page 4 of 6
AON6240
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
IAR (A) Peak Avalanche Current
1000.0
100
90
TA=25°C
Power Dissipation (W)
TA=100°C
100.0
TA=150°C
TA=125°C
10.0
80
70
60
50
40
30
20
10
0
1.0
1
10
100
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
0
1000
100
25
50
75
100
125
TCASE (°
°C)
Figure 13: Power De-rating (Note F)
150
10000
90
TA=25°C
1000
70
Power (W)
Current rating ID(A)
80
60
50
40
100
30
10
20
10
0
1
0
25
50
75
100
125
TCASE (°
°C)
Figure 14: Current De-rating (Note F)
150
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=55°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
Rev 0: February 2011
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
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100
1000
Page 5 of 6
AON6240
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0: February 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6