AOSMD AON6403

AON6403
30V P-Channel MOSFET
General Description
Product Summary
The AON6403 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
VDS
-30V
ID (at VGS= -10V)
-85A
RDS(ON) (at VGS= -10V)
< 3.1mΩ
RDS(ON) (at VGS = -4.5V)
< 4.3mΩ
100% UIS Tested
100% Rg Tested
DFN5X6
Top View
D
Top View
Bottom View
1
8
2
7
3
6
4
5
G
S
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
C
V
A
-280
-21
IDSM
TA=70°C
±20
-67
IDM
TA=25°C
Continuous Drain
Current
Units
V
-85
ID
TC=100°C
Maximum
-30
A
-17
Avalanche Current C
IAR
-72
A
Repetitive avalanche energy L=0.1mH C
TC=25°C
EAR
259
mJ
Power Dissipation
B
TC=100°C
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 2: November 2010
2.3
Steady-State
Steady-State
RθJA
RθJC
www.aosmd.com
W
1.4
TJ, TSTG
Symbol
t ≤ 10s
W
33
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
83
PD
-55 to 150
Typ
14
40
1
°C
Max
17
55
1.5
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON6403
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-30
Typ
Max
V
VDS=-30V, VGS=0V
-1
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.2
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-280
TJ=55°C
-5
VDS=0V, VGS= ±20V
±100
VGS=-10V, ID=-20A
-1.7
-2.2
3.1
3.6
4.4
VGS=-4.5V, ID=-20A
3.5
4.3
VDS=-5V, ID=-20A
82
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
µA
nA
V
A
2.6
RDS(ON)
Units
-0.7
mΩ
mΩ
S
-1
V
-85
A
6100
7600
9120
pF
930
1320
1720
pF
630
1050
1470
pF
1
2
4
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
130
163
196
nC
Qg(4.5V) Total Gate Charge
63
79
95
nC
18
22
26
nC
33
46
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V, ID=-20A
20
13
ns
VGS=-10V, VDS=-15V,
18
ns
RL=0.75Ω, RGEN=3Ω
135
ns
52
ns
trr
Body Diode Reverse Recovery Time
IF=-20A, dI/dt=500A/µs
21
26
Qrr
Body Diode Reverse Recovery Charge IF=-20A, dI/dt=500A/µs
63
78
32
94
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.Maximum UIS current limited by test equipment .
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev 2: Nov. 2010
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2: November 2010
www.aosmd.com
Page 2 of 6
AON6403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
150
-3.5V
VDS=-5V
-4V
120
120
-3V
90
90
-ID(A)
-ID (A)
-10V
60
60
30
125°C
30
VGS=-2.5V
25°C
0
0
0
1
2
3
4
0
5
5
3
4
5
Normalized On-Resistance
1.6
4
RDS(ON) (mΩ )
2
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=-4.5V
3
VGS=-10V
2
VGS=-10V
ID=-20A
1.4
17
5
VGS=-4.5V
2
ID=-20A
10
1.2
1
0.8
1
0
5
0
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
10
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
9
1.0E+02
ID=-20A
8
1.0E+01
40
7
1.0E+00
6
5
-IS (A)
RDS(ON) (mΩ )
1
125°C
125°C
1.0E-01
1.0E-02
4
25°C
1.0E-03
3
1.0E-04
25°C
2
1.0E-05
1
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 2: November 2010
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON6403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
12000
VDS=-15V
ID=-20A
10000
Ciss
Capacitance (pF)
-VGS (Volts)
8
6
4
2
8000
6000
4000
Coss
2000
0
Crss
0
0
30
60
90
120
150
Qg (nC)
Figure 7: Gate-Charge Characteristics
180
0
5
10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
30
400
1000.0
350
10µs
RDS(ON)
limited
10µs
100µs
10.0
1ms
10ms
DC
1.0
250
17
5
2
10
200
150
100
0.1
TJ(Max)=150°C
TC=25°C
50
0.0
0
0.01
0.1
1
-VDS (Volts)
10
100
0.0001
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
0.001
0.01
0.1
1
0
10
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
TJ(Max)=150°C
TC=25°C
300
Power (W)
-ID (Amps)
100.0
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=1.5°C/W
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 2: November 2010
www.aosmd.com
Page 4 of 6
AON6403
230.0
90
200.0
80
Power Dissipation (W)
-IAR (A) Peak Avalanche Current
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
TA=25°C
170.0
140.0
TA=150°C
TA=100°C
110.0
80.0
TA=125°C
50.0
70
60
50
40
30
20
10
0
20.0
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)
25
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note F)
100
10000
80
1000
Power (W)
-Current rating ID(A)
TA=25°C
60
40
17
5
2
10
100
10
20
1
0.0001
0
0
25
50
75
100
125
TCASE (°C)
Figure 14: Current De-rating (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.01
1
100
10000
0
18
150
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=55°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 2: November 2010
www.aosmd.com
Page 5 of 6
AON6403
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev 2: November 2010
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
www.aosmd.com
Page 6 of 6