APT60DS20HJ ISOTOP® Schottky Diode Full Bridge Power Module VRRM = 200V IF = 60A @ Tc = 80°C Application • • • Switch mode power supplies rectifier Induction heating Welding equipment Features • • • • • • + ~ ~ Ultra fast recovery times Soft recovery characteristics High current Very low stray inductance High level of integration ISOTOP® Package (SOT-227) Benefits • • • • • • - Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Symbol VR VRRM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage IF(AV) Maximum Average Forward Current IFSM Non-Repetitive Forward Surge Current Duty cycle = 50% 8.3ms Max ratings Unit 200 V TC = 25°C 90 TC = 80°C TJ = 45°C 60 A 600 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-4 APT60DS20HJ – Rev 0 November, 2009 Absolute maximum ratings APT60DS20HJ All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic VF Diode Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance Test Conditions IF = 60A IF = 120A Tj = 125°C IF = 60A Tj = 25°C VR = 200V Tj = 125°C Min Typ 0.83 0.98 0.72 Max 0.90 V 1 25 VR = 200V Unit 300 mA pF Dynamic Characteristics Symbol Characteristic trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current Test Conditions IF = 60A VR = 133V di/dt = 200A/µs IF = 60A VR = 133V di/dt=700A/µs Min Typ Tj = 25°C 55 Tj = 125°C 100 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 160 490 5 10 Tj = 125°C Max Unit ns nC A 80 ns 1100 nC 27 A Thermal and package characteristics Characteristic Junction to Case Thermal resistance Junction to Ambient Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 -55 Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight www.microsemi.com Typ Max 0.9 20 Unit °C/W V 150 300 1.5 29.2 °C N.m g 2-4 APT60DS20HJ – Rev 0 November, 2009 Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt APT60DS20HJ Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0 0.00001 Single Pulse 0.1 0.05 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage Trr vs. Current Rate of Charge 120 trr, Reverse Recovery Time (ns) IF, Forward Current (A) 120 100 80 TJ=125°C 60 40 20 TJ=25°C 0 0.0 0.2 0.4 0.6 0.8 TJ=125°C VR=133V 110 100 120 A 90 60 A 80 70 30 A 60 1.0 0 200 TJ=125°C VR=133V 120 A 60 A 1200 900 30 A 600 300 0 200 400 600 600 800 IRRM vs. Current Rate of Charge 800 IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (nC) QRR vs. Current Rate Charge 1800 1500 400 -diF/dt (A/µs) VF, Anode to Cathode Voltage (V) 35 120 A TJ=125°C VR=133V 30 60 A 25 20 30 A 15 10 5 -diF/dt (A/µs) 0 200 400 600 800 -diF/dt (A/µs) Capacitance vs. Reverse Voltage 1800 1500 1200 900 600 300 0 1 10 100 1000 VR, Reverse Voltage (V) www.microsemi.com 3-4 APT60DS20HJ – Rev 0 November, 2009 C, Capacitance (pF) 2100 APT60DS20HJ SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 0.75 (.030) 0.85 (.033) 25.2 (0.992) 25.4 (1.000) 3.30 (.130) 12.6 (.496) 4.57 (.180) 12.8 (.504) 1.95 (.077) 2.14 (.084) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) Dimensions in Millimeters and (Inches) 38.0 (1.496) 38.2 (1.504) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 4-4 APT60DS20HJ – Rev 0 November, 2009 ISOTOP® is a registered trademark of ST Microelectronics NV