APTDR90X1601G VRRM = 1600V IC = 90A @ Tc = 80°C 3 Phase rectifier bridge Power Module 1 2 Application 7 9 11 8 10 12 • • Input rectifiers for inverter Battery DC power supply Features • • • • 5 High blocking voltage High surge current Low leakage current Very low stray inductance - Symmetrical design High level of integration 6 • Benefits • • • • Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low profile RoHS compliant All multiple inputs and outputs must be shorted together 1/2 ; 5/6 ; 7/8 ; 9/10 ; 11/12 Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage DC Forward Current Non-Repetitive Forward Surge Current t=10ms TC = 80°C TJ = 45°C Max ratings Unit 1600 V 90 850 A These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-3 APTDR90X1601G – Rev 1 Symbol VR VRRM IF IFSM March, 2008 Absolute maximum ratings APTDR90X1601G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions IR Reverse Current VR = 1600V VF Forward Voltage IF = 90A VT rT On – state Voltage On – state Slope resistance Min Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Typ Max 50 4 1.3 1.1 0.8 4.8 Unit µA mA V V mΩ Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 3500 -40 -40 -40 2.5 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Typ Max 0.85 150 125 100 4.7 80 Unit °C/W V °C N.m g See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 2-3 APTDR90X1601G – Rev 1 March, 2008 SP1 Package outline (dimensions in mm) APTDR90X1601G Typical Performance Curve Forward Characteristic Non-Repetitive Forward Surge Current 1000 180 150 800 TJ=125°C IFSM (A) IF (A) 120 90 TJ=45°C 600 TJ=125°C 400 60 TJ=25°C 0 0.01 0 0.0 0.4 0.8 1.2 50Hz 80% VRRM 200 30 1.6 2.0 0.1 t (s) VF (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1 0.8 0.6 0.9 0.7 0.5 0.4 0.3 0.2 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 3-3 APTDR90X1601G – Rev 1 March, 2008 Rectangular Pulse Duration in Seconds