POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation RECTIFIER DIODE POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519 Sales Office: Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510 AR649 Repetitive voltage up to Mean forward current Surge current 2500 V 4645 A 45 kA TARGET SPECIFICATION nov 02 - ISSUE : 03 Symbol Characteristic Tj [°C] Conditions Value Unit BLOCKING V RRM Repetitive peak reverse voltage 175 2500 V V RSM Non-repetitive peak reverse voltage 175 2600 V I RRM Repetitive peak reverse current 175 100 mA V=VRRM CONDUCTING I F (AV) Mean forward current 180° sin ,50 Hz, Th=55°C, double side cooled 4645 A I F (AV) Mean forward current 180° sin ,50 Hz, Tc=85°C, double side cooled 4515 A I FSM Surge forward current Sine wave, 10 ms without reverse voltage 45 kA I² t I² t V FM Forward voltage V F(TO) r F Forward current = 175 10125 x 1E3 2000 A A²s 175 0.90 V Threshold voltage 175 0.70 V Forward slope resistance 175 0.100 mohm SWITCHING t rr Reverse recovery time Q rr Reverse recovery charge I rr Peak reverse recovery current µs 175 µC A MOUNTING R th(j-h) Thermal impedance, DC Junction to heatsink, double side cooled R th(c-h) Thermal impedance Case to heatsink, double side cooled T Operating junction temperature F j 14 °C/kW 3 °C/kW -30 / Mounting force 35.0 Mass 850 ORDERING INFORMATION : AR649 S 25 standard specification VRRM/100 175 °C / 40.0 kN g AR649 RECTIFIER DIODE TARGET SPECIFICATION POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation nov 02 - ISSUE : 03 DISSIPATION CHARACTERISTICS SQUARE WAVE Th [°C] 190 170 150 130 110 30° 90 60° 70 90° 120° 180° DC 50 0 1000 2000 3000 4000 5000 6000 7000 IF(AV) [A] PF(AV) [W] 10000 9000 8000 7000 DC 120° 180° 90° 6000 5000 30° 4000 60° 3000 2000 1000 0 0 1000 2000 3000 4000 IF(AV) [A] 5000 6000 7000 AR649 RECTIFIER DIODE POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation TARGET SPECIFICATION nov 02 - ISSUE : 03 DISSIPATION CHARACTERISTICS SINE WAVE Th [°C] 190 170 150 130 110 30° 60° 90 90° 120° 70 180° 50 0 1000 2000 3000 4000 5000 6000 IF(AV) [A] PF(AV) [W] 9000 180° 8000 7000 90° 6000 120° 60° 5000 30° 4000 3000 2000 1000 0 0 1000 2000 3000 IF(AV) [A] 4000 5000 6000 AR649 RECTIFIER DIODE POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation TARGET SPECIFICATION nov 02 - ISSUE : 03 FORWARD CHARACTERISTIC Tj = 175 °C SURGE CHARACTERISTIC Tj = 175 °C 14000 50 45 12000 40 35 8000 ITSM [kA] Forward Current [A] 10000 6000 30 25 20 15 4000 10 2000 5 0 0 0.6 1.1 1.6 2.1 1 Forward Voltage [V] 10 n° cycles TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 16.0 14.0 Zth j-h [°C/kW] 12.0 10.0 8.0 6.0 4.0 2.0 0.0 0.001 0.01 0.1 1 10 100 t[s] Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvementPOSEICO SpA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. 100