PD - 97642
AUTOMOTIVE GRADE
AUIRF7416Q
Features
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HEXFET® Power MOSFET
Advanced Process Technology
Low On-Resistance
P-Channel MOSFET
Dynamic dV/dT Rating
150°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free, RoHS Compliant
Automotive Qualified*
A
D
S
1
8
S
2
7
S
3
6
D
G
4
5
D
Top View
D
V(BR)DSS
-30V
RDS(on) max.
0.02Ω
ID
-10A
Description
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per
silicon area. This benefit combined with the fast switching
speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
SO-8
AUIRF7416Q
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The
thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature
(TA) is 25°C, unless otherwise specified.
Parameter
Max.
Continuous Drain Current, VGS @ -10V
-10
ID @ TA = 70°C
Continuous Drain Current, VGS @ -10V
-7.1
IDM
Pulsed Drain Current
-45
PD @TA = 25°C
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
ID @ TA = 25°C
VGS
c
EAS
Single Pulse Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
TJ
Operating Junction and
TSTG
Storage Temperature Range
e
d
2.5
0.02
± 20
Units
A
W
mW/°C
V
370
mJ
-5.0
V/ns
-55 to + 150
°C
Max.
Units
50
°C/W
Thermal Resistance
Parameter
RθJA
Junction-to-Ambient
g
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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1
02/28/2011
AUIRF7416Q
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Conditions
-30
––– –––
V VGS = 0V, ID = -250μA
––– -0.024 ––– V/°C Reference to 25°C, ID = -1mA
VGS = -10V, ID = -5.6A
––– ––– 0.020
Ω
VGS = -4.5V, ID = -2.8A
––– ––– 0.035
-1.0 ––– -2.04
V VDS = VGS, ID = -250μA
5.6
––– –––
S VDS = -10V, ID = -2.8A
VDS = -24V, VGS = 0V
––– ––– -1.0
μA
VDS = -24V, VGS = 0V, TJ = 125°C
––– –––
-25
VGS = -20V
––– ––– -100
nA
––– ––– 100
VGS = 20V
f
f
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
61
8.0
22
18
49
59
60
1700
890
410
92
12
32
–––
–––
–––
–––
–––
–––
–––
nC
ns
pF
ID = -5.6A
VDS = -24V
VGS = -10V, See Fig. 6 & 9
VDD = -15V
ID = -5.6A
RG = 6.2Ω
RD = 2.7Ω, See Fig. 10
VGS = 0V
VDS = -25V
ƒ = 1.0MHz, See Fig. 5
f
f
Diode Characteristics
Parameter
IS
ISM
VSD
trr
Qrr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
c
Min. Typ. Max. Units
–––
–––
-3.1
–––
–––
-45
–––
–––
–––
–––
56
99
-1.0
85
150
Conditions
MOSFET symbol
A
V
ns
nC
showing the
integral reverse
D
G
S
p-n junction diode.
TJ = 25°C, IS = -5.6A, VGS = 0V
TJ = 25°C,IF = -5.6A
di/dt = 100A/μs
e
e
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 25mH
RG = 25Ω, IAS = -5.6A. (See Figure 12)
2
ISD ≤ -5.6A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,
T J ≤ 150°C.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec.
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AUIRF7416Q
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
Charged Device
Model
RoHS Compliant
††
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
SO-8
MSL1
Class M4 (+/- 425V)
AEC-Q101-002
†††
Class H1B (+/- 1000V)
AEC-Q101-001
†††
†††
Class C5 (+/- 1125V)
AEC-Q101-005
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
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3
AUIRF7416Q
100
100
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
TOP
TOP
10
-3.0V
20μs PULSE WIDTH
TJ = 25°C
A
1
0.1
1
10
-3.0V
20μs PULSE WIDTH
TJ = 150°C
A
1
0.1
10
1
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
TJ = 25°C
TJ = 150°C
10
VDS = -10V
20μs PULSE WIDTH
3.0
3.5
4.0
4.5
5.0
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-ID , Drain-to-Source Current (A)
100
1
10
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
5.5
A
I D = -5.6A
1.5
1.0
0.5
VGS = -10V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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AUIRF7416Q
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
-VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
4000
3000
Ciss
Coss
2000
1000
Crss
0
1
10
100
I D = -5.6A
VDS = -24V
VDS = -15V
16
12
A
8
4
FOR TEST CIRCUIT
SEE FIGURE 9
0
0
VDS , Drain-to-Source Voltage (V)
40
60
80
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
-IID , Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 150°C
10
TJ = 25°C
VGS = 0V
1
0.4
0.6
0.8
1.0
-VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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A
1.2
100us
10
1ms
10ms
TA = 25 °C
TJ = 150 ° C
Single Pulse
1
0.1
1
10
A
100
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
-ISD , Reverse Drain Current (A)
20
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRF7416Q
RD
VDS
QG
-10V
QGS
V GS
D.U.T.
RG
QGD
-
+
VDD
VG
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
td(on)
50KΩ
12V
tr
t d(off)
tf
VGS
.2μF
.3μF
10%
+VDS
D.U.T.
VGS
90%
-3mA
VDS
IG
ID
Current Sampling Resistors
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
PDM
0.02
1
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
6
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AUIRF7416Q
IAS
tp
VDD
A
DRIVER
0.01Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
EAS , Single Pulse Avalanche Energy (mJ)
D.U.T
RG
-20V
1000
L
VDS
ID
-2.5A
-4.5A
BOTTOM -5.6A
TOP
800
600
400
200
0
25
50
75
100
125
150
Starting TJ , Junction Temperature (o C)
I AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
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7
AUIRF7416Q
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
**
RG
+
-
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VGS*
VDD
*
*
Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
Period
P.W.
D=
P.W.
Period
[
] ***
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[
Re-Applied
Voltage
Body Diode
VDD
]
Forward Drop
Inductor Curent
ISD
Ripple ≤ 5%
[
]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 13. For P-Channel HEXFETS
8
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AUIRF7416Q
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
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SO-8 Part Marking
F7416Q
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
AUIRF7416Q
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
10
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AUIRF7416Q
Ordering Information
Base part
number
Package Type
Standard Pack
AUIRF7416Q
SO-8
Form
Tube
Tape and Reel
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Complete Part Number
Quantity
95
2500
AUIRF7416Q
AUIRF7416QTR
11
AUIRF7416Q
IMPORTANT NOTICE
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the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products
and applications using IR components. To minimize the risks with customer products and applications, customers should
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