BAT378W SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE 3 1 2 Marking Code: B7 Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 15 V Reverse Voltage VR 10 V Maximum Peak Forward Current IFM 200 mA Surge Forward Current (10 ms) IFSM 1 A Average Forward Current IO 100 mA Power Dissipation Ptot 100 mW Junction Temperature Tj 125 O Storage Temperature Range Ts -55 to +125 O Topr -40 to +100 O Operating Temperature Range C C C Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 5 mA at IF = 100 mA Reverse Current at VR = 10 V Total Capacitance at VR = 0 V, f = 1 MHz Symbol Min. Typ. Max. Unit VF - - 0.3 0.5 V IR - - 20 µA CT - 20 40 pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 27/02/2006 BAT378W SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 27/02/2006