BFR360F NPN Silicon RF Transistor • Low noise amplifier for low current applications • Collector design supports 5V supply voltage 2 3 1 • For oscillators up to 3.5 GHz • Low noise figure 1.0 dB at 1.8 GHz • Pb-free (RoHS compliant) package • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR360F Marking FBs Pin Configuration 1=B 2=E 3=C Package TSFP-3 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Unit Collector-emitter voltage VCEO 6 Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 2 Collector current IC 35 Base current IB 4 Total power dissipation1) Ptot 210 mW Junction temperature TJ 150 °C Storage temperature T Stg V mA TS ≤ 98°C -55 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS ≤ 250 K/W 1T S is measured on the collector lead at the soldering point to the pcb calculation of RthJA please refer to Application Note AN077 Thermal Resistance 2For 1 2010-05-20 BFR360F Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. 6 9 - DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 1 mA, IB = 0 Collector-emitter cutoff current nA ICES VCE = 4 V, VBE = 0 - 1 30 VCE = 10 V, VBE = 0, TA = 85°C - 2 50 ICBO - 1 30 IEBO - 1 500 hFE 90 120 160 Verified by random sampling Collector-base cutoff current VCB = 4 V, I E = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain - IC = 15 mA, VCE = 3 V, pulse measured 2 2010-05-20 BFR360F Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT 11 14 - Ccb - 0.32 0.5 Cce - 0.2 - Ceb - 0.4 - NFmin - 1 - IC = 15 mA, VCE = 3 V, Z S = ZSopt, ZL = ZLopt, f = 1.8 GHz - 15.5 - f = 3 GHz - 11 - GHz IC = 15 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance pF VCB = 5 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 5 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum noise figure dB IC = 3 mA, VCE = 3 V, ZS = ZSopt, f = 1.8 GHz Power gain, maximum available 1) G ma |S 21e|2 Transducer gain dB IC = 15 mA, VCE = 3 V, Z S = ZL = 50Ω, f = 1.8 GHz - 13 - f = 3 GHz - 9 - IP 3 - 24 - P-1dB - 9 - Third order intercept point at output 2) dBm VCE = 3 V, I C = 15 mA, f = 1.8 GHz, ZS = ZL = 50Ω 1dB compression point at output IC = 15 mA, VCE = 3 V, Z S = ZL = 50Ω, f = 1.8 GHz 1/2 ma = |S 21e / S12e| (k-(k²-1) ) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 1G 3 2010-05-20 BFR360F Total power dissipation Ptot = ƒ(TS) Collector-base capacitance Ccb= ƒ(VCB) f = 1MHz 240 0.8 mW pF 0.6 Ccb Ptot 180 150 0.5 120 0.4 90 0.3 60 0.2 30 0.1 0 0 15 30 45 60 75 90 105 120 °C 0 0 150 2 4 6 8 10 12 TS V 16 VCB Third order Intercept Point IP3=ƒ(IC) Transition frequency fT = ƒ(IC) (Output, ZS=ZL=50Ω) f = 1GHz VCE = parameter, f = 1.8GHz VCE = parameter 30 17 GHz dBm 14 5V 20 12 fT IP3 3V 15 10 2V 8 10 6V 4V 3V 2V 1V 5 1V 6 0.7V 4 0 -5 0 2 5 10 15 20 25 30 mA 0 0 40 IC 5 10 15 20 25 30 mA 40 IC 4 2010-05-20 BFR360F Power gain Gma, Gms = ƒ(IC) Power gain Gma, Gms = ƒ(IC) f = 0.9GHz f = 1.8GHz VCE = parameter VCE = parameter 18 24 dB 5V dB 22 5V 3V 21 2V 3V G G 20 19 14 2V 18 1V 17 12 1V 16 15 0.7V 10 14 0.7V 13 12 0 5 10 15 20 25 30 mA 8 0 40 5 10 15 20 25 30 IC 40 IC Power Gain Gma, Gms = ƒ(f) Insertion Power Gain |S21|² = ƒ(f) VCE = parameter VCE = parameter 49 36 dB dB Ic = 15mA Ic = 15mA 34 24 5V 2V 1V 0.7V G 28 G 39 29 20 24 16 19 12 9 5V 2V 1V 0.7V 4 0 0.5 14 mA 8 4 1 1.5 2 2.5 3 3.5 GHz 0 0 4.5 f 0.5 1 1.5 2 2.5 3 3.5 GHz 4.5 f 5 2010-05-20 BFR360F Power Gain Gma, Gms = ƒ(VCE): Power gain Gma, Gms = ƒ (I C) |S21|² = ƒ(VCE): - - - - VCE = 3V f = parameter f = parameter 24 dB 22 dB Ic = 15mA 0.9GHz 0.9GHz 19 0.9GHz 18 17 18 G G 20 1.8GHz 16 15 16 1.8GHz 14 1.8GHz 14 13 2.4GHz 12 11 12 3GHz 10 9 10 4GHz 8 8 0 1 2 3 4 5 V 7 0 7 5 10 15 VCE 20 25 30 35 mA 45 IC Noise figure NF = ƒ (IC ) VCE = 3V, f = 1,8 GHz Noise figure F = ƒ(f) VCE = 3V, ZS = ZSopt 3 dB F50 2.4 2.2 NFmin F 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 5 10 15 20 25 30 35 mA 45 IC 6 2010-05-20 BFR360F Source impedance for min. noise figure vs. frequency VCE = 3 V +j50 +j25 +j100 +j10 2.4GHz 1.8GHz 3GHz 0 10 25 50 0.9GHz 100 4GHz 3mA 15mA -j10 -j25 -j100 -j50 7 2010-05-20 BFR360F SPICE Parameter For the SPICE model as well as for the S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. 8 2010-05-20 Package TSFP-3 BFR360F Package Outline 0.2 ±0.05 0.55 ±0.04 1 1.2 ±0.05 0.2 ±0.05 3 2 0.2 ±0.05 10˚ MAX. 0.8 ±0.05 1.2 ±0.05 0.15 ±0.05 0.4 ±0.05 0.4 ±0.05 Foot Print 1.05 0.45 0.4 0.4 0.4 Marking Layout (Example) Manufacturer BCR847BF Type code Pin 1 Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 1.2 1.5 8 0.3 Pin 1 0.7 1.35 9 2010-05-20 BFR360F Datasheet Revision History: 20 May 2010 This datasheet replaces the revision from 30 March 2007. The product itself has not been changed and the device characteristics remain unchanged. Only the product description and information available in the datasheet has been expanded and updated. Previous Revision: 30 March 2007 Page Subject (changes since last revision) 1 Datasheet has final status 1 Max. ratings refer to 25°C 1 Max. rating for TA removed 1 Lower max. rating for storage temperature TStg changed 2 Typical values for leakage currents included, maximum leakage current values reduced 6 Characteristic curve for NFmin vs. frequency included 10 2010-05-20 BFR360F Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( <www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 11 2010-05-20