INFINEON BGS12A

P re li m i n a r y D a t a S h e e t , V 1 . 1 , S e p . 2 00 7
B G S 1 2A
SPDT RF Switch
S m a l l S i g n a l D i s c r et e s
Edition 2007-09-14
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
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BGS12A
SPDT RF Switch
BGS12A
Revision History: 2007-09-14, V1.1
Previous Version: 2006-10-19, V1.0
Page
Subjects (major changes since last revision)
All
Document layout change
Preliminary Data Sheet
3
V1.1, 2007-09-14
BGS12A
SPDT RF Switch
BGS12A
BGS12A
Features
• Low insertion loss
• High port-to-port-isolation
• Low harmonic generation
• On-chip control logic
• Lead free solder bumps
• High ESD robustness
• No external components required
• General purpose switch for applications up to 3 GHz
• Pb-free (RoHS compliant) package
Description
The BGS12A General Purpose RF MOS switch is designed to cover a broad range of applications from 0.1 to
3 GHz. The symmetric design of its single pole double throw configuration, as shown in Figure 1 offers high design
flexibility. This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL
compatible control input signal. The 0.1 dB compression point exceeds the switch’s maximum input power level
of 21 dBm, resulting in linear performance at all signal levels. The RF switch has a very low insertion loss of 0.3 dB
in the 1 GHz and 0.6 dB in the 2 GHz range.
Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is applied
externally.
The BGS12A RF switch is manufactured in Infineon’s patented MOS technology, offering the performance of
GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness.
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Figure 1
Functional Diagram
Type
Package
Marking
Chip
BGS12A
FWLP-6-1
12
N0735
Preliminary Data Sheet
4
V1.1, 2007-09-14
BGS12A
SPDT RF Switch
BGS12A
Table 1
Maximum Ratings
Parameter
Symbol
Values
Min.
Storage temperature range
DC Voltage at all pins to GND
RF power max. at all RF ports
Tstg
VDC
PIN
Typ.
-65
Unit
Max.
150
°C
5
V
24
dBm
1000
100
V
Note /
Test Condition
ESD Capability
Human Body-Model IEC61340-3-1
Machine-Model IEC61340-3-2
Table 2
VESD
Operation Ranges
Parameter
Symbol
Values
Min.
Ambient temperature
RF Frequency
Control voltage low
Control voltage high
Supply voltage
1)
Current consumption Vdd Pin (over
temperature)
Current Consumption Vctrl Pin
Power Range
(VSWR ∞: 1))
(VSWR 3: 1)
(VSWR 1: 1)
TA
f
VCtrL
VCtrlH
Vdd
IVdd
ICtrl
Pin
Typ.
Unit
Max.
-30
85
°C
0.1
3
GHz
-0.3
0.3
V
1.4
2.8
V
tbd
2.8
V
80
350
µA
30
µA
Note /
Test Condition
dBm
15
18
21
1) Supply voltage must be connected before Control Voltage
Preliminary Data Sheet
5
V1.1, 2007-09-14
BGS12A
SPDT RF Switch
BGS12A
Table 3
Pin description
Pin
Name
Description
1
RF1
RF Port 1 Out
2
GND
Ground
3
RF2
RF Port 2 Out
4
CTRL
Control Pin
5
RFIN
RF Port In
6
Vdd
Supply Voltage
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Figure 2
Pinning
Table 4
Truth Table
Ctrl 1
RF 1
RF 2
0
1
0
1
0
1
Preliminary Data Sheet
6
V1.1, 2007-09-14
BGS12A
SPDT RF Switch
BGS12A
Electrical Specifications
•
•
•
•
•
Termination port impedance: Z0 = 50 Ω
Temperature range: T = 25 °C
Supply Voltage: Vdd = 2.8 V
Pin = 15 dBm
Across operating range of control voltages: VCtrH = 1.4...2.8 V
Table 5
Electrical Characteristics
Parameter
Symbol
Values
Min.
1)
Insertion Loss
Return Loss
Isolation RFin - RF1
IL
RL
ISORFin-RF1
Unit
Note / Test Condition
0.3
dB
0.6
dB
0.4
dB
0.8
dB
f = 1 GHz TX
f = 2 GHz TX
f = 1 GHz TX,
TA = 85 °C
f = 2 GHz TX,
TA = 85 °C
f = 1 GHz
f = 2 GHz
f = 1 GHz
f = 2 GHz
f = 1 GHz
f = 2 GHz
f = 1 GHz
f = 2 GHz
f = 1 GHz
f = 2 GHz
f = 1 GHz
f = 2 GHz
f = 1 GHz
f = 1 GHz
Typ.
Max.
15
dB
10
dB
30
34
dB
22
27
dB
34
dB
Isolation RFin - RF2
ISORFin-RF2
30
22
27
dB
Isolation RF1 - RF2
ISORF1-RF2
30
43
dB
28
34
dB
30
35
dB
20
35
dB
Isolation RF ports - Vdd, Vctrl
ISORF-DC
Harmonic Generation up to 12.75 GHz PHarm
On Switching Time (10-90%) RF
Off Switching Time (10-90%) RF
Current Consumption at Vdd Pin
Input 0.1 dB compression
ton
toff
Idd
P0.1dB
-75
-50
dBm
-80
-50
dBm
4
µs
4
120
21
µs
µA
dBm
f = 1 GHz
1) With external matching at antenna port
Preliminary Data Sheet
7
V1.1, 2007-09-14
BGS12A
SPDT RF Switch
BGS12A
Package Outlines
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Figure 3
Package outline
110 ± 13µm
bump height:
90 ± 14µm
Solderbump Material: SnAg (96.5/2.5)
UBM 80 ±4 µm
chip height:
250µm
BGS 12A _Solder _Bumps.vsd
Figure 4
Solder bumps
Dimensions in mm
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Preliminary Data Sheet
8
V1.1, 2007-09-14