FDT434P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • –5.5 A, –20 V. RDS(ON) = 0.050 Ω @ VGS = –4.5 V RDS(ON) = 0.070 Ω @ VGS = –2.5 V. • Low gate charge (13nC typical) • High performance trench technology for extremely low RDS(ON) . Applications • Low Dropout Regulator • High power and current handling capability in a widely used surface mount package. • DC/DC converter • Load switch • Motor driving D D D D S S D SOT-223 G G D SOT-223 * G G S (J23Z) Absolute Maximum Ratings Symbol S o TA=25 C unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage –20 V VGSS Gate-Source Voltage ±8 V ID Drain Current –6 A – Continuous (Note 1a) – Pulsed PD –30 Power Dissipation for Single Operation (Note 1a) 3 (Note 1b) 1.3 (Note 1c) TJ, Tstg W 1.1 -55 to +150 °C (Note 1a) 42 °C/W (Note 1) 12 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 434 FDT434P 13’’ 12mm 2500 units 1999 Fairchild Semiconductor Corporation FDT434P Rev. C1 (W) FDT434P January 2000 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units –28 mV/°C Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = –250 µA,Referenced to 25°C VDS = –16 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage Current, Forward Gate–Body Leakage Current, Reverse VGS = 8 V, VDS = 0 V 100 nA VGS = –8 V VDS = 0 V –100 nA IGSSR On Characteristics –20 V (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = –250 µA,Referenced to 25°C ID(on) On–State Drain Current VGS = –2.5 V, VGS = –4.5 V, ID = –6 A ID = –6 A TJ=125°C ID = –4 A VDS = –5 V gFS Forward Transconductance VDS = –10 V, ID = –6 A 6.5 S VDS = –10 V, f = 1.0 MHz V GS = 0 V, 1240 pF 270 pF 100 pF VGS = –4.5 V, VGS = –4.5 V, –0.4 –0.6 –1 2 V mV/°C 0.040 0.067 0.050 0.083 0.050 0.070 –20 Ω A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) tf Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge (Note 2) VDD = –5 V, VGS = –4.5 V, 8 16 ns 15 25 ns Turn–Off Delay Time 45 65 ns Turn–Off Fall Time 30 50 ns 13 19 nC VDS = –10 V, VGS = –4.5 V ID = –1 A, RGEN = 6 Ω ID = –6 A, 1.8 nC 3 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –2.1 A (Note 2) –0.75 –1.3 A –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 42°C/W when 2 mounted on a 1in pad of 2 oz copper b) 95°/W when mounted 2 on a .0066 in pad of 2 oz copper c) 110°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDT434P Rev. C1 (W) FDT434P Electrical Characteristics FDT434P Typical Characteristics 1.8 20 RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = - 4.5V -3. 0V - 2.5V 16 12 8 - 2. 0V 4 D -1. 5V 1.6 VGS = -2.5V 1.4 -3.0V 1.2 -3.5V -4.0V -4.5V 1 I 0 DRAI 0 1 2 3 4 - DS, DRAIN- SOURCE VOLTAGE ( V) V 0.8 5 Figure 1. On-Region Characteristics. 1.4 15 20 1.2 1 0.8 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 150 I D = -6 A TA =125°C Figure 3. On-Resistance Variation withTemperature. 25°C R R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 10 - I D, DRAIN CURRENT (A) ID = - 6 A VGS = - 4.5V 0.6 -50 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 15 VDS = -5V 12 - I S, REVERSE DRAIN CURRENT (A) 15 - I D, DRAIN CURRENT (A) 5 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 TJ = -55°C 25°C 125°C 9 6 3 0 0.9 0 1.2 1.5 1.8 2.1 2.4 -VGS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2.7 VGS = 0V TJ = 125°C 1 25°C -55°C 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD , BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDT434P Rev. C1 (W) FDT434P Typical Characteristics 5 2500 I D = -6.0A V D S= - 5V -1 0V -1 5V 4 1000 3 400 2 200 GS 0 3 GA 6 9 Q g , GATE CHARGE (nC) 12 15 100 50 0.1 Figure 7. Gate Charge Characteristics. 0.3 -V 1 3 , DRAIN TO SOURCE VOLTAGE (V) 100 20 200 SINGLE PULSE 100µs -I D, DRAIN CURRENT (A) 10 Figure 8. Capacitance Characteristics. 10 o 10ms RDS(ON) LIMIT R θJA = 110 C/W 160 o 100ms T A = 25 C 1s 10s POWER (W) V 0 CAPACITANCE( F 1 DC 1 VGS= -4.5V SINGLE PULSE RθJA= 42oC/W 0.1 120 80 40 TA= 25oC 0 0.01 0.1 1 10 0.0001 100 0.001 0.01 -VDS, DRAIN-SOURCE VOLTAGE (V) 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RθJA(t) = r(t) + RθJA RθJA = 110 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - T A = P * RθJA(t) Duty Cycle, D = t 1 / t2 Single Pulse 0.001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. FDT434P Rev. C1 (W) SOT-223 Tape and Reel Data and Package Dimensions SOT-223 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: F63TNR Label Antistatic Cover Tape SOT-223 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 2,500 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 units per 7" or 177cm diameter reel. This and some other options are further described in the Packaging Information table. These full reels are individually barcode labeled and placed inside a standard intermediate box (illustrated in figure 1.0) made of recyclable corrugated brown paper. One box contains two reels maximum. And these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped. Static Dissipative Embossed Carrier Tape F852 014 F852 014 F852 014 F852 014 SOT-223 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Standard (no flow code) TNR 2,500 D84Z SOT-223 Unit Orientation TNR 500 13" Dia 7" Dia 343x64x343 184x187x47 Max qty per Box 5,000 1,000 Weight per unit (gm) 0.1246 0.1246 Weight per Reel (kg) 0.7250 0.1532 343mm x 342mm x 64mm Intermediate box for Standard F63TNR Label Note/Comments F63TNR Label F63TNR Label sample 184mm x 184mm x 47mm Pizza Box for D84Z Option SOT-223 Tape Leader and Trailer Configuration: Figure 2.0 LOT: CBVK741B019 QTY: 3000 FSID: PN2222A SPEC: D/C1: D9842 D/C2: QTY1: QTY2: SPEC REV: CPN: N/F: F (F63TNR)3 Carrier Tape Cover Tape Components Trailer Tape 300mm minimum or 38 empty pockets Leader Tape 500mm minimum or 62 empty pockets September 1999, Rev. B SOT-223 Tape and Reel Data and Package Dimensions, continued SOT-223 Embossed Carrier Tape Configuration: Figure 3.0 P0 D0 T E1 F K0 Wc W E2 B0 Tc A0 D1 P1 User Direction of Feed Dimensions are in millimeter Pkg type SOT-223 (12mm) A0 6.83 +/-0.10 B0 7.42 +/-0.10 W 12.0 +/-0.3 D0 D1 1.55 +/-0.05 1.50 +/-0.10 E1 E2 1.75 +/-0.10 F 10.25 min P1 5.50 +/-0.05 P0 8.0 +/-0.1 4.0 +/-0.1 K0 1.88 +/-0.10 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). T Wc 0.292 +/0.0130 9.5 +/-0.025 0.06 +/-0.02 0.5mm maximum 20 deg maximum Typical component cavity center line B0 Tc 0.5mm maximum 20 deg maximum component rotation Typical component center line Sketch A (Side or Front Sectional View) A0 Component Rotation Sketch C (Top View) Component lateral movement Sketch B (Top View) SOT-223 Reel Configuration: Figure 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max See detail AA Dim N 7" Diameter Option B Min Dim C See detail AA W3 13" Diameter Option Dim D min W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size Reel Option Dim A Dim B 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 5.906 150 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 – 0.606 11.9 – 15.4 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 7.00 178 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 – 0.606 11.9 – 15.4 12mm 7" Dia 7.00 177.8 12mm 13" Dia 13.00 330 Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL) July 1999, Rev. B SOT-223 Tape and Reel Data and Package Dimensions, continued SOT-223 (FS PKG Code 47) 1:1 Scale 1:1 on letter size paper Part Weight per unit (gram): 0.1246 September 1999, Rev. C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ISOPLANAR™ MICROWIRE™ POP™ PowerTrench QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. D